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    7C131 Search Results

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    7C131 Price and Stock

    Cypress Semiconductor CY7C1318KV18-300BZXC

    NO WARRANTY
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    DigiKey CY7C1318KV18-300BZXC Tray 1,597 1
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    Rochester Electronics CY7C1318KV18-300BZXC 444 1
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    Flip Electronics CY7C1318KV18-300BZXC 136
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    KEMET Corporation C327C131JAG5TA

    CAP CER RAD 130PF 250V C0G 5%
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    DigiKey C327C131JAG5TA Bulk 425 1
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    Mouser Electronics C327C131JAG5TA 2,999
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    TTI C327C131JAG5TA Bulk 2,000
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    Cypress Semiconductor CY7C1315KV18-333BZC

    NO WARRANTY
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    DigiKey CY7C1315KV18-333BZC Tray 142 1
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    Flip Electronics CY7C1315KV18-333BZC 1,448
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    Infineon Technologies AG CY7C1314KV18-250BZXC

    IC SRAM 18MBIT PAR 165FBGA
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    DigiKey CY7C1314KV18-250BZXC Tray 126 1
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    Mouser Electronics CY7C1314KV18-250BZXC 57
    • 1 $31.9
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    Cypress Semiconductor CY7C1314KV18-250BZC

    NO WARRANTY
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    DigiKey CY7C1314KV18-250BZC Tray 116 1
    • 1 $8.79
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    7C131 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 001-07165 Spec Title: 7C1313CV18/7C1315CV18, 18-MBIT QDR R II SRAM 4-WORD BURST ARCHITECTURE Sunset Owner: Jayasree Nayar (NJY) Replaced by: NONE 7C1313CV18 7C1315CV18 18-Mbit QDR II SRAM 4-Word Burst Architecture 18-Mbit QDR® II SRAM 4-Word Burst Architecture


    Original
    7C1313CV18/CY7C1315CV18, 18-MBIT CY7C1313CV18 CY7C1315CV18 PDF

    CEL9200

    Abstract: CY7C1019 CY7C1021 CY7C1021V sumitomo silver epoxy
    Text: Cypress Semiconductor Qualification Report QTP# 97416 VERSION 1.0 June, 1998 1 Meg SRAM, R42D Technology, Fab 4 Qualification CY7C1021V 64K x 16 Static RAM CY7C1019V 128K x 8 Static RAM Cypress Semiconductor, Inc. 1 Meg SRAM - R42D Technology - Fab 4 Device: CY7C1021V/CY7C1019V 7C1321D/7C1319D


    Original
    CY7C1021V CY7C1019V CY7C1021V/CY7C1019V 7C1321D/7C1319D) 44-pin CY7C1021) 32-pin CY7C1019) CEL9200 CY7C1019 CY7C1021 CY7C1021V sumitomo silver epoxy PDF

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original
    CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c PDF

    CY7C1298A

    Abstract: GVT7164C18
    Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry


    Original
    CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18 PDF

    PLCC-52

    Abstract: CY7C130 CY7C131 CY7C140 CY7C141 CY7C131-25JC CY7C131-35J Z1014
    Text: CY7C130, CY7C130A 7C131, 7C131A CY7C140, CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1K x 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original
    CY7C130, CY7C130A CY7C131, CY7C131A CY7C140, CY7C141 CY7C130/130A/CY7C131/131A/CY7C140 CY7C130/130A/ CY7C131/131A PLCC-52 CY7C130 CY7C131 CY7C140 CY7C141 CY7C131-25JC CY7C131-35J Z1014 PDF

    7C13135

    Abstract: CY7C140-35PC 7C130 CY7C130 CY7C131 CY7C140 CY7C141
    Text: CY7C130/7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C130/7C131/CY7C140 and CY7C141 are high-speed CMOS 1K by 8 dual-port static RAMs. Two ports


    Original
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131/CY7C140 CY7C141 CY7C130/ CY7C131 CY7C140/CY7C141 16-bit 7C13135 CY7C140-35PC 7C130 CY7C130 CY7C140 PDF

    CY7C

    Abstract: CY7C130 CY7C131 CY7C140 CY7C141
    Text: CY7C130, CY7C130A 7C131, 7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original
    CY7C130, CY7C130A CY7C131, CY7C131A CY7C130/130A/CY7C131/131A/CY7C140 CY7C141 CY7C130/130A/CY7C131/131A CY7C CY7C130 CY7C131 CY7C140 CY7C141 PDF

    81c78

    Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
    Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M


    Original
    2147-35C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35M 2148-45C 81c78 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference PDF

