Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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6n60a
Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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6N60L
6N60G
QW-R502-117
6n60a
6n60b
6n60
MOSFET 6n60
power mosfet 6n60
6n60 data
6N60-B
6n60 equivalent
6N60L TO-220F
MOSFET+6n60
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6N-60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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6N60L
QW-R502-117
6N-60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220F
O-220
O-220F1
O-220F2
O-252
O-251
QW-R502-117
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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6N60-P
O-220F
O-220
6N60-P
O-220F1
O-220F2
O-263
O-251
O-252
QW-R502-969
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6n60a
Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-251
O-220F
O-220F1
QW-R502-117
6n60a
6n60b
6n60l
6n60
6N60G
6n60 data
6N60-B
6N60L TO-220F
6N60L TO-251
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-117.
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6n60c
Abstract: mosfet 6n60c 6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and
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6N60-C
6N60-C
6N60L-TF3-T
6N60G-TF3-T
O-220F
QW-R502-A50
6n60c
mosfet 6n60c
6n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-117.
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6n60a
Abstract: 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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6N60L
QW-R502-117
6n60a
6n60b
6N60-B
6n60
6N60-A
MOSFET 6n60
DSA0025594
6n60 MOSFEt
6n60 data
power mosfet 6n60
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220F
O-220
O-220F1
O-220F2
QW-R502-117
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6n60 data
Abstract: UTC6N60 6N60L TO-220F
Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-251
O-220
O-220F
O-220F1
O-252
QW-R502-117
6n60 data
UTC6N60
6N60L TO-220F
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transistor 6n60
Abstract: RX6N60 power mosfet 6n60
Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX6N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
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RX6N60
Tel086-28-85198496
Fax086-28-8519893
RX6N60]
RX6N60,
O-220AB,
00A/us,
transistor 6n60
RX6N60
power mosfet 6n60
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6N60
Abstract: 6n60 equivalent 6n60 data
Text: E 6N60 VDSS=600V; ID=6.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage
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100nA
6N60
6n60 equivalent
6n60 data
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transistor 6n60
Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
Text: HI-SINCERITY Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 MICROELECTRONICS CORP. H06N60 Series H06N60 Series Pin Assignment 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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MOS200402
H06N60
O-263
spee80
183oC
217oC
260oC
H06N60U,
H06N60E,
transistor 6n60
6N60
H06N60F
06N60
H06N60E
H06N60U
marking code 749
PB40
MOS200402
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transistor NEC K2500
Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales
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6N60
Abstract: ssp6n SSP6N60
Text: SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSP6N55/6N60
SSH6N55/6N60
SSP6N55
SSH6N55
6N60
ssp6n
SSP6N60
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SSP6N60
Abstract: 6N60 MOSFET 6n60
Text: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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SSP6N55/6N60
SSP6N55
SSP6N60
SSP6N60
SSP6N55/60
6N60
MOSFET 6n60
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6N60
Abstract: SSM6N55
Text: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times
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SSM6N55/6N60
SSM6N55
SSM6N60
6N60
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SSS6N60
Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Text: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re
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SSS6N55/6N60
O-270*
SSS6N5S6N60
SSS6N55
SSS6N60
SSSSN55
SSSSM60
Tc-25-C
Tc-25
ADE 443 TI
MOSFET 6n60
6n60
K300
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6n55
Abstract: power mosfet 6n60 TH6N55 6n55 data
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 55 M T H 6 N 60 M TM 6N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,
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6n60a
Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTP6N60
IXTM6N60
IXTP6N60,
Drain-Sour420
O-204
O-220
O-247
6n60a
6n60
600 volt n channel power mosfet
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IRF 850 mosfet
Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Text: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF
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O-220
IR9523
IRF9522
IRF9513
IRF9511
IRF9512
IRF9510
IRF9623
IRF9621
IRF9622
IRF 850 mosfet
MOSFET IRF 635
MOSFET IRF 630
MOSFET IRF 713
IRF N-Channel Power MOSFETs
IRF 740 N
IRF 840 MOSFET
IRF 450 MOSFET
P Channel Power MOSFET IRF
irf 540 mosfet
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P6N60
Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,
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MTP6N55
P6N60
p6n55
tp6n55
6N55
TP6N60
SITH
6n55 data
MTP6N6
power mosfet 6n60
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