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    9050 TRANSISTOR Search Results

    9050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    9050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20100N

    Abstract: panasonic diode 2kw mosfet BAT54 FDS6690A FZT649 ISL6449CB ISL6449CB-T TB363 TB379
    Text: ISL6449 TM Data Sheet November 2001 Dual Regulator - Standard Buck PWM and Linear Power Controller for Gateway Applications File Number 9050 Features The ISL6449 provides the power control and protection for two output voltages, such as those required in highperformance gateway processor applications. The dualoutput controller drives an N-Channel MOSFET in a


    Original     		PDF ISL6449 ISL6449 CH-1009 20100N panasonic diode 2kw mosfet BAT54 FDS6690A FZT649 ISL6449CB ISL6449CB-T TB363 TB379

    D078

    Abstract: FR 9120n E8870 Intel d101 motherboard diagram schematic 9150N intel schematics Intel Itanium
    Text: Dual-Core Intel Itanium® Processor 9000 and 9100 Series Dual-Core Intel® Itanium® Processor 1.6 GHz with 24 MB L3 Cache 9050 Dual-Core Intel® Itanium® Processor 1.6 GHz with 18 MB L3 Cache 9040 Dual-Core Intel® Itanium® Processor 1.6 GHz with 8 MB L3 Cache 9030


    Original     		PDF 9150M 9150N 9140M i7-2630QM/i7-2635QM, i7-2670QM/i72675QM, i5-2430M/i5-2435M, i5-2410M/i5-2415M. com/products/31731 ne80567kf028015 18-Aug-2011 D078 FR 9120n E8870 Intel d101 motherboard diagram schematic intel schematics Intel Itanium

    SOT-77

    Abstract: MAX9041 CM572 silver-filled epoxy
    Text: MAX9041xExx Rev. A RELIABILITY REPORT FOR MAX9041xExx PLASTIC ENCAPSULATED DEVICES January 13, 2004 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl


    Original     		PDF MAX9041xExx MAX9041 100pf 100uF SOT-77 CM572 silver-filled epoxy

    Untitled

    Abstract: No abstract text available
    Text: 25Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.


    Original     		PDF SERI751KD25 781KD25 821KD25 911KD25 102KD25 112KD25 122KD25 142KD25 162KD25

    05CN10N

    Abstract: 05cn10 IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3

    05CN10N

    Abstract: 05cn10 IPB05CN10NG
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10 IPB05CN10NG

    05CN10N

    Abstract: 05cn10
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 05CN10N PG-TO262-3 05CN10N 05cn10

    Untitled

    Abstract: No abstract text available
    Text: 25Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 25 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.


    Original     		PDF SKD25 781KD25 821KD25 911KD25 102KD25 112KD25 122KD25 142KD25 162KD25

    05CN10N

    Abstract: IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N JESD22 PG-TO220-3

    05CN10N

    Abstract: 05cn10 IPB05CN10N IPP05CN10N JESD22 PG-TO220-3
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N 05CN10N 05cn10 JESD22 PG-TO220-3

    05CN10N

    Abstract: IEC61249-2-21 IPP05CN10N JESD22 PG-TO220-3 DIODE D100 to220
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 05CN10N IEC61249-2-21 JESD22 PG-TO220-3 DIODE D100 to220

    Untitled

    Abstract: No abstract text available
    Text: 25Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 25Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.


    Original     		PDF 182KD25 ul-11

    471kd25

    Abstract: No abstract text available
    Text: 25ĭ SERIES DATA SHEET METAL OXIDE VARISTOR – 25ĭ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.


