35 15 rail en 50022
Abstract: 70.4 L marking en 50022 ts 35
Text: Electronic housings WEB housing system housing system System advantages: • Open modules can be snapped together to any length • Complete custom design possible • The modular design enables quick assembly • High torsional rigidity due to the firm interconnection of the
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94-HB
94-V2
35 15 rail en 50022
70.4 L marking
en 50022 ts 35
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LCD-020N004A
Abstract: LCD CHARACTER CODE vishay 2 line LCD display LCD-020N004B
Text: LCD-020N004A, LCD-020N004B Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • MECHANICAL DATA ITEM Type: Character Display format: 20 x 4 characters Built-in controller: KS 0066 or equivalent Duty cycle: 1/16 5 x 8 dots includes cursor
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LCD-020N004A,
LCD-020N004B
LCD-020N004B
2002/95/EC
18-Jul-08
LCD-020N004A
LCD CHARACTER CODE vishay
2 line LCD display
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LCD-020N004A
Abstract: LCD-020N004B
Text: LCD-020N004A, LCD-020N004B Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • MECHANICAL DATA ITEM Type: Character Display format: 20 x 4 characters Built-in controller: KS 0066 or equivalent Duty cycle: 1/16 5 x 8 dots includes cursor
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LCD-020N004A,
LCD-020N004B
LCD-020N004B
2002/95/EC
11-Mar-11
LCD-020N004A
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554 CA3
Abstract: LC-XD1217P LC-XD1217PG LC-XD1217 LC-XD1217APG 70.4 L marking M511 ati 361 G104101 Discharge
Text: Individual Data Sheets LC-XD1217PG/APG* For standby power supplies. Expected trickle design life: 10 – 12 years at 20 °C according to Eurobat. VdS G104101 Dimensions mm M5 M5 11.8 11.8 12.5 12.5 12.5 M511 M5 M5 M5 Terminal type (option): 11.8 11 11 LC-XD1217PG:
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LC-XD1217PG/APG*
G104101
LC-XD1217PG:
LC-XD1217APG:
UL94HB)
554 CA3
LC-XD1217P
LC-XD1217PG
LC-XD1217
LC-XD1217APG
70.4 L marking
M511
ati 361
G104101
Discharge
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LCD-020N004A
Abstract: LCD-020N004B
Text: LCD-020N004A, LCD-020N004B www.vishay.com Vishay 20 x 4 Character LCD FEATURES • • • • • • • • • • • MECHANICAL DATA ABSOLUTE MAXIMUM RATINGS STANDARD VALUE 98.0 x 60.0 77.0 x 25.2 0.55 x 0.55 0.60 x 0.60 93.0 x 55.0 2.95 x 4.75 ITEM
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LCD-020N004A,
LCD-020N004B
LCD-020N004B:
LCD-020N004F:
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
LCD-020N004A
LCD-020N004B
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52-257-006-A
Abstract: 52-227-004 BARRIER TERMINAL if filter 38,9 marking AOO PCB terminal blocks 52-160-004-A
Text: Filtered Terminal Blocks Barrier Strip Filtered Terminal Blocks The barrier strip filtered terminal block is designed provide excellent EMI/RFI filtering of AC and DC power lines and control lines. This terminal block is available in various sizes, with terminal for soldering,
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E133076
52-257-006-A
52-227-004
BARRIER TERMINAL
if filter 38,9
marking AOO
PCB terminal blocks
52-160-004-A
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70.4 L marking
Abstract: 14N03 351 D-PAK
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD14N03R
r14525
NTD14N03R/D
70.4 L marking
14N03
351 D-PAK
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T14N03
Abstract: T14 N03 t14-n03 14n03 MOSFET n03
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD14N03R
NTD14N03R/D
T14N03
T14 N03
t14-n03
14n03
MOSFET n03
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N03G
Abstract: t14 N03G T14N03g 14N03 ON N03G t14-n03 Datasheets N03G 369D NTD14N03R NTD14N03R-001
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS on to Minimize Conduction Loss •ăLow Ciss to Minimize Driver Loss •ăLow Gate Charge •ăOptimized for High Side Switching Requirements in
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NTD14N03R
NTD14N03R/D
N03G
t14 N03G
T14N03g
14N03
ON N03G
t14-n03
Datasheets N03G
369D
NTD14N03R
NTD14N03R-001
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t14-n03
Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD14N03R
NTD14N03R/D
t14-n03
14n03
T14 N03
t14n03
369D
NTD14N03R
NTD14N03RG
NTD14N03RT4
NTD14N03RT4G
DSA0032463
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TL 2262
Abstract: SC 2262 2SC5998 SC-59A
Text: 2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ. • High gain and Excellent Efficiency Maximum Available Gain MAG = +22 dB typ. at VCE = 3.6 V, IC = 100 mA, f = 500 MHz
