Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    6V 33 DIODE Search Results

    6V 33 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    6V 33 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mevc

    Abstract: 080L
    Text: SENSITRON SEMICONDUCTOR SAF27N10-080L TECHNICAL DATA DATA SHEET 4272, REV. D RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Single Event Effect Capability Equivalent to 33 MeV cm2/mg LET


    Original
    PDF SAF27N10-080L mevc 080L

    HI155G1S02X

    Abstract: HI155G1S14X HI155G1S07X
    Text: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability


    Original
    PDF lcc/1550-hi-series HI155G1S02X HI155G1S14X HI155G1S07X

    Untitled

    Abstract: No abstract text available
    Text: Laser Diodes High Intensity Pulsed Laser Diodes 1550 HI-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ High intensity output Low divergence 0.5 W/A efficiency Excellent temperature stability Hermetic and custom designed package High Reliability


    Original
    PDF

    6v 33 diode

    Abstract: LTC5507ES6 diode schottky A28 LT5503
    Text: LTC5507 100kHz to 1GHz RF Power Detector FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Power Range: –34dBm to 14dBm Ultra Wide Input Frequency Range: 100kHz to 1000MHz Buffered Output


    Original
    PDF LTC5507 100kHz 34dBm 14dBm 1000MHz LT5503 120MHz LT5506 500MHz 6v 33 diode LTC5507ES6 diode schottky A28 LT5503

    BATWING sop-16

    Abstract: micro choke 820 uH 140 mA TTWB-2-B RF2320
    Text: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description The RF2320 is a general purpose, low-cost, high-linearity


    Original
    PDF RF2320 RF2320 OP-16 1000MHz, BATWING sop-16 micro choke 820 uH 140 mA TTWB-2-B

    Untitled

    Abstract: No abstract text available
    Text: RF2320 LINEAR GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations Product Description


    Original
    PDF RF2320 RF2320 OP-16 1000MHz, 2500MHz.

    102N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 102N30P 102N30P

    Untitled

    Abstract: No abstract text available
    Text: MSTC160 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 160Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package


    Original
    PDF MSTC160 160Amp MSTC160-08 MSTC160-12 MSTC160-16 MSTC160-Rev0 MSCT160 VGD125 IGD125

    Untitled

    Abstract: No abstract text available
    Text: MSTC130 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 130Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package


    Original
    PDF MSTC130 130Amp MSTC130-08 MSTC130-12 MSTC130-16 MSCT130 VGD125 IGD125

    Untitled

    Abstract: No abstract text available
    Text: MSTC90 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 90Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package


    Original
    PDF MSTC90 90Amp MSTC90-08 MSTC90-12 MSTC90-16 MSCT90 VGD125 IGD125

    Untitled

    Abstract: No abstract text available
    Text: MSTC60 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 60Amp Applications „ „ „ „ Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7 „ „ „ 5 4 „ „ International standard package


    Original
    PDF MSTC60 60Amp MSTC60-08 MSTC60-12 MSTC60-16 MSCT60 VGD125 IGD125

    IXFN102N30P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original
    PDF 102N30P IXFN102N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFK120N25P IXFX120N25P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode = = ≤ ≤ 250V 120A Ω 24mΩ 200ns TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFK120N25P IXFX120N25P 200ns O-264 120N25P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFX 1871 VDSS ID25 RDS on N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr = = = < 250 V 120 A Ω 24 mΩ 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original
    PDF PLUS247

    VSSX1284

    Abstract: network resistor 15KV VSSX1284AT VSSX1284B
    Text: VSSX1284 Vishay Thin Film 25 Mil Pitch, IEEE 1284 Termination Network Resistor, Capacitor, Diode FEATURES • One sophisticated, integrated Thin Film technology solution • Up-graded IEEE 1284 parallel port termination, pull-up with Product is pictured larger than


    Original
    PDF VSSX1284 28-pin VSSX1284B VSSX1284A VSSX1284AT 01-Jun-01 VSSX1284 network resistor 15KV VSSX1284B

    Untitled

    Abstract: No abstract text available
    Text: MSTC90 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 90Amp Applications     Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7    5 4   International standard package


    Original
    PDF MSTC90 90Amp MSTC90-08 MSTC90-12 MSTC90-16 MSCT90 VGD125â IGD125â

    Untitled

    Abstract: No abstract text available
    Text: MSTC110 Thyristor/Diode Modules VRRM / VDRM 800 to 1600V ITAV 110Amp Applications     Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Circuit MSTC 1 2 3 Features 6 7    5 4   International standard package


    Original
    PDF MSTC110 110Amp MSTC110-08 MSTC110-12 MSTC110-16 MSCT110 VGD125â IGD125â

    XTR1N0400

    Abstract: No abstract text available
    Text: XTRM Series XTR1N0400 IE W HIGH-TEMPERATURE, 40V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 55V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0415: IF=320mA per diode. o XTR1N0450: IF=1150mA per diode.


    Original
    PDF XTR1N0400 XTR1N0415: 320mA XTR1N0450: 1150mA 725mV 715mV XTR1N0400

    ZMM55C6V2

    Abstract: ZMM55-C2V4 ZMM55-C2V7 ZMM55-C3V0 ZMM55-C3V3 ZMM55-C3V6 ZMM55-C3V9 ZMM55-C4V3 ZMM55-C4V7 ZMM55C-6V2
    Text: DATA SHEET ZMM55-C2V4 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.4 to 47 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation .063(1.6) MECHANICAL DATA .055(1.4)DIA. • Ideally Suited for Automated Assembly Processes


    Original
    PDF ZMM55-C2V4 MINI-MELF/LL-34 500mW MIL-STD-202, ZMM55-C47 ZMM55C6V2 ZMM55-C2V7 ZMM55-C3V0 ZMM55-C3V3 ZMM55-C3V6 ZMM55-C3V9 ZMM55-C4V3 ZMM55-C4V7 ZMM55C-6V2

    120N25P

    Abstract: PLUS247
    Text: PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 120 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFK 120N25P IXFX 120N25P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V


    Original
    PDF 120N25P 70oCoulombs 120N25P PLUS247

    diode zener 27c

    Abstract: 27c diode ZENER DIODE 27c
    Text: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit:inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)


    Original
    PDF BZD27C3V6P BZD27C75P OD-123FL OC/10 2002/95/EC IEC61249 diode zener 27c 27c diode ZENER DIODE 27c

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original
    PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    Untitled

    Abstract: No abstract text available
    Text: CA3310, CA3310A 33 h a r m 's CMOS, 10-Bit, A/D Converters with Internal Track and Hold August 1997 Features • Description CMOS Low Power Typ . 15mW • Single Supply Voltage. 3V to 6V


    OCR Scan
    PDF CA3310, CA3310A 10-Bit, IN914 D74HC

    Untitled

    Abstract: No abstract text available
    Text: NON-RELAMPABLE LED SOLID-STATE INDICATOR LIGHT s/16" DIA. MOUNTING HOLE SER IES 2191U FEATURES Solid-State Indicator Lights Com­ plete with Built-in-Current-Limiting Resistor and Rectifier Diode. Bezel: Polished stainless steel. For black finish, add “X” after series


    OCR Scan
    PDF 2191U 2191U1-12V 2191U5-12V 2191U7-12V 2191U1-24V 2191U5-2 32VAC 24VDC