    Original     		PDF J-STD-020 Eleme5000 162KD25 182KD25 15-Feb-12 471kd25

    chip varactor agilent

    Abstract: VTO-8000 VTO-9000 VTO-9032 VTO-9050 VTO-9068 VTO-9090 VTO-9120 VTO-9130 testing of varactor diode
    Text: Hyperabrupt Varactor-Tuned Oscillators Technical Data VTO-9000 Series Features • 320 MHz to 2.3 GHz Coverage • Fast Tuning • Fast Setting Time • 10 mW Output Power • ±2.0 dB Output Flatness • Hermetic Thin-film Construction Description Agilent Technologies’s VTO-9000


    Original     		PDF VTO-9000 VTO-9000 VTO-8000 TF-801 TF-802 5964-9814E 5966-2940E chip varactor agilent VTO-9032 VTO-9050 VTO-9068 VTO-9090 VTO-9120 VTO-9130 testing of varactor diode

    transistor 9050

    Abstract: VTO-9000 testing of varactor diode VTO-8000 VTO-9032 VTO-9050 VTO-9068 VTO-9090 VTO-9120 9032 capacitor
    Text: Hyperabrupt Varactor-Tuned Oscillators Technical Data VTO-9000 Series Features • 25 MHz to 2.3 GHz Coverage • Fast Tuning • Fast Setting Time • +20 VDC Max Tuning Voltage • 10 mW Output Power • ± 2.0 dB Output Flatness • Hermetic Thin-film Construction


    Original     		PDF VTO-9000 TF-801 TF-802 transistor 9050 testing of varactor diode VTO-8000 VTO-9032 VTO-9050 VTO-9068 VTO-9090 VTO-9120 9032 capacitor

    RM35JA32

    Abstract: Square D Relay Class 8501 Type X 4 Pole CA2-KN22 PLC Ladder diagram in Soft Drink Vending Machine schneider sr2b121bd CA2KN22 ZELIO RM35JA32MW RE48A RSZE-1S48M CA2KN31
    Text: Table of Contents Section 23 Relays and Timers General Purpose Relays New! RXM, p. 23-6 RSL, p. 23-45 Zelio Plug-in Relays Square D® Plug-in Square D® Alternating Plug-in Square D® Miniature Plug-in Square D® Sockets Square D® Power 23-2 23-9 23-10


    Original     		PDF REG24 REG48 REG96 RM17JC andRM35JA RM17U RM35U RM17T RM35T RM35L RM35JA32 Square D Relay Class 8501 Type X 4 Pole CA2-KN22 PLC Ladder diagram in Soft Drink Vending Machine schneider sr2b121bd CA2KN22 ZELIO RM35JA32MW RE48A RSZE-1S48M CA2KN31

    Semicon volume 1

    Abstract: AWM 2851 VW-1 AWM 2835 cable
    Text: Industrial Cable S ERV IN G IN DU STR I AL , SP ECI ALT Y AN D COMMERCI AL AP P LI CATI O N S APRIL 2015 What’s New? Industrial Serving Industrial, Specialty and Commercial Applications GENFREE II LOW-SMOKE, ZERO-HALOGEN CABLE S This catalog contains indepth information on the


    Original     		PDF INS-0043-R0415 Semicon volume 1 AWM 2851 VW-1 AWM 2835 cable

    plx 9030

    Abstract: plx 9030 176-pin pqfp PCI9030 93cs66l marking ld25 plx 9052 93CS56L PPC401 TMS320C6202 9030-AA60BI
    Text: PCI 9030 Data Book PCI 9030 Data Book Version 1.4 May 2002 Website: http://www.plxtech.com Email: [email protected] Phone: 408 774-9060 800 759-3735 408 774-2169 Fax: 2002 PLX Technology, Inc. All rights reserved. PLX Technology, Inc. retains the right to make changes to this product at any time, without notice. Products may


    Original     		PDF 9030-ms Index-11 plx 9030 plx 9030 176-pin pqfp PCI9030 93cs66l marking ld25 plx 9052 93CS56L PPC401 TMS320C6202 9030-AA60BI

    plx 9030

    Abstract: EIA/JEDEC JESD22-A108 pci9030-aa60pi PCI 9030 uBGA 180 Failure rate plx 9052 PCI9054-AB50PI PCI9030-AA60BI PCI9054-AA50BI PCI9080-3 PCI 9030 FIT rate
    Text: Revision: Original October 2000 Website: Email: Phone: Fax: http://www.plxtech.com [email protected] 408-774-9060 800-759-3735 408-774-2169 2000 PLX Technology, Inc. All rights reserved. PLX Technology, Inc. retains the right to make changes to this product at any time, without notice.


