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    8115, TRANSISTOR Search Results

    8115, TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    8115, TRANSISTOR Price and Stock

    Microchip Technology Inc 2N1613A

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N1613A
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    Microchip Technology Inc 2N3442

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N3442
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    Microchip Technology Inc JANS2N2920U

    Bipolar Transistors - BJT NPN Dual Transistors
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    Onlinecomponents.com JANS2N2920U
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    Microchip Technology Inc 2N3584

    Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Tray
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    Onlinecomponents.com 2N3584
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    Microchip Technology Inc JANTX2N5153

    Bipolar (BJT) Transistor PNP 80V 2A 1W Through Hole TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTX2N5153
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    • 100 $10.77
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    8115, TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CC8115

    Abstract: 8115, transistor npn transistor TO92 30v 800ma
    Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CC8115 9AC TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage SYMBOL


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    PDF QSC/L-000019 CC8115 C-120 CC8115Rev 280103E CC8115 8115, transistor npn transistor TO92 30v 800ma

    p2111-1

    Abstract: 224C1
    Text: RF9906               • CDMA/FM Cellular Systems • General Purpose Down Converter • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/CDMA • Portable Battery Powered Equipment


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    PDF RF9906 p2111-1 224C1

    RF9906

    Abstract: No abstract text available
    Text: RF9906 8 CDMA/FM LOW NOISE AMPLIFIER/MIXER Typical Applications • CDMA/FM Cellular Systems • General Purpose Downconverter • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/CDMA • Portable Battery Powered Equipment


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    PDF RF9906 SSOP-24 RF9906

    e2v ccd60

    Abstract: CCD60 CCD60 Back Illuminated
    Text: CCD60 Back Illuminated Electron Multiplying CCD Sensor INTRODUCTION GENERAL DATA 2 The CCD60 is part of the new L3Vision range of products from e2v technologies. This device uses a novel output amplifier circuit that is capable of operating at an equivalent


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    PDF CCD60 CCD60BI, e2v ccd60 CCD60 Back Illuminated

    Untitled

    Abstract: No abstract text available
    Text: RF2469 Preliminary 8 W-CDMA AND PCS LOW NOISE AMPLIFIER/MIXER DOWNCONVERTER Typical Applications • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter Product Description


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    PDF RF2469 2330MHZ 019dBm, -10dBm)

    Untitled

    Abstract: No abstract text available
    Text: RF2469 Preliminary  :&'0$ $1' 3&6 /2: 12,6 $03/, ,(50,;(5 '2:1&219(57(5 7\SLFDO $SSOLFDWLRQV • W-CDMA Handsets • Commercial and Consumer Systems • PCS Handsets • Portable Battery-Powered Equipment • General Purpose Downconverter 3URGXFW 'HVFULSWLRQ


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    PDF RF2469 RF2469 2330MHZ 019dBm, -10dBm)

    Sharp Semiconductor Lasers

    Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
    Text: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical


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    PDF MIL-STD-883 SMA04033 Sharp Semiconductor Lasers AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics

    v5807

    Abstract: ICAN-6086 HA7211 h7210 mx-38 ndk HA7210 HA7210IB HA7211IB AN9334 LM 8105
    Text: HA7210, HA7211 S E M I C O N D U C T O R 10kHz to 10MHz, Low Power Crystal Oscillator November 1996 Features Description • Single Supply Operation at 32kHz . . . . . . . . . . 2V to 7V The HA7210 and HA7211 are very low power crystal-controlled oscillators that can be externally programmed to operate


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    PDF HA7210, HA7211 10kHz 10MHz, 32kHz HA7210 HA7211 10MHz. v5807 ICAN-6086 h7210 mx-38 ndk HA7210IB HA7211IB AN9334 LM 8105

    IEC 68-2-63

    Abstract: transistors Si 6822 MIL-STD-781 transistors 6822 si MIL-STD-785 MIL-STD-721 The Japanese Transistor Manual 1981 IEC 68-2-28 AND 7411 NATIONAL SEMICONDUCTOR MARKING BM
    Text: STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES VIII. STANDARDS AND QUALITY CERTIFICATION FOR QUALITY SYSTEMS, SAFETY, ANDRELIABILITY OF SEMICONDUCTOR DEVICES 1. QUALITY SYSTEM STANDARDS 1.1 INTRODUCTION TO THE ISO 9000 SERIES


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    8115, transistor

    Abstract: Diode 8115 XR-8101
    Text: XR-8115 C 'E X A R .the analog plus company TM ^ H ia hCHIPSETS IQ " Battery Management . System AFE m Decem ber 1996-1 FEATURES APPLICATIONS • 10-Bit Analog-to-Digital Converter • Battery Management Systems • Reversible Coulomb Counter • Fuel Gauges


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    PDF XR-8115 10-Bit 3M22blA 00Q77 8115, transistor Diode 8115 XR-8101

    BA1A4P

    Abstract: T108 02-WM RSL AH transistorBA1A4P
    Text: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^


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    PDF CycleS50 BA1A4P T108 02-WM RSL AH transistorBA1A4P

    Untitled

    Abstract: No abstract text available
    Text: 3 CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Pinout Features • I t PIN CERAMIC DIP CASE OUTLINE D6, CONFIGURATION 3 TOP VIEW Radiation Hardened to 100KRAD Si • Cosmic Ray Upsst Immunity 2 x 10* Errors/BK Day (TYP)


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    PDF CMM5114A 100KRAD

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU CMOS UV ERASABLE 524288-B IT READ ONLY MEMORY M BM 27C512-20-W MBM27C512-25-W A ugust 1988 E d itio n 1.0 CMOS 524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 bit static CMOS erasable


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    PDF 524288-B 27C512-20-W MBM27C512-25-W 27C512 28-pin 32-Pad 27C512. 32PLCS)

    Untitled

    Abstract: No abstract text available
    Text: IH5108 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI548 and similar devices, but adds fault protection to


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    PDF IH5108 IH5108 HI548 5108s IH5108S.

    3211a

    Abstract: No abstract text available
    Text: HARRIS S E N I C O N D S E C T O R so HARRIS S E M I C O N D U C T O R C M M 5 1 1 4 A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features • IHAS 43 G2 27 1 G G 4 S 3 7 Ü bl3 5ÖE D Pinout 1$ PIN CERAMIC DtP


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    PDF 100KRAD 3211a

    Untitled

    Abstract: No abstract text available
    Text: CMM5114A HARRIS S E M IC O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features Pinout • Radiation Hardened to 100KRAD SI IS P M CERAM IC DIP C A S E OUTLINE D6, CONFIGURATION 3 TOP VIEW • Cosmic Ray Upeet Immunity 2 x 10r Errors/Bit Day (TYP)


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    PDF CMM5114A 100KRAD

    a006 mosfet

    Abstract: 30420000 fully protected p channel mosfet a006 HI548 HI-548 IH5108 IH5108CPE IH5108IJE IH5108MJE
    Text: IH5108 HARRIS SEniCOND SECTOR 43E T> •I M30S271 0 D 3 b cm P 2 *HAS IH5108 H A R R IS S E M I C O N D U C T O R 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for


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    PDF M30S271 IH5108 HI548 IH5108s IH5053 IH5108s. a006 mosfet 30420000 fully protected p channel mosfet a006 HI-548 IH5108CPE IH5108IJE IH5108MJE

    MBM27C512-25

    Abstract: 27C512-20
    Text: CMOS UV ERASABLE 524288-BIT READ ONLY MEMORY MBM 27C512-20-W MBM27C512-25-W August 1988 Edition 1.0 CMOS524288 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C512 is a high speed 524,288 b it static CMOS erasable and e lectrically reprogrammable read only memory EPROM}. It is especially


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    PDF 524288-BIT 27C512-20-W MBM27C512-25-W CMOS524288 27C512 28-pin 32-Pad 27C512. th02233190 MBM27C512-25 27C512-20

    SWITCHING TRANSFORMER ERL 39

    Abstract: No abstract text available
    Text: Ì l ì H A R R H C -5 5 0 9 A 1 IS S E M I C O N D U C T O R PRELIMINARY s u e Subscriber Line Interface Circuit March 1993 Features Description • Dl Monolithic High Vsltage Process • Compatible with Worldwide PBX and CO Performance Requirements • Controlled Supply ol Battery Feed Current with Programmable


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    PDF HC-550X SWITCHING TRANSFORMER ERL 39

    8109a

    Abstract: No abstract text available
    Text: 19-1092; Rev 0; 6/96 A I / X I A 1 1-input/6-O utput Video D istribution A m plifiers The MAX4135 achieves a -3dB bandwidth of 185MHz, with 0.1dB gain flatness to 40MHz. The MAX4136's -3dB bandw idth is 140MHz. Both devices deliver a 1000V/ps slew rate, as well as exceptional full-power


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    PDF MAX4135/MAX4136 MAX4135 MAX4136 185MHz, 40MHz. 140MHz. 000V/ps 185MHz 8109a

    njm4200 cross

    Abstract: njm making 741 LEM jrc 4200
    Text: ANALOG MULTIPLIER NJM4200 The NJM 4200 is the industry's first integrated circuit multiplier to have com plete com pensation for nonlinearity, the primary source o f error and distortion. This is also the first IC m ustiplier to have three on-board operational am plifiers


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    PDF NJM4200 NJM4200 njm4200 cross njm making 741 LEM jrc 4200

    Untitled

    Abstract: No abstract text available
    Text: HA7210, HA7211 November 1996 10kHz to 10MHz, Low Power Crystal Oscillator Features Description • Single Supply Operation at 3 2 kH z . 2V to 7V The HA7210 and HA7211 are very low power crystal-controlled oscillators that can be externally programmed to operate


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    PDF HA7210, HA7211 10kHz 10MHz, HA7210 HA7211 10MHz. 10MHz

    SOT23-6 AAAE

    Abstract: MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA
    Text: 19-1230; Rev 2; 6/97 J V Y Æ X A J V K 1GHz, Low-Power, SO T23, C urrent-Feedback A m plifiers w ith Shutdow n The MAX4223-MAX4228 are ideal for professional video applications, with differential gain and phase errors of 0.01% and 0.02°, 0.1 dB gain flatness of 300MHz, and a


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    PDF MAX4223-MAX4228 MAX4223/MAX4224/MAX4226/MAX4228 350pA MAX4223/ MAX4225/MAX4226 10pMAX MAX4223/MAX4224 MAX4225-MAX4228 4223-M MAX4224EUT-T SOT23-6 AAAE MAX4223 IN-87 la sot23-8 analog MH SOT23-8 av 8114 MAX4223ESA

    2U37

    Abstract: H1P transistor with three end QQ 8114 transistor 2N6985 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe
    Text: I INCH-POUND I MIL-S-1950 0/584 25 Ju ly 1990 MILITARY SPECIFICATION prut rniinn rrnn nrwt r r oc.ru ourauuu I UK u l u u , nr- r\Ai ir r\ rnnif»t t t a « Kr ruM CK ik a n ^ i^ iu k , tinti ▼ i ta nu nrnt r\éin i r\in i ru ^ n -ru L L TYPES JANTX. JANTXV. ANO JANS. 2N6985 AND 2N6986


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    PDF MIL-S-1950 2N6985 2N6986 MIL-S-19500. 2U37 H1P transistor with three end QQ 8114 transistor 2N6986 M11 marking transistor feedthru cap H1P transistor 4 pr 16 awg 3011 fe