k1150pg
Abstract: HS817c TCDF 1900 and TCDF 1910 TCDF 1910 HS817 K8013P HS817b K3052PG CNY71 cny21 equivalent
Text: FPQU2.E76222 Optical Isolators - Component Optical Isolators – Component VISHAY SEMICONDUCTOR GMBH THERESIENSTRASSE 2 74072 HEILBRONN, GERMANY E76222 Coupling system F, Part No. 6N, followed by -135, -136, -137, -138, -139. Part Nos. CNY21, -21N, DG3831B, may or may not be followed by coupling system G. Part Nos. CNY64, -64A, -64B, may or may not be
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E76222
CNY21,
DG3831B,
CNY64,
CNY65
CNY66,
CNY71,
3010P,
-3010PG,
k1150pg
HS817c
TCDF 1900 and TCDF 1910
TCDF 1910
HS817
K8013P
HS817b
K3052PG
CNY71
cny21 equivalent
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TCDF 1910
Abstract: HS817c K8013P k1150pg TCDF 1900 and TCDF 1910 K3052P K1150P HS817b TCDT2204 TCDF 1900
Text: FPQU2.E76222 Optical Isolators - Component Optical Isolators – Component VISHAY SEMICONDUCTOR GMBH THERESIENSTRASSE 2 74072 HEILBRONN, GERMANY E76222 Coupling system F, Part No. 6N, followed by -135, -136, -137, -138, -139. Part Nos. CNY21, -21N, DG3831B, may or may not be followed by coupling system G. Part Nos. CNY64, -64A, -64B, may or may not be
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E76222
CNY21,
DG3831B,
CNY64,
CNY65
CNY66,
CNY71,
3010P,
-3010PG,
TCDF 1910
HS817c
K8013P
k1150pg
TCDF 1900 and TCDF 1910
K3052P
K1150P
HS817b
TCDT2204
TCDF 1900
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A115A
Abstract: BYT41D T6818 T6818-TBQ T6818-TBS T6828 T6828-TBQ T6828-TBS U5021M diode S3L 49
Text: Features • • • • • • • • • • • • • Supply voltage up to 40 V RDSon typ. 0.5 Ω @ 25°C, max. 1 Ω @ 150°C Up to 1.5 A output current Three half-bridge outputs formed by three high-side and three low-side drivers Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors
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07-Nov-01
A115A
BYT41D
T6818
T6818-TBQ
T6818-TBS
T6828
T6828-TBQ
T6828-TBS
U5021M
diode S3L 49
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PDF
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RAYTHEON
Abstract: RMPA39000
Text: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier Description Features The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs
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RMPA39000
RMPA39000
RAYTHEON
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bandfilter
Abstract: preamplifier AGC bandfilter 35 C111 U4255BM-B U4255BM-BFN U4256BM B57 605 6P833
Text: Features • • • • • • • • • • FM-double conversion system Integrated second IF filter with software controlled bandwidth Completely integrated FM demodulator Soft mute and multipath noise cancellation Receiving condition analyzer AM up/down conversion system
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U4255BM-B
U4255BM-B
27-Nov-01
bandfilter
preamplifier AGC
bandfilter 35
C111
U4255BM-BFN
U4256BM
B57 605
6P833
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PDF
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RAYTHEON
Abstract: RMBA09500-58
Text: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and
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RMBA09500-58
RMBA09500
RAYTHEON
RMBA09500-58
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AC100
Abstract: T2526 atmel 350 so8 atmel 336
Text: Features • • • • • • • No external components except PIN diode Supply-voltage range: 2.7 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Automatic supply voltage adaptation Enhanced immunity against ambient light disturbances
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T2526
T2526
13-Nov-01
AC100
atmel 350 so8
atmel 336
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IC 566 vco
Abstract: power tr unit j122 J122 transistor transistor j122 MLF32 PCS30 T0345 56638 Infineon 77 GHz VCO
Text: Features • • • • • • Supply-voltage range 2.7 V to 3.3 V Single sideband upconverters save filter cost Chosen architecture needs only one synthesizer 100 dB control range of IF & RF -VGAs 105 mA current consumption Programmable output power: PCS band: 8 dBm @ 54 dBc APCR, cellular band: 9 dBm
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MLF32
22-Oct-01
IC 566 vco
power tr unit j122
J122 transistor
transistor j122
PCS30
T0345
56638
Infineon 77 GHz VCO
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PDF
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52887
Abstract: 67025E A12L M67025E MMK2-67025EV-30 MMK2-67025EV-30-E
Text: Features • Fast access time: 30/45 ns • Wide temperature range: – -55°C to +125°C • Separate upper byte and lower byte control for multiplexed bus compatibility • Expandable data bus to 32 bits or more using master/slave chip select when using
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atmel 1206
Abstract: T0797 TSSOP16 9G20 DBM-200
Text: Features • • • • Gain control in 20-dB steps Very low I/Q amplitude and phase errors High input P1dB Buffered IF OUT available through baseband output Applications 65 - 300 MHz SiGe IF Receiver / Demodulator • Infrastructure digital communication systems
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20-dB
T0797
T0797
03-Dec-01
atmel 1206
TSSOP16
9G20
DBM-200
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PDF
