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    3M Interconnect 7100005759

    Multi-Conductor Cables 14 COND SH/JCK 100' TWIST BEIGE 28AWG
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    TTI 7100005759 Spool 12 1
    • 1 $273.71
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    3M Interconnect 7100161613

    Multi-Conductor Cables 16 COND SH/JCK 100' TWIST BEIGE 28AWG
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    TTI 7100161613 Spool 1
    • 1 $376.17
    • 10 $331.92
    • 100 $311.05
    • 1000 $311.05
    • 10000 $311.05
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    3M Interconnect 7100161616

    Multi-Conductor Cables 26 COND SH/JCK 100' TWIST BEIGE 28AWG
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    TTI 7100161616 Spool 1
    • 1 $407.25
    • 10 $383.76
    • 100 $333.09
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    3M Interconnect 7000058085

    Multi-Conductor Cables 36 COND SH/JCK 300' TWIST BEIGE 28AWG
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    TTI 7000058085 Spool 5
    • 1 -
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    • 100 $1395.47
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    3M Interconnect 7000058086

    Multi-Conductor Cables 40 COND SH/JCK 300' DISCRETE WIRE CBL
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    TTI 7000058086 Spool 5
    • 1 -
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    • 100 $1424.65
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    700MBPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NT5DS4M32EF-25

    Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
    Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.


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    PDF NT5DS4M32EF 4Mx32 128Mbit 32Bit 144-Ball 144-Balla NT5DS4M32EF-25 NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4

    SGMII PCIE bridge

    Abstract: Scatter-Gather direct memory access SG-DMA TN1084 lvds serdes project wishbone rev. b
    Text: f u l l y t e s t e d a n d i n t e r o p e r a b l e Lattice PCIe Solutions Ready-to-Use PCIe Portfolio Lattice provides designers with low cost, low power, programmable solutions that are ready-to-use right out of the box. A suite of tested and interoperable solutions is available for PCI Express,


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    PDF Interope/10b 1-800-LATTICE LatticeMico32, I0195C SGMII PCIE bridge Scatter-Gather direct memory access SG-DMA TN1084 lvds serdes project wishbone rev. b

    lx64ev-3f100c

    Abstract: LX64V-3F100C 3F100 5f208c LX64V-3FN100 LX64EB-5F100C LX128EV-5FN208I LX128EV-5FN208C LX64B-3FN100C LX64B-5F100C
    Text: ispGDX2 Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.


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    PDF LX64V LC64B LX64C LX128V LX128B LX128C LX256V LX256B LX64V-3F100C LX64V-3FN100C lx64ev-3f100c LX64V-3F100C 3F100 5f208c LX64V-3FN100 LX64EB-5F100C LX128EV-5FN208I LX128EV-5FN208C LX64B-3FN100C LX64B-5F100C

    HY5DU561622CTP

    Abstract: No abstract text available
    Text: HY5DU561622CTP 256M 16Mx16 DDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY5DU561622CTP 16Mx16) HY5DU561622CTP 456-bit 400mil 66pin

    HY5DS283222BF

    Abstract: HY5DS283222BFP-33
    Text: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY5DS283222BF 4Mx32) 1HY5DS283222BF 350Mhz HY5DS283222 728-bit 144ball HY5DS283222BFP-33

    Untitled

    Abstract: No abstract text available
    Text: Target Spec 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 0.2 January 2003 Samsung Electronics reserves the right to change products or specification without notice.


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    PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GC2A K4D263238E-GC33 K4D263238E-GC36 K4D263238E-GC40

    c485

    Abstract: No abstract text available
    Text: 19-3557; Rev 0; 2/05 27-Bit, 3MHz-to-35MHz DC-Balanced LVDS Deserializer The MAX9218 digital video serial-to-parallel converter deserializes a total of 27 bits during data and control phases. In the data phase, the LVDS serial input is converted to 18 bits of parallel video data and in the control


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    PDF 27-Bit, 3MHz-to-35MHz MAX9218 MAX9217 T4866-1 c485

    Untitled

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4N56163QG 256Mbit

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4J55323QG 256Mbit

    K4D263238G-VC33

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D263238G-GC 128Mbit GDDR SDRAM 1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.7 February 2005 Samsung Electronics reserves the right to change products or specification without notice.


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    PDF K4D263238G-GC 128Mbit 32Bit 144-Ball 200MHz/ 166MHz K4D263238G-VC2A K4D263238G-VC33. K4D263238G-VC33

    tsop-ii 66 JEDEC TRAY

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM Revision 1.5 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K4D261638F 128Mbit 183MHz 166MHz tsop-ii 66 JEDEC TRAY

    Untitled

    Abstract: No abstract text available
    Text: 128M DDR SDRAM K4D263238E-GC 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.2 April 2003 Samsung Electronics reserves the right to change products or specification without notice.


