smd diode marking code t056
Abstract: xf075 xf017 tyco igbt module 25A Thermistor PTC 265V* xf017 XF090 raychem* XF090 xf065 PolySwitch Resettable Devices xf250 PTC XF010
Text: Circuit Protection Business Unit Headquarters 308 Constitution Drive, Building H Menlo Park, CA USA 94025-1164 Tel : 800 227-7040, (650) 361-6900 Fax : (650) 361-4600 www.circuitprotection.com www.circuitprotection.com.hk (Chinese) www.tycoelectronics.com/japan/raychem (Japanese)
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886-2-876ose
RCP0060E
smd diode marking code t056
xf075
xf017
tyco igbt module 25A
Thermistor PTC 265V* xf017
XF090
raychem* XF090
xf065
PolySwitch Resettable Devices xf250
PTC XF010
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1262-33
Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.
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5V-100V)
O-247
PLUS220
ISOPLUS220TM
PLUS220SMD
O-252
O-220
O-263
1262-33
IXTP44N10T
IXTH200N10T
ixtp76n075
IXTA60N10T
IXTQ130N10T
IXTP98N075T
IXTP130N10T
IXTP240N055T
IXTP64N055T
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Untitled
Abstract: No abstract text available
Text: PRODUCT DETAIL Part Num: IXTC180N10T Description: POWER DEVICES > DISCRETE MOSFETs > N-Channel: Trench-Gate Power MOSFETs > 55V to 280V Trench MOSFETs Configuration: Single Package Style: ISOPLUS220 Status: Phase out/Obsolete: Contact the factory for availability and last time buys.
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IXTC180N10T
ISOPLUS220â
OPLUS220â
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Abstract: No abstract text available
Text: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: [email protected] www.comus.be Features Switching Direct Output MOS-FET Input DC Applications Resistive, capacitive and inductive DC loads
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Untitled
Abstract: No abstract text available
Text: Solid State Relays Datasheet WG F8 Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: [email protected] www.comus.be Features Switching Direct Output MOS-FET Input DC Applications Resistive, capacitive and inductive DC loads
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f400d
Abstract: diode wg mosfet wit frequency range WG s 35 comus wg f 100 d 15 wg 8 s
Text: Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: [email protected] www.comus.be Features Switching Random Output MOS-FET Input DC Applications Resistive and Inductive DC loads
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Untitled
Abstract: No abstract text available
Text: Solid State Relays Datasheet WG F Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: [email protected] www.comus.be Features Switching Random Output MOS-FET Input DC Applications Resistive and Inductive DC loads
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FS70UM-2
Abstract: QJD0142002 "dual MOSFET Module" "MOSFET Module"
Text: QJD0142002 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting
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QJD0142002
FS70UM-2
QJD0142002
"dual MOSFET Module"
"MOSFET Module"
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"MOSFET Module"
Abstract: "dual MOSFET Module" 6900 mosfet FS70UMJ-2 QJD0142003
Text: QJD0142003 Powerex Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual Power MOSFET Module 100 Volts 420 Amperes Description: Powerex Dual Mosfet Module designed specially for customer applications. Features: • • • • • • • Isolated Mounting
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QJD0142003
FS70UMJ-2
"MOSFET Module"
"dual MOSFET Module"
6900 mosfet
QJD0142003
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P channel MOSFET 50A
Abstract: MOSFET 450 FS100VSJ-02A
Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS100VSJ-02A FS100VSJ-02A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS100VSJ-02A
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FS100VSJ-02A
P channel MOSFET 50A
MOSFET 450
FS100VSJ-02A
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APT50M40
Abstract: No abstract text available
Text: PRODUCTS - Low Loss Power MOSFETs POWER MOS 7TMP W Low Loss MOSFETs E N WITH ALL THE BENEFITS OF POWER MOS V .PLUS Low Gate Charge Low Capacitances Low Loss Conduction & Switching Faster Switching / Lower Switching Losses . The lower capacitances combined with the
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APT10092HLL
APT10088HLL
APT5020HLL
APT5018HLL
APT5016HLL
APT20M40HLL
APT20M38HLL
APT10092ALL
APT5020ALL
APT5018ALL
APT50M40
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchTM Power MOSFET Common-Gate Pair IXTL2x180N10T VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions
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IXTL2x180N10T
2x100A
338B2
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Si7156DP
Abstract: S-80731
Text: SPICE Device Model Si7156DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7156DP
18-Jul-08
S-80731
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTL2x18010T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions
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IXTL2x18010T
2x100A
338B2
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTL2x180N10T TrenchTM Power MOSFET Common-Gate Pair VDSS ID25 = = RDS on ≤ 100V 2x100A Ω 9mΩ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions
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IXTL2x180N10T
2x100A
338B2
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offline UPS
Abstract: MOSFET 923 54 IXTL2x180N10T
Text: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair IXTL2x180N10T D VDSS = 100 V ID25 = 2x100 A Ω RDS on ≤ 7.4 mΩ D (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG S RG ISOPLUS i5-PakTM (IXTL) G S
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IXTL2x180N10T
2x100
405B2
offline UPS
MOSFET 923 54
IXTL2x180N10T
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFK 60N55Q2 IXFX 60N55Q2 Q-Class = = = trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions Maximum Ratings
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60N55Q2
247TM9
728B1
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SiR494DP
Abstract: No abstract text available
Text: SPICE Device Model SiR494DP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR494DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: AP30N30WI Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Simple Drive Requirement Lower On-resistance 250V RDS ON 68m ID G RoHS Compliant BVDSS 30A S Description AP30N30 from APEC provide the designer with the best combination
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AP30N30WI
AP30N30
100ms
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Untitled
Abstract: No abstract text available
Text: AP85T10AGI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic 100V RDS ON 8m ID G RoHS Compliant & Halogen-Free BVDSS 50A S Description
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AP85T10AGI-HF
O-220CFM
commercialindu00
100us
100ms
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AP30N30W
Abstract: No abstract text available
Text: AP30N30W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Simple Drive Requirement ▼ Lower On-resistance 250V RDS ON 68mΩ ID G ▼ RoHS Compliant BVDSS 36A S Description AP30N30 from APEC provide the designer with the best combination of fast
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AP30N30W
AP30N30
O-220
100us
100ms
AP30N30W
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POWER MOSFET 4600
Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X
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1XFD76N07-7X
IXFD180N07-9X
IXFD340N07-9Y
IXFD67N10-7X
XFD75N10-7X
IXFD75N10Q-7X
XFD80N100-8X
XFD170N10-9X
XFD230N10-9Y
IXFD70N15-7X
POWER MOSFET 4600
MOSFET 4600
4600 mosfet
IXFD80N20Q-8X
IXFD40N30-7X
IXFX90N20Q
1219X
IXFN80N50
IXFn44N80
IXFN39N90
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0-007Q
Abstract: sml10m07jvr
Text: Illl Vrr r = mi SML10M07JVR SEME LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 100V 225A 0.007Q Faster Switching
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SML10M07JVR
OT-227
0-007Q
sml10m07jvr
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Untitled
Abstract: No abstract text available
Text: ADVAN CED P o w er Te c h n o l o g y APT10M07JVR 100V ' 225A 0.007a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT10M07JVR
OT-227
APT10M07JVR
142uH,
OT-227
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