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    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI I HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |im Process (Leff= 0.6 |im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		PDF HX6356 1x106rad 1x101 36-Lead 4551fl72 6G638