IRF5210
Abstract: No abstract text available
Text: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN A TO3 FOR HIGH RELIABILITY APPLICATIONS. 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )
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IRF5210
00A/ms
300ms,
IRF5210
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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IRFN5210
-100V
-120A
780ms)
O-276AB)
IRF5210SMD
IRF5210SMD
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uc 5587
Abstract: IRFN5210 LE17
Text: P-CHANNEL POWER MOSFET IRFN5210 • Low RDS on Power MOSFET Transistor, Fully Avalanche Rated • Hermetic Ceramic Surface Mount package • Designed For Fast Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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PDF
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IRFN5210
-100V
-120A
780mJ
O-276AB)
IRF5210SMD
IRF5210SMD
uc 5587
IRFN5210
LE17
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IRF5210
Abstract: No abstract text available
Text: IRF5210 MECHANICAL DATA Dimensions in mm inches P–CHANNEL MOSFET IN TO3 FOR HIGH RELIABILITY APPLICATIONS. 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 2 1 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 100V 40A 0.07W
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Original
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PDF
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IRF5210
00A/ms
300ms,
IRF5210
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IRFM5210
Abstract: No abstract text available
Text: IRFM5210 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)
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Original
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PDF
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IRFM5210
O254AA
00A/ms
300ms,
IRFM5210
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