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    6A, 100V FAST RECOVERY DIODE Search Results

    6A, 100V FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    6A, 100V FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K02N120

    Abstract: No abstract text available
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


    Original     		PDF SKB02N120 40lower P-TO-263-3-2 O-263AB) SKB02N120 K02N120 K02N120

    K02N120

    Abstract: fast recovery diode 2a trr 200ns
    Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


    Original     		PDF SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120 fast recovery diode 2a trr 200ns

    K02N120

    Abstract: No abstract text available
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation  Short circuit withstand time – 10 s


    Original     		PDF SKB02N120 PG-TO-263-3-2 K02N120

    Untitled

    Abstract: No abstract text available
    Text: 1N3879 R THRU 1N3883(R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-400 Volts Types Up to 400V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175


    Original     		PDF 1N3879 1N3883 1N3880 1N3881 1N3882 1N387

    Untitled

    Abstract: No abstract text available
    Text: FR6A R 02 THRU FR6J(R)02 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-600 Volts Types Up to 600V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175


    Original     		PDF 450us

    K02N120

    Abstract: fast recovery diode 1a trr 200ns
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKB02N120 P-TO-220-3-45 SKB02N120 K02N120 fast recovery diode 1a trr 200ns

    K02N120

    Abstract: k02n12 SKP02N120
    Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


    Original     		PDF SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120 k02n12

    Untitled

    Abstract: No abstract text available
    Text: FR6A R 05 THRU FR6M(R)05 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-1000 Volts Types Up to 1000V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175


    Original     		PDF 450us

    SKP02N120

    Abstract: 15v 60w smps smps 10w 5V SKB02N120
    Text: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter


    Original     		PDF SKP02N120 SKB02N120 O-220AB Q67040-S4278 O-263AB Q67040-S4279 Mar-00 SKP02N120 15v 60w smps smps 10w 5V SKB02N120

    Q67040-S4279

    Abstract: FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120
    Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		PDF SKP02N120 SKB02N120 40lower P-TO-220-3-1 O-220AB) P-TO-263-3-2 O-263AB) O-220AB Q67040-S4278 Q67040-S4279 FAST RECOVERY DIODE 200ns SKB02N120 FAST RECOVERY DIODE 200ns 2a 15v 60w smps SKP02N120

    k02n120

    Abstract: PG-TO-263-3-2 SKB02N120 k02n12
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,


    Original     		PDF SKB02N120 PG-TO-263-3-2 k02n120 PG-TO-263-3-2 SKB02N120 k02n12

    Untitled

    Abstract: No abstract text available
    Text: SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		PDF SKP02N120 SKB02N120 SKB02N120 O-220AB O-263AB Q67040-S4278 Q67040-S4279 Jan-02

    K02N120

    Abstract: No abstract text available
    Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs


    Original     		PDF SKP02N120 40lower PG-TO-220-3-1 O-220AB) SKP02N120 K02N120

    Untitled

    Abstract: No abstract text available
    Text: SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation  Short circuit withstand time – 10 s


    Original     		PDF SKP02N120 40lower PG-TO-220-3-1 O-220AB)

    1200V

    Abstract: P-TO220-3-45 K02N120
    Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:


    Original     		PDF SKB02N120 P-TO-220-3-45 SKB02N120 1200V P-TO220-3-45 K02N120

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Q67040-S4340

    Abstract: SKA06N60
    Text: SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Aug-00 Q67040-S4340 SKA06N60

    FAST RECOVERY DIODE 200ns 8A 40V

    Abstract: 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode
    Text: Preliminary SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls


    Original     		PDF SKA06N60 O-220, O-220-3-31 Q67040-S4340 Apr-00 FAST RECOVERY DIODE 200ns 8A 40V 6A, 100v fast recovery diode Q67040-S4340 SKA06N60 200v 1.5v 3a diode 400v 3a low vf diode

    Harris 721

    Abstract: RURM1610CC RURM1615CC RURM1620CC
    Text: HA RR IS S E M I C Q N D S E C T O R HARRIS S E M I C O N D U C T O R bflE D 4 3 Ü2 27 1 QOJaOHflQ STS • H A S RURM1610CC RURM1615CC, RURM1620CC 16A ,100V - 200V Ultrafast Dual Diodes December 1993 Package Features • ■ JEDEC T 0 -2 0 4 A A BOTTOM VIEW


    OCR Scan     		PDF RURM1610CC RURM1615CC, RURM1620CC O-204AA 100kHz RURM1610CC, RURM1620CC Harris 721 RURM1610CC RURM1615CC

    1BH62

    Abstract: IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62
    Text: p p 9097250 Q 1 » TOSHIBA | N' \ v ^ DDDHEm <DI S C R E TE /O P TO f STANDARD RECTIFIERS _ M D T -O f- 0 / 39C 0 2 2 1 4 p .io ~ p .24_ ~ _ Average Forward Current —» Peak Reverse Voltage 1A 1.2A 1.5A 100V S5277B 1S1885


    OCR Scan     		PDF S5277B 1S1885 1BZ61 S5277D 1S1886 1DZ61 S5277G 1S1887 1GZ61 S5277J 1BH62 IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62

    UES1303

    Abstract: UESI301 6A, 100v fast recovery diode
    Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 High Efficiency, 3.5A DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. FEATURES


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 UES1303 BYV28-50 BYV28-100 UESI301 6A, 100v fast recovery diode

    IC 7805

    Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
    Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)


    OCR Scan     		PDF 1N4001 1N4007 0V-1000V) 1N5391 1N5399 1N5400 1N5408 S6A05 IC 7805 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912

    Untitled

    Abstract: No abstract text available
    Text: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 UES1301

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 UES1301