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    PDF K4D263238E-GC 128Mbit 32Bit 144-Ball K4D263238E-GL36 K4D263238E-GC25

    Untitled

    Abstract: No abstract text available
    Text: 128M GDDR SDRAM K4D261638F 128Mbit GDDR SDRAM 2M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.5 March 2005 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev 1.5 Mar. 2005 128M GDDR SDRAM


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    PDF K4D261638F 128Mbit 16Bit -TC25 K4D261638F-TC25/2A/33/36 K4D261638F-TC25 17tCK 18tCK

    MAX9217

    Abstract: MAX9218 MAX9218ECM MAX9218ETM
    Text: 19-3557; Rev 2; 10/05 27-Bit, 3MHz-to-35MHz DC-Balanced LVDS Deserializer The MAX9218 digital video serial-to-parallel converter deserializes a total of 27 bits during data and control phases. In the data phase, the LVDS serial input is converted to 18 bits of parallel video data and in the control


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    PDF 27-Bit, 3MHz-to-35MHz MAX9218 MAX9217 MAX9218ECM MAX9218ETM

    Untitled

    Abstract: No abstract text available
    Text: LOW-COST NON-VOLATILE INFINITELY RECONFIGURABLE PLD MachXO Family Crossover Programmable Logic Devices The MachXO family of non-volatile, infinitely reconfigurable Programmable Logic Devices PLDs is designed for applications traditionally implemented using


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    PDF 1-800-LATTICE I0176A

    Untitled

    Abstract: No abstract text available
    Text: ispGDX2 Family Includes High, Performance t os -C w Lo “E” Series July 2004 Features • High Performance Bus Switching Preliminary Data Sheet ■ Two Options Available • High bandwidth – Up to 12.8 Gbps SERDES – Up to 38 Gbps (without SERDES)


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    PDF 15x10) 360MHz LX128EV LX128EV-5F208I LX128EB LX128EB-5F208I LX128EC LX128EC-5F208I LX256EV LX256EV-5F484I

    DDR2-667

    Abstract: EBE25UC8AAFV-DF-E DDR2-700 ELPIDA DDR User
    Text: PRELIMINARY DATA SHEET 256MB Unbuffered DDR2 SDRAM HYPER DIMM EBE25UC8AAFV 32M words x 64 bits, 1 Rank Features The EBE25UC8AAFV is 32M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.


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    PDF 256MB EBE25UC8AAFV EBE25UC8AAFV E0527E12 DDR2-667 EBE25UC8AAFV-DF-E DDR2-700 ELPIDA DDR User

    Untitled

    Abstract: No abstract text available
    Text: HY5DU561622CTP 256M 16Mx16 GDDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY5DU561622CTP 16Mx16) HY5DU561622CTP 456-bit 400mil 66pin

    K4D26323RA-GC36

    Abstract: GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33
    Text: * VDD / VDDQ=2.8V * K4D26323RA-GC 128M DDR SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.5 December 2001 Samsung Electronics reserves the right to change products or specification without notice.


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    PDF K4D26323RA-GC 128Mbit 32Bit 144-Ball K4D263238A-GC33/40/45/50/55/60 K4D26323RA-GC36 K4D263238A-GC2A K4D26323RA-GC2A GC33 K4D263238A-GC33 K4D26323AA-GL K4D26323RA-GC K4D26323RA-GC2A K4D26323RA-GC33

    gddr5

    Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
    Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K4N51163QC-ZC 512Mbit gddr5 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36

    HY5DU573222AFM-25

    Abstract: HY5DU573222AFM HY5DU573222AFM-28 HY5DU573222AFM-33 HY5DU573222AFM-36
    Text: HY5DU573222AFM 256M 8Mx32 GDDR SDRAM HY5DU573222AFM This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY5DU573222AFM 8Mx32) HY5DU573222AFM-36 HY5DU573222AFM-28/33 HY5DU573222AFM-33/36/4 144ball 55Max HY5DU573222AFM-25 HY5DU573222AFM HY5DU573222AFM-28 HY5DU573222AFM-33

    Untitled

    Abstract: No abstract text available
    Text: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY5DW573222F 8Mx32) 500Mhz 450Mhz 144ball 55Max

    LX128EV-5FN208C

    Abstract: TN1003 759P
    Text: ispGDX2 Family Includes High, Performance t os -C w Lo “E-Series” September 2005 Features Data Sheet • Two Options Available • High-performance sysHSI standard part number • Low-cost, no sysHSI (“E-Series”) ■ High Performance Bus Switching


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    PDF 15x10) 360MHz LX128EC LX128EC-5FN208I LX256EV LX256EV-5FN484I LX256EB LX256EB-5FN484I LX256EC LX256EC-5FN484I LX128EV-5FN208C TN1003 759P

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan
    PDF 16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H