TC58NVG1S3ETA00
Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NVG1S3ETA00
TC58NVG1S3E
2048blocks.
2112-byte
2010-01-25C
TC58NVG1S3ETA00
TC58NVG1S3ET
TC58NVG1S3
TC58NVG1S3ETA
DIN2111
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TC58NYG0S3E
Abstract: TC58NYG0S3ETA00 TC58NYG0S
Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETA00
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETA00
TC58NYG0S
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
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48-pin TSOP
Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001
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K9K2G08Q0M-YCB0
K9K2G08U0M-YCB0
K9K2G16Q0M-YCB0
K9K2G16U0M-YCB0
48-pin TSOP
K9K2G08U0M
48-pin TSOP (I) flash memory
samsung 1Gb nand flash
SAMSUNG 4gb NAND Flash Qualification Report
K9K2G08Q0M-Y
K9K2G16Q0M-Y
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Untitled
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended
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OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
67FBGA
KFG5616Q1A-PEB6
256Mb
48TSOP1
KFG5616D1A-DEB6
KFG5616D1A-PEB6
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HY27UF082G2A
Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY27UF
256Mx8bit/128Mx16bit)
HY27UF082G2A
HY27UF162G2A
HY27UF082G2A
HY27UF162G2A
hy27uf082G
hy27uf082
52-ULGA
hynix nand 2G
hynix nand flash 2gb
hynix nand
hynix nand spare area
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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Samsung Flash K9WAG08U1A
Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WAG08U1A
K9K8G08U0A
K9NBG08U5A
K9XXG08UXA
Samsung Flash K9WAG08U1A
K9K8G08U0A-PCB0
K9WAG08U0A
K9F4G08U0A
Samsung K9K8G08U0A
K9WAG08U1A
K9WAG08U1A-PCB0
K9XXG08UXA
K9NBG08U5A
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2817A
Abstract: S-2812A S-2817A
Text: Rev.1.2_00 S-2812A/2817A CMOS 16K-bit PARALLEL E2PROM The S-2812A and the S-2817A are low power 2Kx8-bit parallel 2 E PROMs. The S-2812A features wide operating voltage range, and the S-2817A features 5-V single power supply. Since provided with 32byte page write function, they can perform fast programming operation.
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S-2812A/2817A
16K-bit
S-2812A
S-2817A
32byte
2817A
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFXXX16Q2A
80x11
KFG1G16Q2A)
KFN2G16Q2A)
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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samsung 2GB X16 Nand flash
Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
samsung 2GB X16 Nand flash
SAMSUNG 4gb NAND Flash Qualification Report
samsung 2GB X8 Nand flash
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
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K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
SAMSUNG 4gb NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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K9F1G08U0C
Abstract: K9F1G08U0C-PIB0 K9F1G08U0C-PCB0 K9F1G08U0C-P SAMSUNG K9F1G08U0C NAND Flash Qualification Report K9F1G08B0C K9F1G08U0C TSOP K9F1G08U0CPCB0 K9F1G08X0C SAMSUNG NAND Flash Qualification Report
Text: Advance FLASH MEMORY K9F1G08B0C K9F1G08U0C K9F1G08X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1G08B0C
K9F1G08U0C
K9F1G08X0C
K9F1G08U0C
K9F1G08U0C-PIB0
K9F1G08U0C-PCB0
K9F1G08U0C-P
SAMSUNG K9F1G08U0C NAND Flash Qualification Report
K9F1G08U0C TSOP
K9F1G08U0CPCB0
K9F1G08X0C
SAMSUNG NAND Flash Qualification Report
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nand flash 512M
Abstract: K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report
Text: Target MCP MEMORY K5D1G13KCM-D075 MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K5D1G13KCM-D075
512Mb
119-Ball
nand flash 512M
K5D1G
K5D1G13KCM-D075
4Mx32x4banks
SAMSUNG MCP
14X14mm
K5D1G13
SAMSUNG 512Mb NAND Flash Qualification Report
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K9WBG08U1M
Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Text: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WBG08U1M
K9KAG08U0M
K9NCG08U5M
K9XXG08XXM
100ns)
K9WBG08U1M-PCB0
K9NCG08U5M-PCB0
K9NCG08U5M
Samsung K9NCG08U5M
K9F8G08U0M
K9KAG08U0M-PCB0
k9wbg08
K9KAG08U0M-P
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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022AH
Abstract: No abstract text available
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
022AH
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ofc capacitor
Abstract: No abstract text available
Text: A '0 5 - 1 7 k - e ECQB A fl2, ECHRM, EC QP(A )^ ECQP(A) > 7 r > W ¥ f & l Z ' 7 7 Z. Ü T 't o ^ÿr#B 8<^ê^o 62page • qo— m . 7 ECHR 64page ECQB(A) ECHR O.F.C. capacitor series are especially designed fo r audio equipment. These series with oxygen-free co pp er leads
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62page
64page
66page
ofc capacitor
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power start p4a
Abstract: BY256 sharp 4 BIT INSTRUCTION 30-PIN 32-PIN QFP036-P-1010 SHARP SM5
Text: SHARP SM5K6 SM5K6 4-Bit Single-Chip Microcomputer Controller With 10-Bit AID Converter DESCRIPTION The SM 5K6 is a CM OS 4-bit single-chip m icro com puter incorporating 4-bit parallel processing ♦ Packages : 30-pin SDIP (S D IP030-P-0400) function, serial interface function, ROM, RAM, 10bit A/D converter and tim er/counters.
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10bit
10-Bit
30-pin
IP030-P-0400)
32-pin
OP032-P-0525)
36-pin
QFP036-P-1010)
52fo-fi5
P00-P03
power start p4a
BY256
sharp 4 BIT INSTRUCTION
QFP036-P-1010
SHARP SM5
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