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    722GS33 Search Results

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    722GS33 Price and Stock

    JRH Electronics HMTSW-217-22-G-S-330-RA

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    DigiKey HMTSW-217-22-G-S-330-RA Bulk 1
    • 1 $8.95
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    • 100 $7.1455
    • 1000 $5.5091
    • 10000 $5.5091
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    Samtec Inc HMTSW-217-22-G-S-330-RA

    CONN HEADER R/A 17POS 5.08MM
    Free Sample
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    DigiKey HMTSW-217-22-G-S-330-RA Bulk 1
    • 1 $5.21
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    Avnet Americas HMTSW-217-22-G-S-330-RA Bulk 1
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    Mouser Electronics HMTSW-217-22-G-S-330-RA
    • 1 $3.59
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    • 100 $3.15
    • 1000 $2.49
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    Newark HMTSW-217-22-G-S-330-RA Bulk 67 1
    • 1 $7.37
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    • 100 $5.4
    • 1000 $2.91
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    Master Electronics HMTSW-217-22-G-S-330-RA
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    • 100 $4.37
    • 1000 $2.88
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    Sager HMTSW-217-22-G-S-330-RA 67 1
    • 1 $3.59
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    • 1000 $2.49
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    Samtec Inc MTSW-107-22-G-S-330-RA

    Conn Unshrouded HDR 7 POS 2.54mm Solder RA Through Hole - Bulk (Alt: MTSW-107-22-G-S-33)
    Free Sample
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    Avnet Americas MTSW-107-22-G-S-330-RA Bulk 1
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    Sager MTSW-107-22-G-S-330-RA
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    722GS33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VN10LF

    Abstract: scr 209
    Text: PLESSEY SE NI COND /D IS CR ET E 03_ ~ N-channel enhancement mode vertical D M O S FET r-z7-z.r VN10LF A B S O L U T E M A X IM U M R A T IN G S Parameter Sym bol Drain-source voltage I>e J|722GS33 □ □Üti75ti 7 ' SO T -2 3 60 V ds Unit V Continuous drain current at TA = 25°C


    OCR Scan     		PDF 722GS33 ti75ti VN10LF 7EE0S33 VN10LF scr 209

    ZVP2210

    Abstract: ZVP2210L
    Text: ^5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE P-channel enhancement mode vertical D M O S FET » F | 7 a a O S 3 3 DDOSflDT h | ~ 95D 05809 D T-37-25 ZVP2210 FEATURES • Com pact geometry • Fast switching speeds • N o secondary breakdown


    OCR Scan     		PDF ZVP2210 T-37-25 ZVP2210B* ZVP2210L G-315 722GS33 G-316 ZVP2210 ZVP2210L

    BSS65

    Abstract: BSS65R
    Text: PLXSSEY SEMICOND/DISCRETE 03 PNP silicon planar high speed switching transistor DE I 722DS33 ODOLbSH 4 BSS65 , T - 3 7 -// A B S O L U T E M A X I M U M R A T IN G S Param eter Sy m b o l BSS65 U nit V CBO -1 2 V C o lle cto r-E m itte r V o lta g e V CEO


    OCR Scan     		PDF 722DS33 BSS65 BSS65 722GS33 BSS65R BSS65R

    0535t

    Abstract: No abstract text available
    Text: D e ' | ? E 20533 ODGSbSS 7 PLESSEY S E M C O N D / D I S C R E T E 7220533 PLESSEY SEMICOND/DISCRETE 95D 0 5 6 2 5 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geom etry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF G-131 G-132 G-133 7SSDS33 G-134 0535t

    75E0533

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ D IS C R E T E N-channel enhancement mode vertical DMOS FET DE 1 7 S 2 D S B 3 GOOSSaT S f 95D T 05509 D -3S-2S BS107PT FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown


    OCR Scan     		PDF BS107PT DDDSS1495D 75E0533