verilog code for max1619
Abstract: pci card schematic
Text: 1 CONTENTS 0H CHAPTER 1 1H 2H 3H 4H 6H 7H 8H 9H 50H 1.2 KEY FEATURES . 5 51H 1.3 BLOCK DIAGRAM . 6
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179H177H
46H46H
47H47H
48H48H
si570
verilog code for max1619
pci card schematic
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Hitachi DSA0074
Abstract: HAT2022R MS-012AA 40X40X
Text: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting
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HAT2022R
012AA
MS-012AA
Hitachi DSA0074
HAT2022R
MS-012AA
40X40X
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Untitled
Abstract: No abstract text available
Text: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting
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HAT2022R
012AA
MS-012AA
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AM-1635
Abstract: No abstract text available
Text: MITEQ AM-1635 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 200–1000 AM-1635-1000 14 0.5 2.0:1 50/50 3.3 27 15 235 7H 200–2000 AM-1635-2000 13 0.75 2.2:1 50/50
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AM-1635
AM-1635-1000
AM-1635-2000
AM-1635-2500
AM-1635-3000
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h7d marking
Abstract: No abstract text available
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W4EHB:M?:;8;IJ/ =L"a`#?D1, W EM;IJ<?=KH;E<C;H?J/,+N.Y V !08M\_Sj .) O R =L"a`#%_Sj )'*-) -1 `< Q Y%fkb W2BJH7BEM=7J;9>7H=; W"NJH;C;:L :JH7J;:
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IPA50R140CP
97F78
799EH:
h7d marking
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7H diode
Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Text: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1, W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO
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IPA50R140CP
799EH
7H diode
IPA50R140CP
DIODE marking ED X9
diode marking BEM
LM7m
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Untitled
Abstract: No abstract text available
Text: STB6NB90 N - CHANNEL 900V - 1 .7H - 5.8A - D^PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 6N B90 900 V < 2.0 a 5.8 A . = TYPICAL RDS(on) 1.7 £2 . EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES
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STB6NB90
O-263
P011P6/E
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200D-100
Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
Text: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s
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200D-100
E82988
C-200A
200D-100
200D100
IEBo-400mA
two transistors
power transistor bjt 1000 a
1000v Transistor bjt
fuji bjt
vebo10v
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ADC0884
Abstract: EOM1DB EOM1DB22 bcj diode ADC0852 ADC0854 ADC0854BJ ADC0854CJ J08A J14A
Text: SflE D NATL SEMICOND LINEAR bSDHEM P 5 l ' O n - O l Au fl Semiconductor ADC0852/ADC0854 Multiplexed Comparator with 8-Bit Reference Divider NSC 2 ADC0852/ADC0854 National MTb QQ?3^7h General Description The ADC0852 and ADC0854 are CMOS devices that com
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ADC0852/ADC0854
ADC0852
ADC0854
tl/h/5521-27
L5G1124
DG73TÃ
TL/H/5521-28
ADC0852BJ
ADC0852BCJ
ADC0884
EOM1DB
EOM1DB22
bcj diode
ADC0854BJ
ADC0854CJ
J08A
J14A
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C25T03Q C25T04Q 2 7 .7 A / 3 0 ~ 4 0 V S Q U A R E-P A K FEATURES • Similar to TO-263AB Case, Surface Mount Device — 10.5C413 —^ ° Dual Diodes - Cathode Common o Low Forward Voltage Drop » \\\\N\WW 3 .7H 46)* 7 ° Low Power Loss, High Efficiency
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C25T03Q
C25T04Q
O-263AB
5C413)
C25T03Q
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transistor f485
Abstract: 853c
Text: [*XJ SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861T51/OPB861T55 PACKAGE DIMENSIONS SEE NOTE 3 - '1 s Gp - -.3 1 3 (7.94) OPTICAL ' 1 2 5 (3 1 7H CENTERLIN E \ f.485 (12.32) f .110 (2.79) E— .345 (6.76) I r DESCRIPTION The OPB861T series of switches is designed to allow the
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OPB861T51/OPB861T55
OPB861T
OPB861T51
OPB861T55
transistor f485
853c
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012AA
Abstract: No abstract text available
Text: A D E - 2 0 8 - 4 4 0 F Z HAT2022R Silicon N Channel Power MOS FET HITACHI Application 7h. Ed iti on J a n . 1996 SOP-8 High speed power switching Features • • • • Low on-resistance Capable of 4V gate drive Low drive current High density mounting
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HAT2022R
MS-012AA
012AA
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NJL56H400A
Abstract: NJL56H400 NJL57H400A IR led 940nm NJL56H380A NJL51H380A NJL57H400 NJL50HA
Text: N J L 51 H /51 V /5 5H /5 6H /5 7H 0 00 A INFRARED REMOTE CONTROL RECEIVER • GENERAL DESCRIPTION NJL50HA/000A series are small and high performance receiving devices for infrared remote control system. Regarding the transmission distance, NJL50H/V000A is longer than NJL50H/V000. The pulse width of
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NJL51
/55H/5BH/57H000A
NJL50HA/000A
NJL50H/V000A
NJL50HA/000.
