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    8N60 Search Results

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    8N60 Price and Stock

    IXYS Corporation IXGA48N60A3-TRL

    IXGA48N60A3 TRL
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    DigiKey IXGA48N60A3-TRL Cut Tape 1,774 1
    • 1 $4.9
    • 10 $3.426
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    IXGA48N60A3-TRL Digi-Reel 1,774 1
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    IXGA48N60A3-TRL Reel 1,600 800
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    IXYS Corporation IXGH48N60A3

    IGBT 600V 120A 300W TO247
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    DigiKey IXGH48N60A3 Tube 1,125 1
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    Mouser Electronics IXGH48N60A3 495
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    STMicroelectronics STB18N60M2

    MOSFET N-CH 600V 13A D2PAK
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    DigiKey STB18N60M2 Reel 1,000 1,000
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    Avnet Americas STB18N60M2 Reel 1,000 16 Weeks 1,000
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    Mouser Electronics STB18N60M2 1,401
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    STMicroelectronics STB18N60M2 1,501 1
    • 1 $2.22
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    Avnet Silica STB18N60M2 4,000 17 Weeks 1,000
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    EBV Elektronik STB18N60M2 2,000 17 Weeks 1,000
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    Win Source Electronics STB18N60M2 5,970
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    Vishay Siliconix SIHP38N60E-GE3

    MOSFET N-CH 600V 43A TO220AB
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    DigiKey SIHP38N60E-GE3 Tube 915 1
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    STMicroelectronics STP28N60M2

    MOSFET N-CH 600V 24A TO220
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    DigiKey STP28N60M2 Tube 837 1
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    Newark STP28N60M2 Bulk 20 1
    • 1 $2.16
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    STMicroelectronics STP28N60M2 972 1
    • 1 $2.67
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    ComSIT USA STP28N60M2 465
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    Avnet Silica STP28N60M2 17 Weeks 50
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    EBV Elektronik STP28N60M2 17 Weeks 50
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    Find more 8N60 price and stock on Findchips.com

    8N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    8N60 Unisonic Technologies 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF

    8N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8N60

    Abstract: 600v 75a mosfet transistor 8n60 8N60 equivalent MOSFET transistor 75A 600V MOSFET
    Text: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor 8N60 •FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V Min ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified


    Original     		PDF

    8N60GX

    Abstract: 8n60a 8N60L 8N60 8n60b 8n60g 8N60-B UTC8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-115 8N60GX 8n60a 8N60L 8N60 8n60b 8n60g 8N60-B UTC8N60

    115 e

    Abstract: UTC8N60 8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-115 115 e UTC8N60 8N60

    8N60L-A TO-220

    Abstract: 8N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-115 8N60L-A TO-220 8N60

    SVDF8N60F

    Abstract: 8N60
    Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF O-220 01-Apr-2011 O-220 O-220F O-220F 47MAX 75MAX SVDF8N60F 8N60

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 8N60K-MT 8N60K-MT QW-R502-035

    8N60

    Abstract: UTC8N60 8n60a 8N60-B 8n60b
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 8N60L QW-R502-115 8N60 UTC8N60 8n60a 8N60-B 8n60b

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60-E Preliminary Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 8N60-E 8N60-E QW-R502-A86

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 8N60L QW-R502-115

    8n60

    Abstract: 8n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-115 8n60 8n60l

    8N60

    Abstract: 8N60GX 8n60l 8N60G 8N60L-A TO-220 8N60 equivalent 8N60-B mosfet 4b 8n60b TO-220F
    Text: UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF QW-R502-115 8N60 8N60GX 8n60l 8N60G 8N60L-A TO-220 8N60 equivalent 8N60-B mosfet 4b 8n60b TO-220F

    FR107 SMD

    Abstract: ntc 5d-9 pc817 smd 8N60 1N4148 SMD smd transistor B20100 transistor 5d smd pc817c APPLICATION CIRCUITS 5d9 smd AP3101
    Text: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-A Seriers Number: V1.3-038 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL


    Original     		PDF AP3101 DB-AP3101-A 5V-265V FR107 SMD ntc 5d-9 pc817 smd 8N60 1N4148 SMD smd transistor B20100 transistor 5d smd pc817c APPLICATION CIRCUITS 5d9 smd

    8N60C

    Abstract: 8N60CT FQPF8N60CT FAN7602 FQPF8N60CYDTU FQPF8N60C AN-6014 FQPF Series
    Text: 8N60C/8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N60C/FQPF8N60C FQPF8N60C AN-6014: AN-6014 FAN7602 FQPF8N60CT FQPF8N60CYDTU 8N60C 8N60CT FAN7602 FQPF Series

    8n60

    Abstract: No abstract text available
    Text: E 8N60 VDSS=600V; ID=8.0A; RDS ON =1.0Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage


    Original     		PDF 100nA 8n60

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    8N60

    Abstract: 8N60 equivalent e-bike MARKING A3 C409FP-A Device Marking A3
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 8N60FP Spec. No. : C409FP-A Issued Date : 2009.04.29 Revised Date : Page No. : 1/8 BVDSS : 650V @Tj=150℃ RDS ON : 1.2Ω ID : 7.5A Description The 8N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


    Original     		PDF MTN8N60FP C409FP-A MTN8N60FP O-220FP UL94V-0 8N60 8N60 equivalent e-bike MARKING A3 C409FP-A Device Marking A3

    uc3842 48v charger

    Abstract: power led uc3842 48V SMPS BATTERY CHARGER bt1 marking uc3842 constant current 1N54
    Text: UNISONIC TECHNOLOGIES CO., LTD UM608 Preliminary LINEAR INTEGRATED CIRCUIT CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS „ DESCRIPTION The UTC UM608 is a highly integrated solution for a constant voltage/constant current mode SMPS application.


    Original     		PDF UM608 UM608 QW-R105-043 uc3842 48v charger power led uc3842 48V SMPS BATTERY CHARGER bt1 marking uc3842 constant current 1N54

    8N60M

    Abstract: 8N60 TM8N60 8N55 H8N60
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TH 8N 55 M T H 8N 60 M TM 8N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S These TM O S Power FETs are designed fo r h ig h voltag e , high speed p o w e r sw itch in g a pp licatio n s such as sw itch in g regulators,


    OCR Scan     		PDF C-83Q O-218AC 8N60M 8N60 TM8N60 8N55 H8N60

    MTH8N55

    Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
    Text: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high


    OCR Scan     		PDF MTH8N55 MTH8N60 MTM8N60 Y145M. O-218AC DIODE MOTOROLA B33 3fc relay 000073S AN569 U055 TO 521 MH

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TW 8N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW 8N60E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 8.0 AMPERES 600 VOLTS


    OCR Scan     		PDF 8N60E/D 8N60E 340K-01

    ssm8n55

    Abstract: SSM8N60
    Text: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage


    OCR Scan     		PDF SSM8N55/8N60 SSM8N55 SSM8N60 00GS435 SSM8N60

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan     		PDF O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E