Untitled
Abstract: No abstract text available
Text: FDMS36101L_F085 N-Channel Power Trench MOSFET 100V, 38A, 26mΩ Features Typ rDS on = 18mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control
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FDMS36101L
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SFH054
Abstract: 10VGS TL 0621 P
Text: PRELIMINARY SFH054 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)
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SFH054
160pF)
battH054
O-247
SFH054
10VGS
TL 0621 P
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SFP70N06
Abstract: No abstract text available
Text: SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■
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SFP70N06
160pF)
O-220
SFP70N06
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •
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FQAF15N70
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Untitled
Abstract: No abstract text available
Text: SCS120KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible
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SCS120KG
O-220AC
R1102S
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA15N70 FEATURES BVDSS = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. • Extended Safe Operating Area
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FQA15N70
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2 input and gate 24v
Abstract: gate drive protection smd transistor 26 2SK3575 2SK35
Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3575 TO-263 Unit: mm +0.1 1.27-0.1 Features 4.5V drive available. +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 70nC TYP. VDD = 24 V, VGS = 10 V, ID = 83 A Built-in gate protection diode
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2SK3575
O-263
2 input and gate 24v
gate drive protection
smd transistor 26
2SK3575
2SK35
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Untitled
Abstract: No abstract text available
Text: SCS120KG SiC Schottky Barrier Diode Datasheet lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS120KG
O-220AC
R1102B
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SFP70N06
Abstract: No abstract text available
Text: PRELIMINARY SFP70N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.014Ω )@VGS=10V ■ Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)
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SFP70N06
160pF)
O-220
SFP70N06
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smart charge alternator
Abstract: No abstract text available
Text: FDBL86210_F085 N-Channel Power Trench MOSFET 150V, 169A, 6.3mΩ Features Typ rDS on = 5mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 70nC at VGS = 10V, ID = 80A D UIS Capability RoHS Compliant Qualified to AEC Q101 Applications G Automotive Engine Control
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FDBL86210
smart charge alternator
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MARKING 30 ROHM
Abstract: SCS120KG
Text: SCS120KG Datasheet SiC Schottky Barrier Diode lOutline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)
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SCS120KG
O-220AC
R1102B
MARKING 30 ROHM
SCS120KG
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max31826
Abstract: MAX31826MUA Microcontroller Cross-Reference Q05n 260NC
Text: 19-6264; Rev 0; 3/12 MAX31826 1-Wire Digital Temperature Sensor with 1Kb Lockable EEPROM General Description The MAX31826 digital thermometer provides 12-bit temperature measurements and communicates over a 1-WireM bus that by definition requires only one data line
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MAX31826
12-bit
-55NC
125NC
-10NC
64-bit
MAX31826MUA
Microcontroller Cross-Reference
Q05n
260NC
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max5986
Abstract: vwad MAX5987AETE T1655
Text: 19-6261; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX5986A/MAX5987A IEEE 802.3af-Compliant, High-Efficiency, Class 1, Powered Devices with Integrated DC-DC Converter General Description The MAX5986A/MAX5987A provide a complete powersupply solution as IEEE 802.3af-compliant Class 1
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MAX5986A/MAX5987A
MAX5987A
MAX5986A
max5986
vwad
MAX5987AETE
T1655
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AIN97
Abstract: MAX11329
Text: EVALUATION KIT AVAILABLE MAX11329–MAX11332 3Msps, 12-/10-Bit, 8-/16-Channel ADCs with Post-Mux External Signal Conditioning Access General Description Benefits and Features The MAX11329–MAX11332 are 12-/10-bit with external reference and 500kHz, full-linear-bandwidth, high-speed,
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MAX11329
MAX11332
12-/10-Bit,
8-/16-Channel
12-/10-bit
500kHz,
AIN97
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light sensitive triggers
Abstract: MAX44004 lux meter calibration D622N photodiode CIE eye response photodiode application lux meter human eye
Text: 19-5997; Rev 0; 5/12 EVALUATION KIT AVAILABLE MAX44004 Digital Ambient Light Sensor General Description The MAX44004 is a wide dynamic range, lowpower ambient light sensor ALS ideal for many light sensing applications: tablets, displays, accessories, medical devices, and light management systems.
