EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EIA1414-4P
Abstract: EIB1414-4P
Text: Excelics EIA/EIB1414-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 4W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EIA/EIB1414-4P
49dBm
EIA1414-4P
3120mA
360mA
35dBm
175oC
150oC
45dBc
26dBm/Tone
EIA1414-4P
EIB1414-4P
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EPA030B
Abstract: No abstract text available
Text: Excelics EPA030B PRELIMINARY DATA SHEET High Performance Heterojunction Dual-Gate FET • • • • • • • +18.0dBm TYPICAL OUTPUT POWER 19.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” DUAL GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING
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EPA030B
12GHz
EPA030B
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EIA1011-2P
Abstract: EIB1011-2P
Text: Excelics EIA/EIB1011-2P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 2W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1011-2P
46dBm
EIA1011-2P
180mA
32dBm
175oC
150oC
-65/175oC
-65/150oC
45dBc
EIA1011-2P
EIB1011-2P
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EIA1415-2P
Abstract: EIB1415-2P
Text: Excelics EIA/EIB1415-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 2W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EIA/EIB1415-2P
35GHz,
35GHz
46dBm
EIA1415-2P
35GHz
180mA
32dBm
175oC
EIA1415-2P
EIB1415-2P
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EIA1819-1P
Abstract: EIB1819-1P
Text: Excelics EIA/EIB1819-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.7-19.7GHz, 1W Internally Matched Power FET • • • • • • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1819-1P
43dBm
EIA1819-1P
32dBm
175oC
150oC
45dBc
20dBm/Tone
-65/175oC
-65/150oC
EIA1819-1P
EIB1819-1P
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EIA1415-8P
Abstract: 7371711
Text: Excelics EIA1415-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.4-15.35GHz, 8W Internally Matched Power FET • • • • • 14.4-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1415-8P
35GHz,
35GHz
39dBm
35GHz
6240mA
720mA
120mA
EIA1415-8P
7371711
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EIA1414-2P
Abstract: EIB1414-2P
Text: Excelics EIA/EIB1414-2P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 2W Internally Matched Power FET • • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1414-2P
46dBm
EIA1414-2P
180mA
32dBm
175oC
150oC
-65/175oC
-65/150oC
45dBc
EIA1414-2P
EIB1414-2P
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EIA1213-4P
Abstract: EIB1213-4P
Text: Excelics EIA/EIB1213-4P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 4W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1213-4P
25GHz,
25GHz
49dBm
EIA1213-4P
25GHz
3120mA
360mA
35dBm
EIA1213-4P
EIB1213-4P
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Untitled
Abstract: No abstract text available
Text: Excelics EIA1415A-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-15.35GHz, 4W Internally Matched Power FET • • • • • 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER
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35GHz
EIA1415A-4P
35GHz,
EIA1415-4P
360mA
35dBm
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EIA1314-2P
Abstract: EIB1314-2P
Text: Excelics EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET • • • • • • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1314-2P
46dBm
EIA1314-2P
180mA
32dBm
175oC
150oC
-65/175oC
-65/150oC
45dBc
EIA1314-2P
EIB1314-2P
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EIA1415-4P
Abstract: EIB1415-4P
Text: Excelics EIA/EIB1415-4P Not recommended for new designs. Contact factory. Effective 03/2003 14.40-15.35GHz, 4W Internally Matched Power FET • • • • • • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 27% TYPICAL
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EIA/EIB1415-4P
35GHz,
35GHz
49dBm
EIA1415-4P
35GHz
3120mA
360mA
35dBm
EIA1415-4P
EIB1415-4P
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EIA1314A-8P
Abstract: No abstract text available
Text: Excelics EIA1314A-8P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 8W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1314A-8P
39dBm
6240mA
720mA
120mA
38dBm
175oC
150oC
-65/175oC
EIA1314A-8P
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EIA1011-4P
Abstract: EIB1011-4P
