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    Aker Technology Company Ltd S73303T-65.536-X-R

    OSC 65.536MHZ 3.3V CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S73303T-65.536-X-R Digi-Reel 981 1
    • 1 $1.43
    • 10 $1.23
    • 100 $1.061
    • 1000 $0.95764
    • 10000 $0.95764
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    S73303T-65.536-X-R Cut Tape 981 1
    • 1 $1.43
    • 10 $1.23
    • 100 $1.061
    • 1000 $0.95764
    • 10000 $0.95764
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    S73303T-65.536-X-R Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.91644
    • 10000 $0.79252
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    SiTime Corporation SiT8103AC-22-33E-65.53600X

    Standard Clock Oscillators -20 to 70C, 3225, 25ppm, 3.3V, 65.536MHz, OE, 250 pcs T&R 12/16 mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SiT8103AC-22-33E-65.53600X
    • 1 -
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    • 100 -
    • 1000 $4.7
    • 10000 $4.7
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    SiTime Corporation SiT3907AC-22-33NH-65.536000X

    Specialty Oscillators -20 to 70C, 3225, 25ppm, 3.3V, 65.536MHz, 200 PPM PR, 250 pcs T&R 12/16 mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SiT3907AC-22-33NH-65.536000X
    • 1 -
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    • 1000 $6.39
    • 10000 $6.39
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    65536X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29F100T

    Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/21/1999 JUN/14/2001 29F100T 1 MEGA OHM RESISTOR MX29F100T 29f100

    CY7C1298A

    Abstract: GVT7164C18
    Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry


    Original     		PDF CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18

    MX29F100T

    Abstract: No abstract text available
    Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte FEB/04/1999 PM0548 MX29F100T

    29F100T

    Abstract: No abstract text available
    Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0548 29F100T

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte CompatiPM0548 DEC/21/1999

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80ms-- 80us--

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/14/2001 NOV/12/2001

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte single-pow003 PM0548

    CY7C1298A

    Abstract: GVT7164C18
    Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry


    Original     		PDF CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18

    Untitled

    Abstract: No abstract text available
    Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz


    Original     		PDF MX29F100T/B 128Kx8/64Kx16] 131072x8/ 65536x16 55/70/90/120ns 16K-Bytex1, 32K-Bytex1, 64K-Byte 80us-- 100us

    CY7C1298A

    Abstract: GVT7164C18
    Text: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry


    Original     		PDF CY7C1298A/ GVT7164C18 CY7C1298A/GVT7164C18 65536x18 CY7C1315A CY7C1298A CY7C1298A GVT7164C18

    VS1003

    Abstract: No abstract text available
    Text: VS1003 VS1003 - MP3/WMA AUDIO CODEC Features Description • Decodes MPEG 1 & 2 audio layer III CBR +VBR +ABR ; WMA 4.0/4.1/7/8/9 all profiles (5-384kbit/s); WAV (PCM + IMA ADPCM); General MIDI / SP-MIDI files • Encodes IMA ADPCM from microphone or line input


    Original     		PDF VS1003 VS1003 5-384kbit/s) FI-33720

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF 16-BIT M16C/29 REJ09B0101-0112

    Untitled

    Abstract: No abstract text available
    Text: STR71xFxx STR710RZ ARM7TDMI 32-bit MCU with Flash, USB, CAN, 5 timers, ADC, 10 communication interfaces Features • ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory


    Original     		PDF STR71xFxx STR710RZ 32-bit LQFP64

    24512A

    Abstract: No abstract text available
    Text: W24512A W in b o n d - - ; ^ ^ y 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x 8 bits that operates on a single 5-volt power supply. This device Is manufactured using Winbond’s high performance CMOS


    OCR Scan     		PDF W24512A W24512A 65536x 500mW 32-pin 400mil 300mil A0-A15 24512A

    16PIN

    Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
    Text: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY


    OCR Scan     		PDF 65536x1) 16PIN 51CB4H-10 51C64H-12 51C64H-8 51CB4HL-1D HY5164-15 V51C64-10 V51C64-12 V51C64-15 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si)


    OCR Scan     		PDF ma9287 65536x1 MA9287 65536x1 MA9287_

    65536X8

    Abstract: No abstract text available
    Text: jm i « im W23512 Winbond /iTTTTX 64K X 8 MASK ROM DESCRIPTION FEATURES The W23512 i s a • Power Consumption : High Speed Mask-Programm­ A c tiv e : 150mW T y p . a b le Read-Only Memory O rganized as 65536X Standby : 25mW(Typ.) 8 B it s and •A c c e s s Time : 200/250 ns (Max.)


    OCR Scan     		PDF 150mW W23512 65536X B-1930 65536X8

    61256P

    Abstract: 61256F HN61256 HN61256P H*61256
    Text: HN61256P, HN612S6FP 327 6 8 x 8-bit or 655 3 6 x 4-bit CMOS Mask Programmable Read Only Memory The Hitachi HN61256P/FP is a mask programmable 32768 x 8 -b it or 65536x4-bit CMOS read only memory. It operates from a single power supply and is compatible w ith T T L . Low power consumption


    OCR Scan     		PDF HN61256P, HN612S6FP HN61256P/FP 65536x4-bit IS2074® 61256P 61256F HN61256 HN61256P H*61256

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)


    OCR Scan     		PDF ma9187 65536x1 S10309PDS MA9187 65536x1 Cobalt-60

    x7ta

    Abstract: No abstract text available
    Text: fTÍTrK Winbond 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x8 bits that operates on a single 5-volt pow er supply. This device is manufactured using W inbond’s high performance CMOS


    OCR Scan     		PDF W24512A 65536x8 500mW 32-pin 400mil 300mil W24512A W24512AK-15 W24512AK-20 W24512AJ-15 x7ta

    AX 1668 F 24 pin

    Abstract: No abstract text available
    Text: SMJ27C512 65536 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS019D - SEPTEMBER 1987 - REVISED OCTOBER 1997 Organization . . . 65536 by 8 Bits J PACKAG E High-Reiiabiiity MIL-PRF-38535 Processing T O P V IE W Single 5-V Power Supply A15[ Pin-Compatible With Existing 512K


    OCR Scan     		PDF SMJ27C512 SGMS019D MIL-PRF-38535 27C512-15 27C512-20 27C512-25 27C512-30 AX 1668 F 24 pin

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


    OCR Scan     		PDF