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    6R199P MOSFET Search Results

    6R199P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    6R199P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6R199P DATA SHEET

    Abstract: ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P DATA SHEET ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag

    6R199P mosfet

    Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r

    6R199P mosfet

    Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet mosfet 6R199 IPL60R199CP Benchmark MOSFETs

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		PDF IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199

    6R199

    Abstract: Diode SMD SJ 99
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm 6R199 Diode SMD SJ 99

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast


    Original     		PDF IPL60R199CP 150mm²

    Untitled

    Abstract: No abstract text available
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P

    IPP60R199CP

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 32 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P IPP60R199CP

    6R199P

    Abstract: 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor
    Text: IPA60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220 6R199P 6R199P 6R199 6R199P mosfet IPA60R199CP JESD22 CoolMOS Power Transistor

    6R199P

    Abstract: 6R199 6R199P mosfet IPI60R199CP SP000103248 ISS 99 diode mosfet 6R199 6R199P DATA SHEET JESD22 6R19
    Text: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6R199P 6R199 6R199P mosfet IPI60R199CP SP000103248 ISS 99 diode mosfet 6R199 6R199P DATA SHEET JESD22 6R19

    6r199p

    Abstract: mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199
    Text: IPP60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6r199p mosfet 6R199 6R199P DATA SHEET IPP60R199CP JESD22 SP000084278 6R199

    6R199

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220 SP000084278 6R199P 6R199

    ISS 99 diode

    Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3-1 IPW60R199CP PG-TO247-3-1 SP000089802 6R199P ISS 99 diode 6R199P IPW60R199 6R19

    6R199P

    Abstract: IPA60R199CP 6R199P mosfet
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability PG-TO220FP • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220FP SP000094146 6R199P 6R199P IPA60R199CP 6R199P mosfet

    6R199P

    Abstract: to-263-3 smd transistor marking DF
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P to-263-3 smd transistor marking DF

    6R199P

    Abstract: 6R199P mosfet 6R199P+mosfet
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet

    ISS 99 diode

    Abstract: No abstract text available
    Text: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPP60R199CP PG-TO220-3-1 SP000084278 6R199P ISS 99 diode

    DF 331 TRANSISTOR

    Abstract: No abstract text available
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P DF 331 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 33 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPW60R199CP PG-TO247-3 SP000089802 6R199P

    6R199

    Abstract: 6R199P 6R199P mosfet 6R199P+mosfet
    Text: IPA60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220 6R199P 6R199 6R199P 6R199P mosfet 6R199P+mosfet

    6R199P

    Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
    Text: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPA60R199CP PG-TO220-3-31 SP000094146 6R199P 6R199P 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C

    6r199p

    Abstract: IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199
    Text: IPI60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6r199p IPI60R199CP JESD22 SP000103248 ISS 99 diode 6R199

    marking code ff p SMD Transistor

    Abstract: 6R199P
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPB60R199CP PG-TO263 SP000223256 6R199P marking code ff p SMD Transistor 6R199P

    6R199P mosfet

    Abstract: No abstract text available
    Text: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF IPI60R199CP PG-TO262 SP000103248 6R199P 6R199P mosfet