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    820FI Price and Stock

    Legrand North America LLC L820-FI

    Fl In 3W20A480V T/L |Legrand Pass & Seymour L820-FI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark L820-FI Bulk 1
    • 1 $36.36
    • 10 $36.36
    • 100 $29.93
    • 1000 $28.92
    • 10000 $28.92
    Buy Now

    Legrand North America LLC L1820-FI

    Fl In 4W20A120/208 T/L |Legrand Pass & Seymour L1820-FI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark L1820-FI Bulk 1
    • 1 $52.81
    • 10 $52.81
    • 100 $43.48
    • 1000 $42
    • 10000 $42
    Buy Now

    Arrow Hart AHCL820FI

    CCL Flanged Inlet 20A 480V 2P3W, RD&BK | Arrow Hart AHCL820FI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AHCL820FI Bulk 6 Weeks 1
    • 1 $50.5
    • 10 $50.5
    • 100 $50.5
    • 1000 $50.5
    • 10000 $50.5
    Get Quote

    Arrow Hart AHCL1820FI

    CCL F/I 20A 120/208V 3PH 3P4W, BL&BK | Arrow Hart AHCL1820FI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AHCL1820FI Bulk 6 Weeks 1
    • 1 $49.3
    • 10 $49.3
    • 100 $49.3
    • 1000 $49.3
    • 10000 $49.3
    Get Quote

    820FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf 44 n

    Abstract: irf 44 ns IRF820 IRF 1040 IRF822FI IRF820FI IRF822 irf 460 IRF 820 IRF822/FI
    Text: IRF820/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF820 820FI TYPE 500 V 500 V < 3Ω < 3Ω 3A 2.2 A IRF822 IRF822FI 500 V 500 V < 4Ω < 4Ω 2.8 A 1.9 A • ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF IRF820/FI IRF822/FI IRF820 IRF820FI IRF822 IRF822FI 100oC O-220 ISOWATT220 820FI irf 44 n irf 44 ns IRF820 IRF 1040 IRF822FI IRF820FI IRF822 irf 460 IRF 820 IRF822/FI

    13009

    Abstract: 1116 vk 13003 application notes 1130-s v239s
    Text: MIL-M-38510/10C 3 March 1986 SUPERSEDITJ5 MIL-M-38510/10B 2 January 1976 I Q u a lif ic a t i on requirements are I I removed f o r device types 0 2 , 031 land 09 see 1.1 _ ! MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, TTL, DECODERS,


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    PDF MIL-M-38510/10C MIL-M-38510/10B 13009 1116 vk 13003 application notes 1130-s v239s

    RT-8200

    Abstract: AD844 EL2020 HA5004 LM6181 LM6181IN LT1223 OP160 1132b1 LM6181 out pin
    Text: LM6181 N a t i o n a l S e m i c o n d u c t o r t * LM6181 100 mA, 100 MHz Current Feedback Amplifier General Description Features The LM6181 current-feedback amplifier offers an unparal­ leled combination of bandwidth, slew-rate, and output cur­ rent. The amplifier can directly drive up to 100 pF capacitive


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    PDF LM6181 TL/H/11328â lm6181amn LM6181AIN LM6181IN LM6181AIM-8 LM6181IM-8 RT-8200 AD844 EL2020 HA5004 LM6181IN LT1223 OP160 1132b1 LM6181 out pin

    BU271

    Abstract: TA9770
    Text: BUZ71 intefeil Ju n e 1999 D ata S h e e t F ile N u m b e r 2 4 1 8 .2 Features 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET • 14A, 5 0V This is an N -Channel enhancem ent mode silicon gate power • rDS ON = 0.100S2 field effect transistor designed for applications such as


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    PDF BUZ71 100S2 TA9770. BU271 TA9770

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Text: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


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    PDF IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI 820/FI-821/FI 822/FI-823/FI N 821 Diode transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821

    lm61821

    Abstract: No abstract text available
    Text: National LM6182 ß Semiconductor LM6182 Dual 100 mA Output, 100 MHz Current Feedback Amplifier General Description The LM6182 dual current feedback amplifier offers an un­ paralleled combination of bandwidth, slew-rate, and output current. Each amplifier can directly drive a 2V signal into a


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    PDF LM6182 LM6182 lm61821

    ITE 85111 TE

    Abstract: ba3423s
    Text: BA3423S BA3423S System Preamp for W Radio/Cassette Record/Play >i'l-B '+ iiH /D im e n s io n s Unit : mm BA3423S(Jv W 7 y W f f l i : I H S g L * x A 7 °U r> 7 "T T „ #8Ax 7 - f > m t ) ,B > * • ii^ t ii* W O N / O F F x (IIS ) /-V J U / +N5OU S A £ 4 '}< 7 )iffiH 1'C


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    PDF BA3423S BA3423S ITE 85111 TE

    hs 8206

    Abstract: 8205 8205M LA8205 LA8205M LA8206M MFP24 8205-M TA2030 8205M2
    Text: = 'M m m w -= L -x II i f ' i h A A Â A 1 1 . iy J v -y L A 8 2 0 5 , 8 2 0 5 M , 8 2 0 6 M - 7 U - 7' J I 8 IE lî& y h d d æ j - k 2598 ¡N O . 6307 / , / X v -*k > ,# i / . / ] 'S - > -Í > f - i ^ * • 5 8 3 * -?'-f 7, ? • '} - ««»g h '/ 9 4 I' 7


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    PDF LA8205 8205M, 8206M- 00V/V 8205Mt8206M 8205M2Ã LA8205 hs 8206 8205 8205M LA8205M LA8206M MFP24 8205-M TA2030 8205M2

    irc820

    Abstract: irf transistors IRF 820 i821
    Text: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500


