HY51V65403
Abstract: HY51V65403HG Hyundai Semiconductor dram HY51V 65403HG
Text: HY51V S 65403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal
|
Original
|
PDF
|
HY51V
65403HG/HGL
64Mbit
400mil
32pin
HY51V65403
HY51V65403HG
Hyundai Semiconductor dram
HY51V 65403HG
|
k2835
Abstract: HY51VS
Text: HY51V S 65403HG(HGL) 16Mx4, 3.3V, 4K Ref, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera
|
OCR Scan
|
PDF
|
HY51V
65403HG
16Mx4,
64Mbit
100us.
65403H
400mil
32pin
I400mii
k2835
HY51VS
|
Untitled
Abstract: No abstract text available
Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns
|
OCR Scan
|
PDF
|
8Mx72
7738280CTG
A6V8730E18H
71V65800Cx9
HY51V
65803HG
71V64403C
71V65403C
65403HG
|
edo ram 4Mx16
Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP
|
OCR Scan
|
PDF
|
16M-bit
16400C
17400C
16403C
17403C
16400HG
edo ram 4Mx16
71V18163CJ6
16mx4
edo ram 16Mx4
1MX16
|