RAYTHEON
Abstract: RMPA39000
Text: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier Description Features The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs
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RMPA39000
RMPA39000
RAYTHEON
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RAYTHEON
Abstract: RMBA09500-58
Text: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
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RMBA09500-58
RMBA09500
RAYTHEON
RMBA09500-58
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RAYTHEON
Abstract: RMDA25000
Text: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
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RMDA25000
RMDA25000
RAYTHEON
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170H3027
Abstract: HILTI M16 bolt 6vf11 battery hawker 6vf11 UN2794 KS-23997 anchor bolts 847135688 FAT100 J85504D-1 KS-24194
Text: Supplemental Battery Stand J85504D-1 Lists 16, 17, and 18 Product Manual Select Code 157-003-101 Comcode 108745712 Issue 5 January 2008 Product Manual Select Code 157-003-101 Comcode 108745712 Issue 5 January 2008 Supplemental Battery Stand J85504D-1 Lists 16, 17, and 18
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J85504D-1
T-83280-30.
170H3027
HILTI M16 bolt
6vf11 battery hawker
6vf11
UN2794
KS-23997
anchor bolts 847135688
FAT100
KS-24194
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Untitled
Abstract: No abstract text available
Text: Fiber Optic S o l u t i o n s t o 10 0 G b p s n 40G / 100G Long-Haul and Metro Networks Optical Ethernet Solutions n n 100G 32G Fiber Channel, Infiniband-EDR n 100G Active Optical & Copper Cables n Network & Storage Systems n Timing and Frequency Generation
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Abstract: No abstract text available
Text: Instrumentation Solutions Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Signal Generators to 70 GHz! ATE t Test & Measurement t R&D Laboratories t Field Testing t Service Installation t Signal Generator Solutions Hittite is committed to providing easy to implement test equipment
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IST-0513
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Untitled
Abstract: No abstract text available
Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK New Article Feature by Hittite Microwave Corporation High Performance SiGe PLLs Pair with Low
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MMIC SWITCH
Abstract: RTPA5250-130
Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information
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RTPA5250-130
RTPA5250-130
MMIC SWITCH
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RAYTHEON
Abstract: Raytheon Company 7073 8251 RMPA29100
Text: RMPA29100 27-30 GHz Power Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMPA29100 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA29100 is a 3-stage GaAs
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RMPA29100
RMPA29100
RAYTHEON
Raytheon Company
7073
8251
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RAYTHEON
Abstract: RMPA39200
Text: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC Description Features The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs
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RMPA39200
RMPA39200
1600theon
RAYTHEON
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HMC676LC3C
Abstract: No abstract text available
Text: ANALOG & MIXED -SIGNAL ICS, MODULES, SUBSYSTEMS & INSTRUMENTATION, DC - 110 GHZ AUTOMOTIVE Telematics & Sensors BROADBAND Cable Modem, CATV, DBS & VoIP Fixed Wireless, WiMAX & WiBro UWB & WirelessLAN CELLULAR INFRASTRUCTURE GSM, GPRS, CDMA, TD-SCDMA, WCDMA, UMTS & 4G / LTE
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OC-48
Modul1-8-8301-8450
HMC676LC3C
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Untitled
Abstract: No abstract text available
Text: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,
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OC-48
SG-1213
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358 ez 802
Abstract: SDI Microwave Elcom Technologies HMC700LP4E Wideband Synthesizer hmc700lp4 register electronica HMC508LP5E HMC509LP5E HMC510LP5E
Text: New Article Feature by Hittite Microwave Corporation High Performance SiGe PLLs Pair with Low Phase Noise GaAs VCOs for Microwave Radio Hittite Microwave Corporation March 2009 ? FEATURED ARTICLE INTEGRATION, PERFORMANCE & FUNCTIONALITY Integration, performance and functionality, are three of the most common
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bfi optilas
Abstract: RAYTHEON OC768 RMLA00400
Text: RMLA00400 40 Gb/s Transimpedance Amplifier ADVANCED INFORMATION Description Features The Raytheon RMLA00400 is a very high speed Transimpedance Amplifier TIA MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon’s advanced MHEMT process. The
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RMLA00400
RMLA00400
OC768)
450mW.
bfi optilas
RAYTHEON
OC768
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RAYTHEON
Abstract: RMDA1840
Text: RMDA1840 18-40 GHz Broad Band Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
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RMDA1840
RMDA1840
RAYTHEON
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je 3055
Abstract: RAYTHEON RMWM38001 RMWP38001
Text: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
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RMWM38001
RMWM38001
je 3055
RAYTHEON
RMWP38001
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RAYTHEON
Abstract: Raytheon RF Components noise amplifier RMWL38001
Text: RMWL38001 37-40 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
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RMWL38001
RMWL38001
RAYTHEON
Raytheon RF Components noise amplifier
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RAYTHEON
Abstract: RMWB33001
Text: RMWB33001 33 GHz Buffer Amplifier MMIC PRODUCT INFORMATION Description Features The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in the LO chain of point to point radios, point to multi- point communications, LMDS, and other millimeter wave applications. In
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RMWB33001
RMWB33001
RAYTHEON
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an 7073
Abstract: RAYTHEON Raytheon Company RMWW12001
Text: RMWW12001 12-24 GHz Doubler MMIC PRODUCT INFORMATION Description Features The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon
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RMWW12001
RMWW12001
an 7073
RAYTHEON
Raytheon Company
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murata 2.4 GHz filter
Abstract: pin configuration of 8251 RMPA2451B-58
Text: RMPA2451B-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or
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RMPA2451B-58
RMPA2451B-58
murata 2.4 GHz filter
pin configuration of 8251
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Untitled
Abstract: No abstract text available
Text: Preliminary WB1333X ill# ICW 0RKS Dual Serial Input PLL with 510MHz Prescalers Features Figure 1 IC W O R KS BiCMOS process Pin Diagram Operating voltage 2.7V to 5.5V v cc2 Operating frequency to 510MHz with inputs of -1 5 d B m and V cc of 3.0V Lock detect feature
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WB1333X
510MHz
25MHz
20-pin
B1333
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Untitled
Abstract: No abstract text available
Text: i i l ì ic WORKS Preliminary ,BiJF W40S01 -04 100 MHz SDRAM Buffer Features Key Specifications • Eighteen skew controlled CMOS clock outputs SDRAM0:17 Supply Voltages: VDD = 3.3V±5% Operating Temperature: • Supports four SDRAM DIMMs 0°C to +70°C
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W40S01
lntefe440BXchip
133MHz
133MHz
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Untitled
Abstract: No abstract text available
Text: Preliminary WB1331X ill# ICW 0RKS Dual Serial Input PLL with 2.0GHz and 510MHz Prescalers Features Figure 1 IC W O R KS BiCMOS process Pin Diagram Operating voltage 2.7V to 5.5V v cc2 Operating frequency to 2.0G Hz and 510MHz with inputs of -1 5 d B m and V c c of 3.0V
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WB1331X
510MHz
25MHz
20-pin
WB1331
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Untitled
Abstract: No abstract text available
Text: Data sheet 0016-4 ;' ' _*%sa-'V•> " g & H a n ^ r iv ^ M o to r C o n n e c to rs Ü . l^ ^ ^ in a T fr ^ S ^ fo r m otors? ;{^£ w £ N r ss , % plLersions in mm 09 30 010 0901 Technical Characteristics Materials Surface Locking device Hood sealing Temperature range
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