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    IRFD020

    Abstract: oasi 10C1 IRFD022 19s7
    Text: HE T D I 4ÖSS452 ^ QQdfl3ti2 *4 1 nil. _ Data Sheet No. PD-9.470A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER TO R IRFD0 2 0 IRFD0 2 2 HEXFET TRANSISTORS N-CHANNEL HEXDIP 1-WATT RATED POWER MOSFETs IN A 4-PIN, DUAL-IN-LINE PACKAGE FEATURES: 50 Volt, 0.10 Ohm, 1-Watt HEXDIP


    OCR Scan     		00Qfl3ti5 C-116- IRFD020 oasi 10C1 IRFD022 19s7 PDF

    Untitled

    Abstract: No abstract text available
    Text: • 43D2H71 0053722 bOfl HAS 2N 6759 2N 6760 fü HARRIS N-Channel Enhancem ent-Mode Power Field-Effect Transistors A u g u st 1991 Features Package T 0 -2 0 4 A A B O T T O M VIEW • 4.5A and 5.5A, 350V - 400V • r0s on - 1-0 ^ and 1-Sfi SOURCE • SOA is Power-Dissipation Limited


    OCR Scan     		43D2H71 D05372S PDF