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    AN-994

    Abstract: IRF530S IRL2910 IRL2910L
    Text: PD - 91376C IRL2910S/L Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = 100V RDS on = 0.026Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91376C IRL2910S/L EIA-418. AN-994 IRF530S IRL2910 IRL2910L

    Untitled

    Abstract: No abstract text available
    Text: PD - 91376C IRL2910S/L HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V RDS on = 0.026Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91376C IRL2910S/L EIA-418.

    IRF530S

    Abstract: IRL2910 IRL2910L AN-994 IRL2910S
    Text: PD - 91376C IRL2910S/L Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D l VDSS = 100V RDS on = 0.026Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91376C IRL2910S/L EIA-418. IRF530S IRL2910 IRL2910L AN-994 IRL2910S