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    PDF IRF820/FI-821/FI IRF822/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI O-220 ISOWATT220 irc820 irf transistors IRF 820 i821

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES High-Speed, Current Feedback Operational Amplifier OP-160 FEATU R ES • • • • • • • Easy To Use - Drives Large C apacitive Loads Very High Slew Rate Av = + 1 .1300 V/|xs Typ Bandwidth (Av = + 1 ) . 90MHz Typ


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    PDF OP-160 90MHz P-160 000V/ns. OP-160 90MHz! 50MH2/300P 65E-3 75E-3

    Untitled

    Abstract: No abstract text available
    Text: 68 5CA n * ed M u d o rs to r Surface Mounting B B T TYPE 5CA Frequency Range: 10-500kHz Inductance Range: 0.1 -7mH Features Recommended patterns: • Package design is ideal for automatic assembly 1.2 • Available with up to 7 terminals to provide secondary winding


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    PDF 10-500kHz 85nce 395GN-0078IB 395GN-0079IB 395GN-0080IB 395GN-0081 395GN-0082IB 100jiHÂ 120nHÂ 150jxHÂ

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
    Text: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi


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    PDF 820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor irf transistors

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
    Text: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI


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    PDF 820/FI-821/FI 822/FI-823/FI IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI D 823 transistor transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f

    IRF822FI

    Abstract: IRF820FI IRF822 irf 460 IRF 820 ATI 216 irf822f IRF820 GC522 0G145
    Text: 7^ 2^ 5 3 7 0 G M 5 7 0 0 0^2 • SGTH _ SGS-THOMSON 820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 820FI 500 V 500 V <3ß < 3 fì 3 A 2.2 A IRF822 IRF822FI 500 V 500 V <4Ü <4 n 2.8 A


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    PDF 00M5700 IRF820FI IRF822/FI IRF820 IRF820FI IRF822 IRF822FI 820FI 822FI 820/FI irf 460 IRF 820 ATI 216 irf822f GC522 0G145

    pcwc

    Abstract: No abstract text available
    Text: EL2130C EL2130C :pcwcurrs HIGHPERFORMANCEANAtflS W 8£ MHz Current Feedback A mplifier F eatu res G eneral D escrip tion • —3 dB b an d w id th = 85 M H z, Av = 1 • —3 dB b an d w id th = 75 M H z, Av = 2 • N T S C /P A L dG ^ 0.03%, d P ^ T he EL2130 is a w ideband cu rren t m ode feedback am plifier op­


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    PDF EL2130C EL2130 100ft pcwc

    Untitled

    Abstract: No abstract text available
    Text: OP-160 PMÎ HIGH-SPEED, CURRENT FEEDBACK OPERATIONAL AMPLIFIER P r e c is io n M o n o li t h ic s In c . topology for very high slew rate and wide bandwidth perform­ ance. FEATURES • • • • • • • Easy To Use - Drives Large Capacitive Loads


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    PDF OP-160 90MHzTyp OP-160 300V/p 000V/ns. P-160â

    IN 2155

    Abstract: AACE XTAL 14.7456MHZ R SCN26562 H1061 TRANSISTOR S2A SCN26562C4I40 SCN26562C4N40 SCN26562C4N48
    Text: I SCN26562 S ig n e tic s Dual Universal Serial Communications Controller DUSCC Microprocessor Products Objective Specification DESCRIPTION The Signetics SCN26562 Dual Universal S e ria l C o m m u n ic a tio n s C o n tro lle r (DUSCC) is a single-chip MOS-LSI com­


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    PDF SCN26562 SCN26562 WF22S90S IN 2155 AACE XTAL 14.7456MHZ R H1061 TRANSISTOR S2A SCN26562C4I40 SCN26562C4N40 SCN26562C4N48

    BV-1 501

    Abstract: IRF 540 GAIN 16.5 operational amplifier discrete schematic el2020cn EL2020 EL2020C EL2020CM QCX0002 CI 74LS138
    Text: EL2020C ß liiU tB C EL2020C SO MHz Cuvirent Fficdbuck Amplifier - ,biwwmmmc«’Esinscir:. ;? Features • • • • • • • • • Slew rate 500 V / jj,s ± 33 mA output current Drives ± 2.4V into 75fl Differential phase <0.1° Differential gain <0.1%


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    PDF EL2020C EL2020CN MDP0031 EL2020CM 20-Lea16 3121S57 BV-1 501 IRF 540 GAIN 16.5 operational amplifier discrete schematic EL2020 EL2020C EL2020CM QCX0002 CI 74LS138

    DP8462

    Abstract: DP8462V DP8464 DP8462N
    Text: CTl National J u â Semiconductor DP8462 2,7 Code Data Synchronizer General Description The DP8462 Data Synchronizer is designed for application in disk drive memory systems employing Run Length Limit­ ed Codes using 1-0-0 or 1-0-0-0 preamble patterns, and de­


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    PDF DP8462 DP8464 DP8462 TL/F/8418-23 DP8462V DP8462N

    1N6907

    Abstract: 1N690
    Text: G S-THOMSON O T H O M SO N -C SF DIVISION SEMICONDUCTEURS .J v ” ;’l ' A S^C D I 7^237 02617 zT-lhZS . •' _% r. * GODEbl? 3 W W / U N ID IR E C T IO N A L T R A N S IE N T V O LT A G E S U P P R E S S O R D IO D E D E PR O T ECT IO N U N ID IR E C T IO N N E LLE


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    PDF kW/8-20 1N6907 1N690