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MAX44004
D622N
light sensitive triggers
lux meter calibration
photodiode CIE eye response
photodiode application lux meter human eye
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92FA
Abstract: 15FV
Text: 19-6266; Rev 0; 4/12 EVALUATION KIT AVAILABLE MAX15104 Small 2A, Low-Dropout Linear Regulator in a 2.7mm x 1.6mm Package General Description Features The MAX15104 is a small, low-dropout linear regulator optimized for networking, datacom, and server applications. The regulator delivers up to 2A from a 1.7V to 5.5V
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MAX15104
150mV
92FA
15FV
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MAX97220
Abstract: MAX97220AETE T MAX97220A MAX97220BETE MAX97220BETE T
Text: 19-5611; Rev 2; 7/12 TION KIT EVALUA BLE IL AVA A Differential Input DirectDrive Line Drivers/Headphone Amplifiers DirectDrive Features The MAX97220_ is a differential input line driver/headphone amplifier. This device is capable of driving line level loads with 3VRMS into 1kI with a 5V
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125mW
18-Bit
112dB
MAX9722
MAX97220_
MAX97220E
MAX97220A
MAX97220E
MAX97220
MAX97220AETE T
MAX97220BETE
MAX97220BETE T
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Untitled
Abstract: No abstract text available
Text: DRAW ING MADE IN A M E R I C A N * PROJECTION 1ST I BY AMP INCORPORATED . ALL RIGHTS RESERVED. AMP PRODUCTS COVERED BY PATENTjS-AND 'OR PATENTS PENDING. 70NC CTR /Tn, A P P R O P R v A T E M I I . \ S S T A \ K P E D ONi i.n a A P / K i J O T / ? \ St/PSD 8 Y 2 C 5 4 S Î - Z % 9/.-’fc'-2.
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FQA15N70
Abstract: 700v 5A mosfet
Text: QFET N-CHANNEL FQA15N70 FEATURES BV qss = 700V Advanced New Design R DS ON Avalanche Rugged Technology = 0.56Î2 lD = 15A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)
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FQA15N70
FQA15N70
700v 5A mosfet
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •
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FQAF15N70
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700v 5A mosfet
Abstract: 700v 7.5A mosfet FQAF15N70 95A TO
Text: QFET N-CHANNEL FQAF15N70 FEATURES BV dss = 700V Advanced New Design R ds ON = 0.56Î2 Avalanche Rugged Technology lD = 9.5A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 70nC (Typ.)
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FQAF15N70
700v 5A mosfet
700v 7.5A mosfet
FQAF15N70
95A TO
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA15N70 FEATURES BV dss = 700V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 70nC Typ. •
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FQA15N70
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Applications Note U-137
Abstract: No abstract text available
Text: y UNITRODE UCC1776 UCC2776 UCC3776 PRELIMINARY Quad FET Driver FEATURES DESCRIPTION • High Peak Output Current Each Output - 1.5A Source, 2.0A Sink • W ide Operating Voltage Range 4.5V to 18V • Thermal Shutdown • CMOS Compatible Inputs • Outputs Are Active Low
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UCC1776
UCC2776
UCC3776
UCC3776
C3776
UC3879
Applications Note U-137
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Untitled
Abstract: No abstract text available
Text: UCC1776 UCC2776 UCC3776 UNITRODE Quad FET Driver PRELIMINARY FEATURES DESCRIPTION • High Peak Output Current Each Output - 1 .5A Source, 2.0A Sink The UCC3776 is a four output BCDMOS buffer/driver designed to drive highly capacitive loads such as power MOSFET gates at high speeds. The
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UCC1776
UCC2776
UCC3776
UCC3776
UC3879
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