Text: Excelics EIA/EIB1011-4P Not recommended for new designs. Contact factory. Effective 03/2003 10.7-11.7GHz, 4W Internally Matched Power FET • • • • • • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1011-4P
49dBm
EIA1011-4P
3120mA
360mA
35dBm
175oC
150oC
45dBc
26dBm/Tone
EIA1011-4P
EIB1011-4P
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EIA1213-2P
Abstract: EIB1213-2P
Text: Excelics EIA/EIB1213-2P Not recommended for new designs. Contact factory. Effective 03/2003 12.75-13.25GHz, 2W Internally Matched Power FET • • • • • • 12.75-13.25GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 30% TYPICAL
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EIA/EIB1213-2P
25GHz,
25GHz
46dBm
EIA1213-2P
25GHz
180mA
32dBm
175oC
EIA1213-2P
EIB1213-2P
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EIA1818-2P
Abstract: EIB1818-2P
Text: Excelics EIA/EIB1818-2P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 2W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1818-2P
75GHz,
75GHz
46dBm
EIA1818-2P
75GHz
180mA
32dBm
175oC
EIA1818-2P
EIB1818-2P
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Untitled
Abstract: No abstract text available
Text: Excelics EIA1616-8P Not recommended for new designs. Contact factory. Effective 03/2003 16.2-16.4GHz, 8W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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39dBm
EIA1616-8P
EIA1616-8P
720mA
38dBm
175oC
-65/175oC
6240mA
120mA
150oC
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Untitled
Abstract: No abstract text available
Text: Excelics EIA1314A-4P Not recommended for new designs. Contact factory. Effective 03/2003 13.0-14.5GHz, 4W Internally Matched Power FET • • • • • 13.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM FEATURES HIGH PAE 27% TYPICAL +36.0dBm TYPICAL P1dB OUTPUT POWER
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EIA1314A-4P
EIA1314A-4P
360mA
35dBm
175oC
-65/175oC
3120mA
150oC
-65/150oC
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EIA1718A-2P
Abstract: EIB1718A-2P
Text: Excelics EIA/EIB1718A-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.3-18.1GHz, 2W Internally Matched Power FET • • • • • • 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1718A-2P
46dBm
EIA1718A-2P
180mA
32dBm
175oC
150oC
-65/175oC
-65/150oC
45dBc
EIA1718A-2P
EIB1718A-2P
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EIA1718-1P
Abstract: EIB1718-1P
Text: Excelics EIA/EIB1718-1P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1718-1P
43dBm
EIA1718-1P
32dBm
175oC
150oC
45dBc
20dBm/Tone
-65/175oC
-65/150oC
EIA1718-1P
EIB1718-1P
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EIA1414-8P
Abstract: No abstract text available
Text: Excelics EIA1414-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.0-14.5GHz, 8W Internally Matched Power FET • • • • • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 25% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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EIA1414-8P
39dBm
6240mA
720mA
120mA
38dBm
175oC
150oC
-65/150oC
EIA1414-8P
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EIA1718-2P
Abstract: EIB1718-2P
Text: Excelics EIA/EIB1718-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1718-2P
46dBm
EIA1718-2P
180mA
32dBm
175oC
150oC
-65/175oC
-65/150oC
45dBc
EIA1718-2P
EIB1718-2P
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Untitled
Abstract: No abstract text available
Text: Excelics EIA1415B-8P Not recommended for new designs. Contact factory. Effective 03/2003 14.9-15.1GHz, 8W Internally Matched Power FET • • • • • 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE 20% TYPICAL +39dBm TYPICAL P1dB OUTPUT POWER
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39dBm
EIA1415B-8P
EIA1415B-8P
720mA
38dBm
175oC
-65/175oC
6240mA
120mA
150oC
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EIA1818-1P
Abstract: EIB1818-1P
Text: Excelics EIA/EIB1818-1P Not recommended for new designs. Contact factory. Effective 03/2003 18.15-18.75GHz, 1W Internally Matched Power FET • • • • • • 18.15-18.75GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL
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EIA/EIB1818-1P
75GHz,
75GHz
43dBm
EIA1818-1P
75GHz
32dBm
175oC
150oC
EIA1818-1P
EIB1818-1P
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