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    7TS TRANSISTOR Search Results

    7TS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7TS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3317

    Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
    Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223


    OCR Scan     		OT223) BDS949/951/953/955, 7110fl2b BDS950/952/954/956 OT223 BDS950 BDS952 BDS954 BDS956 C3317 S95 SMD 1S91 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF469,471 NPN PLASTIC POWER TRANSISTORS Complementary BF470, 472 Video Applications in TV PIN CO N FIG U R ATIO N 1. EM ITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 8 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 0.75 C 4.5 TYP. L 15.7 TYP. M 1.27 TYP.


    OCR Scan     		BF469 BF470, 00Q1220 PDF

    ua 471

    Abstract: BF469 BF471 BF470 471 npn
    Text: BF469, BF471 BF469, 471 NPN PLASTIC POWER TRANSISTORS Complementary BF470, 472 Video Applications in TV PIN CONFÎGURATION 1. EM IT TER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 I 0.75 G 4.5 TYP. L 15.7 TYP.


    OCR Scan     		BF469, BF471 BF470, ua 471 BF469 BF471 BF470 471 npn PDF

    DTA124GS

    Abstract: No abstract text available
    Text: DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124G V b ~7 > V 7* 7 /Transistors DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124GV h > v X *7 X < "j 5VTransistor Switch Digital Transistors Includes Resistors • \T>±l2I/Dimensions (Unit: mm)


    OCR Scan     		DTA124GU/DTA124GK/DTA124GS/DTA124GF DTA124GL/DTA124GA/DTA124G DTA124GL/DTA124GA/DTA124GV DTA124GU/DTA124GK/DTA124GS/DTAV1 DTA124G DTA124GS PDF

    Untitled

    Abstract: No abstract text available
    Text: • 7^5^537 O O g ^ f l T ■ _ SGS-TTiOMSON 1^ 10 g^@[l[L[i ir^@[i0(g i_ B U Z 6 0 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR S G S-THOMSON 3GE J> TYPE V DSS f*DS(on b BUZ60 400 V 1.0 fl


    OCR Scan     		BUZ60 7J51237 PDF

    Untitled

    Abstract: No abstract text available
    Text: b b S E ' m OOEflETH fib'? BU706 BU706D b^E » N AMER PHILIPS/DISCRETE SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-mode applications. The


    OCR Scan     		BU706 BU706D BU706D BU706D) 002fl2c PDF

    B0441

    Abstract: BD439 BD440 BD441 BD442
    Text: BD439, BD441 BD440, BD442 BD439, 441 BD440, 442 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM 7.8 B 10.5 10.8 C 2.4 2 .7 D 0.7 0 .9 A p i­


    OCR Scan     		BD439, BD441 BD440, BD442 B0441 BD439 BD440 BD442 PDF

    Untitled

    Abstract: No abstract text available
    Text: CDU BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC BCW60D = AD PACKAG E O UTLIN E DETAILS ALL DIM EN SION S IN mm _3.0 2.8" 0.14 0.48 0.38 3 2.6 Pin configuration 2.4


    OCR Scan     		BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MigimiCTMllgi STZT2907 STZT2907A MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciRCurrs • GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    OCR Scan     		STZT2907 STZT2907A STZT2222 STZT2222A ST2T2907 STZT2907/STZT2907A OT223 PDF

    BU706

    Abstract: BU706D U706
    Text: N AMER PHILIPS/D ISCRE TE bSE » • ^53*131 DD262T4 ñb'? * A P X I JI BU706 BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and line operated switch-mode applications. The


    OCR Scan     		DD262T4 BU706 BU706D BU706D BU706D) LL53R31 BU706 U706 PDF

    BCW60A

    Abstract: BCW60B BCW60C BCW60D
    Text: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arkin g BCW 60A = AA BCW 60B '= AB BCW 60C = AC BCW 60D = AD P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.o_ 2.8 0.48 0.38 0.14 3 2.6


    OCR Scan     		BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz OGO60 BCW60B BCW60D PDF

