H9ccnnn
Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Text: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz
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166MHz
H55S2G62MFP-60M
54ball)
133MHz
H55S2G62MFP-75M
H55S2G22MFP-60M
90ball)
H9ccnnn
H9CKNNNB
H5MS1G22AFRE3M
H5MS2G22MFR-J3M
H5MS2G62
H55S2622JFR-60M
H9TKNNN2GDMP-LRNDM
DDR333
H5MS2G62AFR-J3M
H5MS1G22AFR-E3M
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K4S643232E
Abstract: K4S643233E
Text: K4S643233E-SE N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.0V & 3.3V) Extended Temperature TSOP / 90Ball FBGA (V DD/V DDQ 3.0V/3.0V, 3.3V/3.3V) Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.
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K4S643233E-SE
32bit
90Ball
2Mx32
K4S643234E-S
K4S643232E-S
K4S643233E-S
K4S643232E
K4S643233E
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45VM32160D
Abstract: No abstract text available
Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42/45VM32160D
32Bits
IS42/45VM32160D
-40oC
16Mx32
IS42VM32160D-6BLI
IS42VM32160D-75BLI
90-ball
45VM32160D
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SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
SM81600E
IS42SM16800E-7TLI
IS42SM32400E-7T
IS42SM16800E-7BLI
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IS42S32400D
Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S32400D
128-MBIT
128Mb
rS32400D-7TI
86-Pin
IS42S32400D-7TLI
IS42S32400D-7BI
IS42S32400D
42S32400D
is42s32400d-6bli
IS42S32400D-7TLI
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K4S643233H
Abstract: K4S643233H-F
Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
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K4S643233H
32Bit
90FBGA
K4S643233H-F
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K4S28323LF
Abstract: K4S28323LF-F
Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4S28323LF
32Bit
90FBGA
K4S28323LF-F
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MT48LC4M32B2P
Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Text: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive
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128Mb:
MT48LC4M32B2
PC100
096-cycle
09005aef80872800/Source:
09005aef80863355
128MbSDRAMx32
MT48LC4M32B2P
MT48LC4M32B2TG-7
MT48LC4M32B2
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MT48LC2M32B2P
Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Text: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock
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MT48LC2M32B2
PC100
096-cycle
09005aef811ce1fe/Source:
09005aef811ce1d5
64MSDRAMx32
MT48LC2M32B2P
MT48LC2M32B2
MT48LC2M32B2P-7
MT48LC2M32B2TG
2M32B2
*48LC2M32
H9612
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IS61WV51232BLL-10BLI
Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater
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IS61WV51232ALL/ALS
IS61WV51232BLL/BLS
IS64WV51232BLL/BLS
IS61WV51232Axx)
IS61/64WV51232Bxx)
90-ball
IS61WV51232BLL-10BI
IS61WV51232BLL-10BLI
IS61WV51232BLL-10BLI
IS61WV51232BLL
IS64WV51232BLL
IS61WV51232
IS64WV51232BLL-10BA3
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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MT48LC8M32LFB5
Abstract: D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48H8M32LF MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g
Text: 256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • •
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256Mb:
MT48LC8M32LF,
MT48V8M32LF,
MT48H8M32LF
90-ball
09005aef80d460f2/Source:
09005aef80cd8d41
256Mb
MT48LC8M32LFB5
D9CDF
MT48H8M32LFB5-75 IT
mt48h8m32lff5-8
MT48H8M32LFB5-75
MT48V8M32LFB5-10
MT48LC8M32LFB5-8 stop
mt48h8m32lfb5 rev g
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Untitled
Abstract: No abstract text available
Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft
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FMD4A32LCxâ
4Mx32)
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SM32200K
Abstract: IS42SM32200K
Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42SM/RM/VM32200K
32Bits
IS42SM/RM/VM32200K
200K-6BLI
IS42SM32200K-75BLI
90-ball
-40oC
2Mx32
IS42RM32200K-6BLI
SM32200K
IS42SM32200K
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IS42S32400
Abstract: 42S32400
Text: IS42S32400 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION MARCH 2010 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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IS42S32400
128Mb
86-pin
90-ball-Pin
90-Ball
MO-207
IS42S32400
42S32400
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IS42VM81600E
Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM81600E
IS42VM16800E
IS42VM32400E
IS45VM81600E
IS45VM16800E
IS45VM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42VM32400E-75TL
IS42VM16800E-75BLI
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micron lpddr
Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS
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128Mb:
MT46H8M16LF
MT46H4M32LF
09005aef835b8f7c
09005aef835b8e70
micron lpddr
46h8m16
8M16
MT46H8M16LF
MT46H4M32LF
fbgapackaged
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K4M283233H
Abstract: No abstract text available
Text: K4M283233H - F H N/G/L/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M283233H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4M283233H
32Bit
90FBGA
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EM48AM3284LBA
Abstract: EM48AM3284LBA-75F EM48AM3284LBA-75FE
Text: eorex EM48AM3284LBA 512Mb 4Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V +/- 0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8
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EM48AM3284LBA
512Mb
EM48AM3284LBA
EM48AM3284LBA-75F
EM48AM3284LBA-75FE
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K4S283234F-M
Abstract: No abstract text available
Text: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)
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K4S283234F-M
4Mx32
90FBGA
32Bit
K4S283234F-M
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Untitled
Abstract: No abstract text available
Text: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007
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M52S128324A
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w989d2kb
Abstract: smd 6ac
Text: W989D6KB / W989D2KB 512Mb Mobile LPSDR 1. GENERAL DESCRIPTION The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,870,912 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential
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W989D6KB
W989D2KB
512Mb
304-words
166MHz.
A01-002
w989d2kb
smd 6ac
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A1833
Abstract: No abstract text available
Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4
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MT46H128M16LF
MT46H256M16L2
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
09005aef83a73286
A1833
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