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    64N60 Search Results

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    64N60 Price and Stock

    Littelfuse Inc IXFX64N60P3

    MOSFET N-CH 600V 64A PLUS247-3
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    DigiKey IXFX64N60P3 Tube 959 1
    • 1 $10.85
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    • 100 $8.11467
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    Newark IXFX64N60P3 Bulk 58 1
    • 1 $10.63
    • 10 $9.29
    • 100 $7.96
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    Littelfuse Inc IXFX64N60P

    MOSFET N-CH 600V 64A PLUS247-3
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    DigiKey IXFX64N60P Tube 787 1
    • 1 $16.6
    • 10 $16.6
    • 100 $13.77233
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    Newark IXFX64N60P Bulk 300
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    Littelfuse Inc IXFK64N60P3

    MOSFET N-CH 600V 64A TO264AA
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    DigiKey IXFK64N60P3 Tube 414 1
    • 1 $16.76
    • 10 $16.76
    • 100 $16.76
    • 1000 $9.00788
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    Newark IXFK64N60P3 Bulk 300
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    RS IXFK64N60P3 Bulk 8 Weeks 25
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    • 100 $13.93
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    Littelfuse Inc IXFR64N60Q3

    MOSFET N-CH 600V 42A ISOPLUS247
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    DigiKey IXFR64N60Q3 Tube 30 300
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    Newark IXFR64N60Q3 Bulk 300
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    RS IXFR64N60Q3 Bulk 8 Weeks 30
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    • 100 $40.76
    • 1000 $40.76
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    Littelfuse Inc IXFX64N60Q3

    MOSFET N-CH 600V 64A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFX64N60Q3 Tube 17 1
    • 1 $26.36
    • 10 $26.36
    • 100 $26.36
    • 1000 $26.36
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    Newark IXFX64N60Q3 Bulk 300
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    • 1000 $22.77
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    Find more 64N60 price and stock on Findchips.com

    64N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 64N60P OT-227 E153432

    64N60P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		PDF 64N60P 64N60P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 64N60P ISOPLUS247 E153432

    64N60

    Abstract: 64N60P ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 64N60P ISOPLUS247 E153432 64N60 64N60P ISOPLUS247

    64N60P

    Abstract: PLUS247 IXFK
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		PDF 64N60P 64N60P PLUS247 IXFK

    D33AD

    Abstract: 64N60 64N60P ISOPLUS247 33A d
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 29 A Ω 105 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		PDF 64N60P D33AD 64N60 64N60P ISOPLUS247 33A d

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 600 V = 34 A ≤ 96 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		PDF ISOPLUS247 64N60P

    IXFN 64N60P

    Abstract: 64N60P IXFN64N60P
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 64N60P OT-227 E153432 IXFN 64N60P 64N60P IXFN64N60P

    64N60P

    Abstract: PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 64N60P 64N60P PLUS247

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p