    T1P127

    Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT T1P121 TIP127 TIP126 circuit T1P-127 TIP126 tip125 P126 TIP120
    Text: TIP125 TIP126 TIP127 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circuit fo r audio ou tp u t stages and general am plifier and switching applications. T 0-22 0 plastic envelope. N-P-N complements are TIP120, T1P121


    OCR Scan     		TIP125 TIP126 TIP127 T0-220 TIP120, T1P121 TIP122. TIP126 T1P127 TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT TIP127 TIP126 circuit T1P-127 P126 TIP120 PDF

    395 transistor

    Abstract: of 395 diode bss395 transistor bss bss 395 bss 17 transistor
    Text: SIEMENS SIPMOS Small-Signal Transistor BSS 395 V DS = 50 V = 4 .4 A ^DS on = 0.3 CI Id • • • N channel Enhancem ent mode Package: TO -202 1> Not for new design! Type O rdering code for version in bulk Q 62702-S604 I BSS 395 M axim um Ratings Param eter


    OCR Scan     		O-202 Q62702-S604 fl23SbOS SIK02J63 6S35L 00S440G 395 transistor of 395 diode bss395 transistor bss bss 395 bss 17 transistor PDF

    NEL130681-12

    Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
    Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and


    OCR Scan     		NEL130681-12 NEL13208I-12 NEL1306: NEL1320: NEL1300 10pFMAX 1000pF 30dBm 38dBm NEL1306 2SC3542 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320 PDF

    u706

    Abstract: BU706 BU706D
    Text: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The


    OCR Scan     		D0262T4 BU706 BU706D BU706D BU706D) u706 PDF

    Untitled

    Abstract: No abstract text available
    Text: bRE D N AMER P H IL IP S /D IS C R E T E • bbS3R31 0Q3Qb65 D5T « A P X Product Specification Philips Semiconductors B U K456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		bbS3R31 0Q3Qb65 K456-200A/B O220AB BUK456 -200A -200B BUK456-200A/B 0030bAA PDF

    transistor Bc 542

    Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
    Text: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature


    OCR Scan     		T-33-0S- JEDECTO126 transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S PDF

    p367

    Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
    Text: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		SGSP363/P367 SGSP463/P467 SGSP563/P567 SGSP363 SGSP463 SGSP563 O-220 OT-93 SGSP367 SGSP467 p367 P467 sgsp567 P3B7 ic isd 1932 PDF

    Untitled

    Abstract: No abstract text available
    Text: • “ 7# 7^2^537 Q0HbQ33 QST ■ S 6 T H _ S C S -T H O M S O N K i» [L [l m M K S S T K 3 N 50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK3N50 ■ ■ ■ ■ . V dss R D S (on Id 500 V < 3.8 Q 2.7 A TYPICAL RDS(on) = 2.5 i2


    OCR Scan     		Q0HbQ33 STK3N50 OT-82 OT-194 CC22a70 C22B60 PDF

    BUK456

    Abstract: C055 T0220AB 7ts transistor
    Text: N AflER P H I L I P S / D I S C R E T E b^E D • hbS3=J31 003Qb6S DST » A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		003Qb6S BUK456-200A/B T0220AB BUK456 -200A -200B C055 7ts transistor PDF

    GaAs FET HEMT Chips

    Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)


    OCR Scan     		MGFC4453A MGFC4453A 12GHz 25pcs GaAs FET HEMT Chips on 5295 transistor transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor PDF

    transistor 8BB smd

    Abstract: smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su BUZ100S smd DIODE 3FS H7 marking code smd smd transistor c015
    Text: BUZ 10OS In fin e o n technologie» SIPMOS Power Transistor Product Summary Features 55 V • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.015 Í2 77 A • dv/df rated


    OCR Scan     		BUZ100S P-T0220-3-1 Q67040-S4001-A2 E3045A P-T0263-3-2 Q67040-S4001-A6 E3045 transistor 8BB smd smd diode marking 3fs smd code book B3 transistor transistor marking smd 7c smd diode 77a q1333su smd DIODE 3FS H7 marking code smd smd transistor c015 PDF

    BLY92C

    Abstract: mfc capacitor philips
    Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		711iOÃ BLY92C OT-120. 7Z68949 BLY92C mfc capacitor philips PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability


    OCR Scan     		Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05 PDF