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    900 V 9 AMP MOSFET Search Results

    900 V 9 AMP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    900 V 9 AMP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


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    PDF 2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293

    BD9870FPS

    Abstract: C6-K3L
    Text: TECHNICAL NOTE High Performance Switching Regulator Series 900kHz Step-down Switching Regulator with Integrated Compensation BD9870FPS ● Description The BD9870FPS single-channel step-down switching regulator incorporates a Pch MOSFET capable of PWM operation at 900kHz,


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    PDF 900kHz BD9870FPS BD9870FPS 900kHz, 900kHz C6-K3L

    Untitled

    Abstract: No abstract text available
    Text: Monolithic 1 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 1A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7551C 16-pin

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    Abstract: No abstract text available
    Text: Monolithic 2 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 2A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7562C 16-pin

    ft0054a

    Abstract: No abstract text available
    Text: SFF60N90E Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 60 AMP , 900 Volts, 0.22 Avalanche Rated N-channel HiPower MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/


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    PDF SFF60N90E FT0054A ft0054a

    AN 7323 IC

    Abstract: 4-Amp BAT54S EL7464CRE-T13 EL7564C EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin 28-pin EL7564C AN 7323 IC 4-Amp BAT54S EL7464CRE-T13 EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20

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    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin 28-pin EL7564C

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin 28-pin EL7564C

    Untitled

    Abstract: No abstract text available
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


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    PDF EL7563C 20-pin 28-pin EL7563C

    BAT54S

    Abstract: EL7464CRE-T13 EL7564C EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20 C6500 AN 7323 IC
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin 28-pin EL7564C BAT54S EL7464CRE-T13 EL7564CM EL7564CM-T13 EL7564CRE EL7564CRE-T7 SO20 C6500 AN 7323 IC

    Untitled

    Abstract: No abstract text available
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


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    PDF EL7563C 20-pin 28-pin EL7563C

    BAT54S

    Abstract: EL7563C EL7563CM EL7563CM-T13 EL7563CRE EL7563CRE-T13 EL7563CRE-T7 SO20
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


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    PDF EL7563C 20-pin 28-pin BAT54S EL7563C EL7563CM EL7563CM-T13 EL7563CRE EL7563CRE-T13 EL7563CRE-T7 SO20

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin EL7564C

    Untitled

    Abstract: No abstract text available
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Step-down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


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    PDF EL7563C 20-pin EL7563C

    Untitled

    Abstract: No abstract text available
    Text: EL7563C EL7563C Monolithic 4 Amp DC:DC Buck Converter Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • Internal patented current sense • Cycle-by-cycle current limit


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    PDF EL7563C 20-Pin EL7563Ct

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    dd128v

    Abstract: RA45H8994M1-101
    Text: < Silicon RF Power Modules > RA45H8994M1 RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the


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    PDF RA45H8994M1 896-941MHz RA45H8994M1 45-watt 941-MHz Oct2011 dd128v RA45H8994M1-101

    buck converter 110v

    Abstract: No abstract text available
    Text: FA3687V • Dimensions, mm FA3687V is a PWM type DC-to-DC converter control IC with 2ch outputs that can directly drive power MOSFETs. CMOS devices with high breakdown voltage are used in this IC and low power consumption is achieved. This IC is suitable for very


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    PDF FA3687V FA3687V TSSOP-16 500kHz) V/500mA 7to18V buck converter 110v

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    Untitled

    Abstract: No abstract text available
    Text: EL7564C EL7564C Monolithic 4 Amp DC:DC Step-Down Regulator Features General Description • Integrated synchronous MOSFETs and current mode controller • 4A continuous output current • Up to 95% efficiency • 4.5V to 5.5V input voltage • Adjustable output from 1V to 3.8V


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    PDF EL7564C 20-pin 28-pin EL7564C

    TL 650 ht

    Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
    Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching


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    PDF 4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


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    PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier

    2SK1171

    Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
    Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn


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    PDF 001SS7 25-35kg 2SK1171 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151

    APT9050CFN

    Abstract: No abstract text available
    Text: r □BSTTO^ 0000033 T7M BiAVP blE T> ADVANCE» POWER TECHNOLOGY A D V A N C ED P O W ER T e c h n o lo g y APT10050CFN 1000V 22.0A 0.50 £i APT9050CFN 900V 22.0A 0.50 ß P O W E R M O S IV N - CHANNEL ENHANCEMENT MODE HIGH;, 1 VOLTAGE POWER MOSFETS MAXIMUM RATINGS


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    PDF APT10Ã 50CFN APT9050CFN 03CK02S MIL-STD-750