NJL51V000A
NJL51H000AF3
NJL51H/51V/55H/56H/57H000A
NJL56H400A
NJL56H400
NJL57H400A
IR led 940nm
NJL56H380A
NJL51H380A
NJL57H400
NJL50HA
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SG30TC
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away
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SG30TC
FTO-220G
J533-1)
SG30TC15M
50IIz
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SG DIODE MARKING
Abstract: 2KV DIODE diode sg 45
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA
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FTO-220G
50IIz
J533-1)
SG DIODE MARKING
2KV DIODE
diode sg 45
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diodes C712
Abstract: No abstract text available
Text: 7294 6 21 POWEREX INC 74 D E | 7H T +bE l □ 0 0 1 4 0 i T f l ^ | ~ HIGH SPEED Fast Recovery Rectifier 2000 Volts T-o3~z3 _ I A 6 9 6 ~1 1000 Amps The A696 Series of high power rectifier diodes is designed for use in high frequency applications up to 5 KHz ; or wherever a fast/soft recovery per
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smd diode marking JC
Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Text: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g
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DF30SC3ML
STO-220
smd diode marking JC
DIODE BJE
DIODE BJE smd
marking JC diode
df30sc3
smd marking 5G
DF30SC3ML
hm marking smd DIODE
SHINDENGEN DIODE
sto220
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H3B SMD code
Abstract: BTS 131 SMD BTS 129 FC34 transistor smd H3b
Text: • 0235 bD 5 □ 1 0 3 3 ,ì 3 7HÖ SIEMENS T rilithIC BTS 774 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications
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023SbDS
fiS35bOS
fl23SbOS
P-DSO-28-9
H3B SMD code
BTS 131 SMD
BTS 129
FC34
transistor smd H3b
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Z7 DIODE
Abstract: Diode RJ 4B KT234510 bipolar power transistor vce 600 volt 100a bipolar transistor 300 volt 5 ampere transistor
Text: POÜJEREX INC m *lñ tm w D E |7H 'ì4 b a i K DGD2D3H D | r " - 2 > 3 '2 .'J KT234510 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412)925-7272 S p l Í t mD U 3 ¡ B í p O l S t Transistor Module 100 Am peres/600 Volts Description Powerex Split-Dual Bipolar Transistor
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0002Q3H
-r-33~
KT234510
Amperes/600
KT234510
Z7 DIODE
Diode RJ 4B
bipolar power transistor vce 600 volt
100a bipolar transistor
300 volt 5 ampere transistor
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BYW56
Abstract: marking JC diode BYW54 BYW55 PHILIPS BYW54
Text: b3E J> m b b S 3 T E 4 DD 7H 33 5 Tbì m S I C 3 BYW54 to 56 N A P C / P H I L I P S SE M I C O N D FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATASHEET CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes,
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DD7H335
BYW54
BYW55
BYW56
50rcuits
OD-57.
BYW56
marking JC diode
PHILIPS BYW54
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UPC1394C
Abstract: SRW42ES uPC1394 nec tv diagram switching Regurator srw42es07
Text: E C EL EC TRON ICS INC 7H DEÍb4S7SES D O Gfltlt 2 | p i> W I . BIPOLAR ANALOG INTEGRATED CIRCU IT j u P C I >íwtá¿ií.'^bU:r-' 3 9 4 C SW ITC H IN G REGULATOR 1C FOR TV SET The jnPC1394C is a switching regurator IC especially designed fo r T V sets. It can be used fo r both type o f TV sets, insulated
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uPC1394C
fa427S25
J22686
SRW42ES
uPC1394
nec tv diagram
switching Regurator
srw42es07
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upc1394c
Abstract: uPC1394 u703 T4E7
Text: E C EL EC TRON ICS INC 7H DEÍb4S7SES D O Gfltlt 2 | p i> W I . BIPOLAR ANALOG INTEGRATED CIRCU IT j u P C I >íwtá¿ií.'^bU:r-' 3 9 4 C SW ITC H IN G REGULATOR 1C FOR TV SET The jnPC1394C is a switching regurator IC especially designed fo r T V sets. It can be used fo r both type o f TV sets, insulated
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uPC1394C
fa427S25
J22686
uPC1394
u703
T4E7
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LS2025
Abstract: ULS2013H 9732d ULS2003 UNL20
Text: . HIGH-VOLTAGE , HIGH-CUBRENT DARLINGTON ARRAYS 2001 2025 U L S 2 0 X X H /R I n— o Cl - - h e ] Ü L* - 1 a~\-L> °— T- — m l 3 — Tu I □ 3 - [ > M ~ —noi Q j ~7h —n n Dwg No A-9594 A B S O L U T E M A X I M U M R A T IN G S
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ULS2000EK,
ULS2000H,
ULS2000R
MIL-STD-883,
16-pin
ULS20X2*
ULS20X3*
ULS20X4*
ULS20X5*
LS2025
ULS2013H
9732d
ULS2003
UNL20
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LD25C
Abstract: No abstract text available
Text: blE MITSUBISHI J> 0Gm?7h m 1MT « H I T S FU-41SDF, FU-44SDF D I S C R E T E SC 1.3 n m DFB-LD Module with Singlemode Fiber Pigtail M odule ty p e F U -4 1 S D F a n d F U -4 4 S D F have been developed for coupling a singlem ode optical fiber a n d a 1.3wm w av elen g th InGaAsP DFB LD
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FU-41SDF,
FU-44SDF
FU-41SDF
FU-44SDF
0Q1477Ö
FU-41SDF)
LD25C
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