85025F Search Results

85025F Result Highlights (4)

Part	ECAD Model	Manufacturer	Description	Download	Buy
498-5025-F62		Amphenol Communications Solutions	VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 6.25mm (0.246in), Header.
498-5025-F63		Amphenol Communications Solutions	VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 4.25mm (0.167in), Header.
498-5025-F64		Amphenol Communications Solutions	VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 5.15mm (0.202in), Header.
498-5025-F61		Amphenol Communications Solutions	VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row VHDM, 25 positions, right, F-Key, 4.75mm (0.187in), Header.

85025F Price and Stock

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MACOM CMPA5585025F-AMP EVAL BOARD FOR CMPA601C025F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA5585025F-AMP	Box			2	1 - 10 $1276.44 100 $1276.44 1000 $1276.44 10000 $1276.44	Buy Now
Eaton Corporation 285025F-121-S Circuit Breakers 28X Hi-Amp Circuit Breaker
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	285025F-121-S					1 - 10 - 100 $23.41 1000 $21.9 10000 $21.9	Get Quote
RS	285025F-121-S	Bulk		19 Weeks	60	1 - 10 - 100 $22.8 1000 $22.8 10000 $22.8	Get Quote
Eaton Corporation 285025F-121-1 Circuit Breakers 28X HI-AMP CIRCUIT BREAKER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	285025F-121-1					1 - 10 - 100 $23.41 1000 $21.9 10000 $21.9	Get Quote
RS	285025F-121-1	Bulk		19 Weeks	60	1 - 10 - 100 $22.8 1000 $22.8 10000 $22.8	Get Quote
Eaton Corporation 185025F-01-S Circuit Breakers HI-AMP BREAKER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	185025F-01-S					1 - 10 - 100 $32.91 1000 $31.79 10000 $31.79	Get Quote
RS	185025F-01-S	Bulk		19 Weeks	60	1 - 10 - 100 $33.65 1000 $33.65 10000 $33.65	Get Quote
Eaton Corporation 185025F-01-1 Circuit Breakers HI-AMP BREAKER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	185025F-01-1					1 - 10 - 100 $33.61 1000 $32.3 10000 $32.3	Get Quote
RS	185025F-01-1	Bulk		19 Weeks	60	1 - 10 - 100 $33.65 1000 $33.65 10000 $33.65	Get Quote

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85025F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
CMPA5585025F Abstract: power transistor gaas x-band CMPA5585025F-TB Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
RF3-50 Abstract: POWER456 Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F RF3-50 POWER456
Untitled Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F
x-Band Hemt Amplifier Abstract: No abstract text available Text: 85025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s 85025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium	Original	PDF	CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier