Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous
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ISOPLUS220TM
25N80C
220TM
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous
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ISOPLUS220TM
25N80C
25VDS
728B1
065B1
123B1
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13N80C
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 13N80C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous
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ISOPLUS220TM
13N80C
220TM
13N80C
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SPA04N80C3
Abstract: No abstract text available
Text: SPA04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated
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SPA04N80C3
P-TO220-3-31
04N80C3
P-TO220-3-31
Q67040-S4434
SPA04N80C3
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diode 71A
Abstract: SPA06N80C3
Text: SPA06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated
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SPA06N80C3
P-TO220-3-31
06N80C3
P-TO220-3-31
Q67040-S4435
diode 71A
SPA06N80C3
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SPA11N80C3
Abstract: No abstract text available
Text: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated
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SPA11N80C3
P-TO220-3-31
11N80C3
P-TO220-3-31
Q67040-S4439
SPA11N80C3
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SPP06N80C3
Abstract: 06N80C3
Text: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated
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SPP06N80C3
P-TO220-3-1
Q67040-S4351
06N80C3
SPP06N80C3
06N80C3
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spw11n80c3
Abstract: 11n80c
Text: SPW11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated
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SPW11N80C3
P-TO247
Q67040-S4440
11N80C3
spw11n80c3
11n80c
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V = 13 A ID25 Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220
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ISOPLUS220TM
13N80C
728B1
065B1
123B1
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04n80
Abstract: 04N80C3 SPP04N80C3
Text: SPP04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated
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SPP04N80C3
P-TO220-3-1
Q67040-S4433
04N80C3
04n80
04N80C3
SPP04N80C3
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Untitled
Abstract: No abstract text available
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM IXKC 13N80C VDSS = 800 V ID25 = 13 A Ω RDS on = 290 mΩ Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol Test Conditions ISOPLUS 220
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ISOPLUS220TM
13N80C
728B1
065B1
123B1
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power switching
Abstract: ISO264 ISO264TM ID90
Text: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VGS Continuous ±20
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25N80C
ISO264TM
728B1
065B1
123B1
power switching
ISO264
ISO264TM
ID90
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transistor SPP08N80C3
Abstract: 08N80C3 SPP08N80C3 08N80
Text: SPP08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated
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SPP08N80C3
P-TO220-3-1
Q67040
S4436
08N80C3
transistor SPP08N80C3
08N80C3
SPP08N80C3
08N80
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11n80c
Abstract: 11N80C3 SPP11N80C3 max8210
Text: SPP11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated
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SPP11N80C3
P-TO220-3-1
Q67040-S4438
11N80C3
11n80c
11N80C3
SPP11N80C3
max8210
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Q67040-S4351
Abstract: SPP06N80C2
Text: Preliminary data SPP06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 900 mW · Extreme dv/dt rated
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SPP06N80C2
P-TO220-3-1
Q67040-S4351
Q67040-S4351
SPP06N80C2
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IXKR25N80C
Abstract: No abstract text available
Text: IXKR 25N80C Advanced Technical Information COOLMOS * Power MOSFET ID25 = 25 A VDSS = 800 V RDS on = 125 mW in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM D * G E153432
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25N80C
125mW
247TM
ISOPLUS247TM
E153432
ISOPLUS247
O-247
IXKR25N80C
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02N80C3
Abstract: No abstract text available
Text: SPP02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated
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SPP02N80C3
P-TO220-3-1
Q67040-S4432
02N80C3
02N80C3
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Untitled
Abstract: No abstract text available
Text: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany
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ICLS8023Z
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Trimble DSS 500
Abstract: No abstract text available
Text: LED System Driver IC ICLS8023Z Off-Line LED Current Mode Controllers with Integrated 800 V CoolMOS & Startup Cell Data Sheet Version 1.0, 2011-09-26 Industrial & Multimarket Edition 2011-09-26 Published by Infineon Technologies AG 81726 Munich, Germany
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ICLS8023Z
Trimble DSS 500
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smd transistor marking 12W
Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
Text: Preliminary data SPD06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated
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SPD06N80C2
P-TO252
Q67040-S4352
06N80C2
smd transistor marking 12W
smd transistor code 12w
06N80C2
TRANSISTOR SMD MARKING CODE 12w
smd transistor 12W 98
P-TO252
SPD06N80C2
SMD TRANSISTOR MARKING 2c
transistor SMD 12W
smd 12w 98
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06N80C3
Abstract: Q67040-S4351 SPP06N80C3
Text: SPP06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated
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SPP06N80C3
P-TO220-3-1
Q67040-S4351
06N80C3
06N80C3
Q67040-S4351
SPP06N80C3
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Untitled
Abstract: No abstract text available
Text: Target data sheet SPW17N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 800 V · Periodic avalanche rated RDS on 290 mW · Extreme dv/dt rated
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SPW17N80C2
P-TO247
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17N80C3
Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
Text: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 290 mΩ
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SPP17N80C3
SPB17N80C3
P-TO263-3-2
P-TO220-3-1
Q67040-S4353
17N80C3
17N80C3
SPP17N80C3
17n80
17n80c
SPB17N80C3
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zetex product
Abstract: PWM PFC LLC Controller
Text: LED Controller IC ICLS8082G Offline LED Controller For PFC And Dimming With Integrated 800 V CoolMOS Data Sheet for LED Controller IC Rev1.0, 2011-03-01 Industrial and Multimarket Edition 2011-03-01 Published by Infineon Technologies AG 81726 Munich, Germany
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ICLS8082G
ICLS8082G
PG-DSO-12
zetex product
PWM PFC LLC Controller
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