    CY7C130

    Abstract: CY7C131 CY7C140 CY7C141
    Text: CY7C130, CY7C130A 7C131, 7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power


    Original
    CY7C130, CY7C130A CY7C131, CY7C131A CY7C130/130A/CY7C131/131A CY7C140/CY7C141 CY7C130/130A/CY7C131/131A; 48-pin CY7C13ication CY7C130 CY7C131 CY7C140 CY7C141 PDF

    CY7C130

    Abstract: CY7C131 CY7C140 CY7C141
    Text: CY7C130/7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns


    Original
    CY7C130/CY7C131 CY7C140/CY7C141 65-micron CY7C130/CY7C131 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin CY7C130 CY7C131 CY7C140 CY7C141 PDF

    CY7C136E

    Abstract: CY7C131AE-15JXI CY7C136AE-55NXI
    Text: 7C131E, 7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization


    Original
    CY7C131E, CY7C131AE CY7C136E, CY7C136AE CY7C131E CY7C136E CY7C136AE CY7C131AE-15JXI CY7C136AE-55NXI PDF

    C1307

    Abstract: cY7c131 I CY7C130 CY7C131 CY7C140 CY7C141 C130-15 C1303 C13017
    Text: fax id: 5200 1CY 7C14 0 CY7C130/7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power


    Original
    CY7C130/CY7C131 CY7C140/CY7C141 65-micron CY7C130/CY7C131 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin C1307 cY7c131 I CY7C130 CY7C131 CY7C140 CY7C141 C130-15 C1303 C13017 PDF

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original
    CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 PDF

    C1303

    Abstract: CY7C130 CY7C131 CY7C140 CY7C141 7c130 CY7C131-35JC C1307
    Text: fax id: 5200 1CY 7C14 0 CY7C130/7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power


    Original
    CY7C130/CY7C131 CY7C140/CY7C141 65-micron CY7C130/CY7C131 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin C1303 CY7C130 CY7C131 CY7C140 CY7C141 7c130 CY7C131-35JC C1307 PDF

    CY7C131E-55

    Abstract: N5210 30380 CY7C136E
    Text: 7C131E, 7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location 7C131E / 7C131AE / CY7C136E / CY7C136AE are


    Original
    CY7C131E, CY7C131AE CY7C136E, CY7C136AE CY7C131E CY7C136E CY7C136AE CY7C131E-55 N5210 30380 PDF

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/7C131 easily ex­


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140 PDF

    ebe switches

    Abstract: CY7C130 CY7C131 CY7C140 CY7C141 7CJ41-25 7CI40-35
    Text: CYPRESS SEMICONDUCTOR 00 0 3 4 2 1 EbE D 5 • CY7C130/7C131 CY7C140/CY7C141 -Z Z A Z . o y n p rrQ C 1024 x 8 Dual-Port Static RAM SEMICONDUCTOR Features Functional Description • 0,8-micron CMOS for optimum speed/power • Automatic power-down • TTL-compatible


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 20O1V CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY7C131/CY7C140/ ebe switches CY7C130 CY7C131 CY7C140 CY7C141 7CJ41-25 7CI40-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C130/7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY 7C131/CY7C140/ PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5200 CY7C130/7C131 CY7C140/CY7C141 W CYPRESS 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power


    OCR Scan
    130/C 140/C 65-micron CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin PDF

    7C130

    Abstract: L1314
    Text: CY7C130/7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each


    OCR Scan
    CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 7C130/CY7C131/CY7C140/ CY7C14 7C130 L1314 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C130/7C131 _ CY7C140/CY7C141 = SEMICONDUCTOR 1024 x 8 D ual-Port Static R A M Features Functional Description • 0.8-micron CMOS for optimum speed/power T he CY 7C 130/CY7C13 L/CY7C140/ CY7C141 arc high-speed C M O S IK by 8 dual-port static RA M s. Two ports are pro­


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7CI31 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7CI40/CY7C141 130/CY7C13 L/CY7C140/ PDF

    3246A

    Abstract: No abstract text available
    Text: fax id: 5200 CY7C130/7C131 CY7C140/CY7C141 CYPRESS 1K x 8 Dual-Port Static RAM Functional Description Features True Dual-Ported memory ceils which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power


    OCR Scan
    65-micron CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin IDT713CVIDT7140 3246A PDF

    Zl13

    Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
    Text: CY7C130/7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/7C131 easily ex­


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 IDT7130 IDT7140 Zl13 ZL12 CY7C130 CY7C131 CY7C140 CY7C141 C1308 wj 75 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ S' CY7C130/7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than


    OCR Scan
    CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY7C131/CY7C140/ CY7C141 PDF