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OPA03
Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in
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5962-0051801VQC
Abstract: sc80c32 80C32 80C32E 80C52 SB40 SC80C32E
Text: Features • • • • • • • • • • • • • • • • • • • 8032 pin and instruction compatible Four 8-bit I/O ports Three 16-bit timer/counters 256 bytes RAM Full duplex UART Asynchronous port reset 6 sources, 2 level interrupt structure
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16-bit
125oC)
40-pin,
44-pin
SCC9521002
80C32E
80C32E
80C52
5962-0051801VQC
sc80c32
80C32
SB40
SC80C32E
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PDF
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PGA144
Abstract: 144 PGA 144 pin pga 81F64842B Atmel DATE CODE PGA-120 PGA 84 PGA84 PGA120
Text: 68 pins PGA Ceramic Pin Grid Array PGA Package Outlines Code:8M Date: 15/12/95 Rev. B – 23/08/01 1 PGA 84 pins PGA Code 8R Date: 21/07/00 2 Rev. B – 23/08/01 100 pins PGA Code:GT Date: 14/06/00 3 PGA Rev. B – 23/08/01 PGA 120 pins PGA Code:GU Date: 25/06/99
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atmel 1215
Abstract: Atmel 540 e5551 atmel T5551 T5551-PAE 81F64842B T555101-PAE e5551 atmel 822
Text: Features • Universal metal leadframe packaging for all identification applications, especially for • • • • contactless cards and small coins Optimized mechanical stability With internal capacitor Designed for high volumes Overall thickness 400 µm
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T5551
e5551
T5551
05-Dec-01
atmel 1215
Atmel 540
e5551 atmel
T5551-PAE
81F64842B
T555101-PAE
atmel 822
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PDF
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81F64842B
Abstract: transistor t05 80C51 T89C51RD2
Text: This errata sheet describes the functional deviations known at the release date of this document. Errata History Bootloader Version Trouble list Status 2.1 T01, T02, T03, T04, T05, T07, TO8 Not Fixed 2.4 T04, T06, T07, T08 Not Fixed 80C51 MCUs Trouble descriptions
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80C51
16-byte
81F64842B
transistor t05
T89C51RD2
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SMDJ-65609EV-40SV
Abstract: M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ
Text: Features • Operating voltage: 3.3V • Access time: 40ns • Very low power consumption • • • • • • • • – active: 180mW Max – standby: 70µW (Typ) Wide temperature Range: -55°C to +125°C 400 Mils width package TTL compatible inputs and outputs
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180mW
200Krads
M65609E
SMDJ-65609EV-40SV
MMDJ-65609EV-40
MMDJ-65609EV-40-E
MMDJ-65609EV-40MQ
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Xilinx XC2000
Abstract: Temic ulc MAX5000 Lattice PLSI IC AN 7111 actel ACT1 XC7000 6108 SRAM 81F64842B st 4634
Text: Because time is money in today's electronics market, programmable devices such as FPGAs are more popular than ever in the development of applications, providing a flexible way to combine a quick design cycle with lowvolume initial production. Once designs are proven and stable, the top priorities are
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RAYTHEON
Abstract: RMDA25000
Text: RMDA25000 23-28 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
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RMDA25000
RMDA25000
RAYTHEON
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PDF
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MMIC SWITCH
Abstract: RTPA5250-130
Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information
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RTPA5250-130
RTPA5250-130
MMIC SWITCH
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RAYTHEON
Abstract: Raytheon Company 7073 8251 RMPA29100
Text: RMPA29100 27-30 GHz Power Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RMPA29100 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA29100 is a 3-stage GaAs
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RMPA29100
RMPA29100
RAYTHEON
Raytheon Company
7073
8251
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PDF
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AXP 209 IC
Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Text: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH
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OCR Scan
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3194621Road
AXP 209 IC
sem 2105 16 pin
AXP 202
AEG T 51 N 1200
77480
48409
IC SEM 2105
Pioneer PA 0016
94-4033
sem 2105
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PDF
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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PDF
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BV EI 304 3160
Abstract: str f 6456 ic sw 2604 BV EI 304 3510 BV EI 303 3535 STR 6755 STR 6456 STR G 6352 AMI Semiconductor 9449 sw 2604 ic
Text: T e m ic Sales Offices Semiconductors Addresses Europe France TEMIC France Les Quadrants 3, avenue du centre B.P. 309 78054 St.-Q uentin-en-Y velines Cedex Tel: 33 1 3060 7000 Fax: 33 1 3060 7111 Germany TEMIC TELEFUNKEN m icroelectronic GmbH Erfurter Strasse 31
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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