cy7c9101
Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Text: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M
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MILSTD883D
22pin
24pin
28pin
32pin
300mil
cy7c9101
CY2901
CY7C190
PLD20RA10
CY2149
CY7C122
CY7C148
CY7C149
CY7C150
22V10-Macrocell
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CY7C191
Abstract: CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C199
Text: Qualification Report August 1995, QTP# 95137/95161, Version 1.0 256K SRAM, FAB 4 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Static RAM with Separate I/O CY7C192 64K x 4 Static RAM with Separate I/O CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM
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CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C199
28-pin,
300-mil
CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C199
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ph44
Abstract: 71V016 IDT71V016
Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM
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IDT71V016
16-BIT)
15/20/25ns
44-pin
IDT71V016
576-bit
ph44
71V016
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CY7C191
Abstract: CY7C192 CY7C194 CY7C196 CY7C197 CY7C198 CY7C199
Text: Qualification Report June 1992, QTP 92062 Version 3.1 256K SRAM FAB 3 QUALIFICATION MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4, Seperate I/O, Transparent Write, Static RAM CY7C192 64K x 4, Seperate I/O, Static RAM CY7C194 64K x 4, Static RAM
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CY7C191
CY7C192
CY7C194
CY7C196
CY7C197
CY7C198
CY7C199
CY7C191/192/194/195/196/197/198/199
15psig)
CY7C191
CY7C192
CY7C194
CY7C196
CY7C197
CY7C198
CY7C199
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CY7C191
Abstract: CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198 CY7C199 EME-6300 eme-6300h
Text: Qualification Report QTP# 94444 Version 1.0 February, 1995 256K SRAM, RAM 2.5 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Separate IO with transparent write CY7C192 64K x 4 Separate IO without transparent write CY7C194 64K x 4 Common IO with no OE
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CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C198
CY7C199
CY7C191/192/194/195/196/197/198/199
CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C198
CY7C199
EME-6300
eme-6300h
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CYM1622
Abstract: CYM1622PV-15C CYM1622PV-20C 64k x 4 sram
Text: CYM1622 64K x 16 Static RAM Module Features Functional Description D The CYM1622 is a very high performance 1Ćmegabit static RAM module organized as 64K words by 16 bits. The module is constructed using four 64K x 4 static RAMs mounted onto a vertical substrate
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CYM1622
CYM1622
CYM1611)
I/O15)
CYM1622PV-15C
CYM1622PV-20C
64k x 4 sram
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IDT71016
Abstract: No abstract text available
Text: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times
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IDT71016
16-BIT)
15/20/25ns
44-pin
IDT71016
576-bit
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Olin-194
Abstract: 6 mil poly vapor barrier olin194 CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198
Text: Qualification Report March, 1997 QTP# 94052 Version 1.1 256K SRAM, RAM 2.5 TECHNOLOGY, 7% SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Separate IO with transparent write CY7C192 64K x 4 Separate IO without transparent write CY7C194 64K x 4 Common IO with no OE
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CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C198
CY7C199
Semicondu1000
Olin-194
6 mil poly vapor barrier
olin194
CY7C191
CY7C192
CY7C194
CY7C195
CY7C196
CY7C197
CY7C198
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L7C187PC20
Abstract: CY7C187 IDT7187 L7C187CC15 L7C187CC20 L7C187PC12 L7C187PC15 L7C187 64k x 1 static ram
Text: L7C187 L7C187 DEVICES INCORPORATED 64K x 1 Static RAM 64K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 64K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum
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L7C187
MIL-STD-883,
IDT7187,
CY7C187
22-pin
24-pin
L7C187
L7C187PC20
CY7C187
IDT7187
L7C187CC15
L7C187CC20
L7C187PC12
L7C187PC15
64k x 1 static ram
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71V016
Abstract: datasheet for 64K RAM ph44 IDT71V016
Text: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times
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IDT71V016
16-BIT)
15/20/25ns
44-pin
IDT71V016
576-bit
200mV
71V016
datasheet for 64K RAM
ph44
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M18325
Abstract: M18323
Text: CYM1832 64K x 32 Static RAM Module Features Functional Description D D The CYM1832 is a highĆperformance 2ĆMbit static RAM module organized as 64K words by 32 bits. This module is conĆ structed from eight 64K x 4 SRAMs in SOJ packages mounted on an epoxy laminate
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CYM1832
CYM1832
M18325
M18323
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s5 rack
Abstract: No abstract text available
Text: COMPONENT DESCRIPTION BULLETIN 3100 DMC USER MEMORY 64K 3100-MR2 SERIES A DESCRIPTION SPECIFICATIONS 3100-MR2 MEM86-192K/RAM 64K is a general purpose memory board which contains 64K user memory and 64K system memory with battery back up. The memory is set via program.
