8/S 170 MOSFET TRANSISTOR Search Results

8/S 170 MOSFET TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

8/S 170 MOSFET TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NXP SMD TRANSISTOR MARKING CODE s1 Abstract: BSS84AK Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	BSS84AKV OT666 AEC-Q101 NXP SMD TRANSISTOR MARKING CODE s1 BSS84AK	PDF
8/S 170 MOSFET TRANSISTOR Abstract: No abstract text available Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	BSS84AKV OT666 AEC-Q101 8/S 170 MOSFET TRANSISTOR	PDF
Dual P-Channel MOSFET Abstract: g1 TRANSISTOR SMD MARKING CODE Text: SO T6 66 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	BSS84AKV OT666 AEC-Q101 771-BSS84AKV115 BSS84AKV Dual P-Channel MOSFET g1 TRANSISTOR SMD MARKING CODE	PDF
transistor smd code marking nc Abstract: No abstract text available Text: SO T6 66 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench	Original	NX1029X OT666 AEC-Q101 transistor smd code marking nc	PDF
MOSFET J162 Abstract: J473 MOSFET J147 Text: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz	Original	AGRA10XM AGRA10 IS-95 DS03-127RFPP MOSFET J162 J473 MOSFET J147	PDF
MOSFET TRANSISTOR SMD MARKING CODE nh Abstract: No abstract text available Text: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.	Original	PMV160UP O-236AB) MOSFET TRANSISTOR SMD MARKING CODE nh	PDF
AGRA10E Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable	Original	AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors	PDF
TRANSISTOR J477 Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1 Text: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and	Original	AGR21010E AGR21010E AGR21010EU DS03-038RFPP DS02-381RFPP) TRANSISTOR J477 krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1	PDF
MRF141 Abstract: UNELCO MICA CAPACITORS motorola MOSFET 935 2204B AN211A J101 VK200 arco capacitors 262 Nippon capacitors D11 0943 34 Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF141/D MRF141 MRF141 UNELCO MICA CAPACITORS motorola MOSFET 935 2204B AN211A J101 VK200 arco capacitors 262 Nippon capacitors D11 0943 34	PDF
AGR045010 Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB	PDF
2204B Abstract: J101 MRF140 VK200 arco capacitors 262 Unelco j101 Text: Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	Original	MRF140/D MRF140 2204B J101 MRF140 VK200 arco capacitors 262 Unelco j101	PDF
transistor zo 109 Abstract: wide band choke vk200 VK200 2204B AN211A J101 MRF141 arco capacitors 262 D11 0943 34 Text: Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF141/D MRF141 transistor zo 109 wide band choke vk200 VK200 2204B AN211A J101 MRF141 arco capacitors 262 D11 0943 34	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF141	PDF
mrf151g 300 Abstract: MRF151G Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF151G mrf151g 300 MRF151G	PDF

MRF141 Abstract: motorola MOSFET 935 2204B AN211A J101 VK200 S2230 Nippon capacitors Text: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF141/D MRF141 MRF141 motorola MOSFET 935 2204B AN211A J101 VK200 S2230 Nippon capacitors	PDF
TH 2190 HOT Transistor Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A GHZ-21 Text: AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	AGR21180EF AGR21180EF AGR19K180U AGR21180XF 12-digit TH 2190 HOT Transistor TH 2190 mosfet JESD22-C101A GHZ-21	PDF
MRF151G hf amplifier Abstract: MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g Text: Order this document by MRF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	Original	MRF151G/D MRF151G MRF151G hf amplifier MRF151G MRF151G Voltage min-max ferrite 1 phase transformer 0.14 ratio 120 watt G10 zener diode mrf151g 300 TOROIDS Design Considerations AN211A rf amplifier circuit mrf151g	PDF
e1220 Abstract: 2SK2437 Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.	OCR Scan	MT950206TR e1220 2SK2437	PDF
MRF141 Abstract: Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF141/D MRF141 Nippon capacitors	PDF
vk200 choke Abstract: MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	OCR Scan	MRF140/D MRF140 vk200 choke MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors	PDF
Nippon capacitors Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	OCR Scan	RF140/D MRF140 Nippon capacitors	PDF
MRF151G Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g Text: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF151G/D MRF151G L8776 Nippon capacitors rf amplifier circuit mrf151g	PDF
J360 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband	OCR Scan	MRF175GV MRF175GU MRF175GU RF175GV MRF175G MRF175GV J360	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF151/D MRF151	PDF

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8/S 170 MOSFET TRANSISTOR Search Results

8/S 170 MOSFET TRANSISTOR Result Highlights (5)

8/S 170 MOSFET TRANSISTOR Datasheets Context Search

NXP SMD TRANSISTOR MARKING CODE s1

8/S 170 MOSFET TRANSISTOR

Dual P-Channel MOSFET

transistor smd code marking nc

MOSFET J162

MOSFET TRANSISTOR SMD MARKING CODE nh

AGRA10E

TRANSISTOR J477

MRF141

AGR045010

2204B

transistor zo 109

Untitled

mrf151g 300

MRF141

TH 2190 HOT Transistor

MRF151G hf amplifier

e1220

MRF141

vk200 choke

Nippon capacitors

MRF151G

J360

Untitled