    Original     		PDF

    TE809

    Abstract: No abstract text available
    Text: 2 SE d H/A-con p h o m sttaaos ddddssd ?th » m a p T-33-/S M/A-COM PHI, INC. AfiiCC 1742 CRENSHAW BLVD. TORRANCE. CALIFORNIA 9050 1 (213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET ABSOLUTE MAXIMUM RATINGS PH04045-400H


    OCR Scan     		PDF T-33-/S PH04045-400H I0083R3BP500X> CK06IXI04K> 100B470JP900X 0i330JP50CBO i00l7KS P500X> 22Our TE809

    9050 transistor

    Abstract: 9032 transistor transistor 9050 VTO-8000 50 ohm micro stripline Asy transistor TF-801 TF-802
    Text: What mLliM HEWLETT* PACKARD Hyperabrupt \kractor-Tüned Oscillators Tfechnical Data VTO-9000 Series Features • • • • 320 MHz to 2.3 GHz Coverage F ast Tuning F ast S ettin g Tim e +20 VDC M ax Tuning Voltage • 10 mW Output Pow er • ±2.0 dB Output F latn ess


    OCR Scan     		PDF VTO-9000 VTO-8000 TF-801 TF-802 5964-9814E 5966-2940E 9050 transistor 9032 transistor transistor 9050 50 ohm micro stripline Asy transistor TF-802

    Audio phase shift circuit Philips Semiconductor

    Abstract: HP202H ECG708 RDE capacitor HP334 220 microfarad 12v capacitor philips telemetry block diagram
    Text: ^53^20 00032b7 L> ECG708 FM DETECTOR AND LIMITER sem iconductor# PHILIPS .T - - 7 7 - 0 S - Q E C G INC 7 - 17E D DESCRIPTION A unique method of FM defection by a new tech­ nique of linear gating is featured in the Type ECG708 monolithic integratedcircuit. This linear device com­


    OCR Scan     		PDF 00032b7 ECG708 ECG708 Audio phase shift circuit Philips Semiconductor HP202H RDE capacitor HP334 220 microfarad 12v capacitor philips telemetry block diagram

    rft sk 3000

    Abstract: RFT r 4100 service-mitteilungen KF 517 GER-A RFT Service Mitteilung servicemitteilungen Mitteilung VEB RFT RFT Transistoren robotron
    Text: SERVICE-MITTEILUNGEN IRIFÜT1 1R A D I O - t e / e v i s i o n 1 45 VE B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N April-Mai I“ Seite 1-8 1981 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig Einheitliche Anwendung von Vordrucken bei der Bearbei­


    OCR Scan     		PDF K60-0r02-Kassetten rft sk 3000 RFT r 4100 service-mitteilungen KF 517 GER-A RFT Service Mitteilung servicemitteilungen Mitteilung VEB RFT RFT Transistoren robotron

    IR2422

    Abstract: LM2419T LM2416 LM2419 TA11B M3310 book national semiconductor
    Text: December 1994 LM2419 Triple 65 MHz CRT Driver General Description Features The LM2419 contains three wide bandwidth, large signal amplifiers designed for large voltage swings. The amplifiers have a gain of —15. The device is intended for use in color CRT monitors and is a low cost solution to designs conform­


    OCR Scan     		PDF LM2419 LM2419 11-lead T0-220 LM2416 20-3A 658-999S IR2422 LM2419T LM2416 TA11B M3310 book national semiconductor