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    6520* TRANSISTOR Search Results

    6520* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6520* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CC 6520 TRANSISTOR

    Abstract: transistor SMD 2Z SMD 2z marking 23 MARKING 350 IC CMBT6520
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


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    PDF ISO/TS16949 OT-23 CMBT6520 C-120 CC 6520 TRANSISTOR transistor SMD 2Z SMD 2z marking 23 MARKING 350 IC CMBT6520

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    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS


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    PDF OT-23 CMBT6520 C-120

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    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


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    PDF OT-23 CMBT6520 C-120

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    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


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    PDF OT-23 CMBT6520 C-120

    SMD 2z marking 23

    Abstract: SMD 2z marking CC 6520 TRANSISTOR transistor marking SA p sot-23 ts 4141 TRANSISTOR smd CMBT6520 transistor marking SA sot-23 transistor SMD 2Z MARKING SMD pnp TRANSISTOR ec
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


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    PDF OT-23 CMBT6520 C-120 SMD 2z marking 23 SMD 2z marking CC 6520 TRANSISTOR transistor marking SA p sot-23 ts 4141 TRANSISTOR smd CMBT6520 transistor marking SA sot-23 transistor SMD 2Z MARKING SMD pnp TRANSISTOR ec

    2N6520

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519 2N6520

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    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519

    2N6515

    Abstract: 2N6517 6519 2N6520 DIODES 2N6516 2N6519 2N6520 C 331 to-92
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF ISO/TS16949 2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519 2N6517 6519 2N6520 DIODES 2N6520 C 331 to-92

    2N6517

    Abstract: 2N6515 2N6516 2N6519 2N6520
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N6515, 2N6519 2N6516, 2N6520 2N6517 2N6515 2N6516 2N6519 2N6517 2N6520

    ct2n

    Abstract: 2N6520 DIODES 2N6519 2N6520
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N6519 2N6520 9AC T2N6519 T2N6520 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E BC High Current Transistors Complementary 2N6516/2N6517


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    PDF 2N6519 2N6520 T2N6519 T2N6520 2N6516/2N6517 C-120 2N6520Rev050505E ct2n 2N6520 DIODES 2N6520

    2n3448

    Abstract: No abstract text available
    Text: 2N3448 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)


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    PDF 2N3448 O204AA) 2n3448

    CMPT6517

    Abstract: CMPT6520
    Text: Central C M P T 6517 NPN C M P T 6520 PNP Sem iconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CEN TR AL S E M IC O N D U C TO R C M P T 6517, C M P T 6520 types are com plementary silicon transistors manufactured by the epitaxial planar process,


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    PDF CMPT6517 CMPT6520 OT-23 cmpt6517, 357ITS 100mA 100mA 20MHz CMPT6517)

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    Abstract: No abstract text available
    Text: central1 C M P T 6517 NPN C M P T 6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: T he CENTRAL SE M IC O N D U C T O R C M P T 65 1 7, C M P T 6520 ty p e s are c o m p le m e n ta ry s ilic o n tra n s is to rs manufactured by the epitaxial planar process,


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    PDF OT-23

    MPS6520

    Abstract: MPS6521 MPS6522 MPS6523 MPS 6520
    Text: MPS 6520 thru’ MPS 6523 COMPLEMENTARY SILICON TRANSISTORS MPS6520, MPS6521 NPN and MPS6522, MPS6523 (PNP) are complementary silicon planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry. ABSOLUTE MAXIMUM RATINGS


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    PDF MPS6520, MPS6521 MPS6522, MPS6523 MPS6520 MPS6522 100mA 350mW MPS6521 MPS6523 MPS 6520

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    Abstract: No abstract text available
    Text: 23033*14 DDDDßSG T3G • CMBT 6520 HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    PDF CMBT6520

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    Abstract: No abstract text available
    Text: CMBT 6520 H IG H -V O L T A G E TRANSISTOR P -N -P transistor M arking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIM UM RATINGS Collector-base voltage open emitter


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    PDF CMBT6520

    2n6520

    Abstract: 2N6517 bc250 2n6519
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN NPN 2N 6515 2N 6517 PNP 2N 6519 2N 6520 PNP EMITTER EMITTER MAXIMUM RATINGS Rating Symbol 2N6515 2N6519 2N6517 2N6520 C oilector-E m itter Voltage v CEO 250 300 350 Vdc C ollector-B ase Voltage


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    PDF 2N6515, 2N6516, 2N6517 2N6519, 2N6520 2N6515 2N6519 2N6520 1/2MSD7000 bc250 2n6519

    CC 6520 TRANSISTOR

    Abstract: 33T4 CMBT6520
    Text: 23033^4 0D0D850 T3Q • CMBT 6520 HIGH-VOLTAGE TRANSISTOR P -N -P transistor MarkinS CMBT6520 = 2Z PACKAGE O UTLINE DETAILS ALL D IM E N SIO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


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    PDF DD0D850 CMBT6520 23A33TM CC 6520 TRANSISTOR 33T4 CMBT6520

    6522 versatile interface adapter

    Abstract: mos 6522 via 6522 6522 6522 mos 6522 VIA CC 6520 TRANSISTOR 650X LS12
    Text: DESCRIPTION The 6522 Versatile I nterface A dapter VIA provides all of the capability of the 6520 In addition, this d evice contains a pair of very powerful interval timers, a serial-to-parallel/parallel-to-serial shift register and input data latching on the peripheral ports. Expanded handshaking capability allows


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    PDF S3S311 JGC383 6522 versatile interface adapter mos 6522 via 6522 6522 6522 mos 6522 VIA CC 6520 TRANSISTOR 650X LS12

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    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE D • bb53^31 IAPX 002flDD3 M PS6520 MPS6521 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N small-signal transistors in plastic TO-92 envelope intended for low-noise applications in audio equipment. Complementary types areMPS6522 and MPS6523.


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    PDF 002flDD3 PS6520 MPS6521 areMPS6522 MPS6523. MPS6520

    2N6518

    Abstract: 2N6520
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current Base C urrent C ollector D issipation


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    PDF 2N6518 2N6520 -10nA, -150V, -10mA, -20mA, -30mA, -50mA, 2N6518

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    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation


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    PDF 2N6518 -100m -100V -100V,

    Untitled

    Abstract: No abstract text available
    Text: HIGH-VOLTAGE TRANSISTOR P-N -P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)


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    PDF CMBT6520

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6519 HIGH VOLTAGE TRANSISTOR TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation


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    PDF 2N6519 -100m -100V -100V,