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2SC5998
REJ03G0169-0101
PLSP0003ZB-A
TL 2262
SC 2262
2SC5998
SC-59A
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Untitled
Abstract: No abstract text available
Text: Miniature Aluminum Electrolytic Capacitors NSR Series LEADED FEATURES • NEW GENERATION OF LOW PROFILE SIZING 5mm .200” HEIGHT • SPACE SAVING AT COMPETITIVE PRICING • TAPING FOR AUTOMATIC INSERTION AVAILABLE CHARACTERISTICS Rated Working Voltage Range
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120Hz)
50Vdc
-40oC~
120Hz
Z-20oC/Z
Z-40oC/Z
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t14n03
Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in
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NTD14N03R
NTD14N03R/D
t14n03
14n03
T14 N03
t14-n03
NTD14N03RT4
369D
NTD14N03R
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LCD-020M004A
Abstract: No abstract text available
Text: LCD-020M004A Vishay 20 x 4 Dots Character LCD FEATURES • 5 x 8 dots with cursor • Built-in controller KS 0066 or Equivalent • + 5V power supply (Also available for + 3V) • 1/16 duty cycle • B/L to be driven by pin 1, pin 2 or pin 15, pin 16 or A.K (LED)
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LCD-020M004A
18-Jul-08
LCD-020M004A
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v 817 y
Abstract: No abstract text available
Text: H ITACH I 2SC5218-Silicon NPN Epitaxial Transistor Application MPAK V HF & UHF wide band amplifier Features • High gain bandwidth product f j = 9 GHz typ. • High gain, low noise figure PG = 13.0 dB typ., NF = 1.2 dB typ. at f = 900 MHz W- Table 1 Absolute M axim um Ratings Ta = 25°C
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2SC5218------Silicon
2SC5218
SC-59A
v 817 y
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tb 1253 ang
Abstract: No abstract text available
Text: BFR90A Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure
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BFR90A
BFR90A
20-Jan-99
tb 1253 ang
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transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4
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BFS17/BFS17R
BFS17
BFS17R
26-Mar-97
transistor MAR 819
transistor MAR 543
sl2 357
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Untitled
Abstract: No abstract text available
Text: DSub 8350 Series Socket Connector, 50 Position • IDC com patible • Low er insertion/w ithdraw al force than other 50 position products • Available in either preassem bled or tw o piece covers • Available in either open or closed end cover • M ounting options include #4-40 UNC or m etric
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TS-0034-11
UL94V-0
QQ-N-290,
8350-X00X
3448-8D50
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bfr96s
Abstract: No abstract text available
Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q68000-A5689
bfr96s
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TRANSISTOR PEC 545
Abstract: No abstract text available
Text: BFR96T V IS HAY Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure
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BFR96T
BFR96T
BFR96T_
20-Jan-99
TRANSISTOR PEC 545
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BFR90 transistor
Abstract: BFR90 telefunken ha 680 BFR90 amplifier BFR90S
Text: Temic BFR90 Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR90 Marking: BFR90 Plastic case TO 50
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BFR90
BFR90
24-Mar-97
BFR90 transistor
telefunken ha 680
BFR90 amplifier
BFR90S
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ML 1557 b transistor
Abstract: lm 1766 ic LM 748
Text: TEMIC BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR90A
BFR90A
D-74025
31-Oct-97
ML 1557 b transistor
lm 1766
ic LM 748
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MAR 618 transistor
Abstract: MAR 641 TRANSISTOR bfr96ts MAR 527 transistor L 0403 817
Text: Temic BFR96TS Semiconductor i Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96TS Marking: BFR96TS Plastic case ~ TO 50
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BFR96TS
BFR96TS
26-Mar-97
MAR 618 transistor
MAR 641 TRANSISTOR
MAR 527 transistor
L 0403 817
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zo 107 NA P 611
Abstract: BFR96 L 0403 817 BFR96T
Text: TEMIC BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications RF-amplifier up to GHz range specially for wide band an tenna amplifier. Features • High power gain
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BFR96T
BFR96T
D-74025
31-Oct-97
zo 107 NA P 611
BFR96
L 0403 817
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