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3100-MR2
3100-MR2
MEM86-192K/RAM
0to50Â
X4000-X7FFIONS
X4000-X7FF
X0000-X3FFF
X4000-X7FFF
s5 rack
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IDT7M812
Abstract: No abstract text available
Text: IN T E G R A T E D DEVI CE 3ÛE D • 4ÔES771 Q0G7G1M fl ■ ID T 23-14 IDT7M812 IDT7M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CMOS static RAM module • 64K x 8 IDT7M812 or 64K x 9 (IDT7M912) configuration
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ES771
IDT7M812)
IDT7M912)
40-pin,
IDT7M812
IDT7M912
IDT7M812/IDT7M912
T-46-23-14
MIL-STD-883,
7M812
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7M912
Abstract: IDT7M912 Idt7m812 7M812
Text: Integrated Device Technology, Inc. IDT7M812 ID77M912 64K x 8 64K x 9 CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • High-density 512K CM OS static RAM module • 64K x 8 IDT7M812 or64K x 9 (IDT7M912) configuration • Fast access times — Military: 25ns (max.)
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IDT7M812
ID77M912
IDT7M812)
or64K
IDT7M912)
240nW
40-pin,
812/IDT7M912
IDT7187
IDT7M812,
7M912
IDT7M912
7M812
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Untitled
Abstract: No abstract text available
Text: LATTI ¿ y / SR64K8 HIGH PERFORMANCE 64K STATIC RAM 8 K x 8 Preliminary FEATURES r FUNCTIONAL BLOCK DIAGRAM FULLY STATIC C M O S — No Clocks Required FA ST A C C E S S T IM E = C Y C L E TIM E — SR 64K 8-35: 35 ns Max — SR 64K 8-45: 45 ns Max — SR 64K 8-55: 55 ns Max
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SR64K8
28-pin,
32-pin
600-MIL
600-M
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Untitled
Abstract: No abstract text available
Text: DPS384 64K X 6 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS DESCRIPTION: The DPS384 is a 64K X 6 high-speed, low-power static RAM module comprised of six 64K X 1 monolithic SRAM's, and decoupling capacitors surface mounted on a single inline co-fired ceramic
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DPS384
DPS384
40-Pin
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68w smd
Abstract: CYM1621
Text: CYM1621 CYPRESS SEMICONDUCTOR 64K x 16 Static RAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1621 is a high-performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed from sixteen 64K x 1 SRAMs
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CYM1621
CYM1621
CYM1621HD-20C
CYM1621LHD-20C
CYM1621HD-25C
CYM1621LHD-25C
1621HD-25MB
1621LHD-25MB
CYM1621HD-30C
CYM1621LHD-30C
68w smd
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Untitled
Abstract: No abstract text available
Text: CYPRESS SEMICONDUCTOR CYM1624 = 64K x 16 SRAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1624 is a very high performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed using four 64K x 4 static
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CYM1611
CYM1622
CYM1624
1623-S
CYM1624PV-25C
CYM1624PV-35C
CYM1624PV-45C
38-M-00028
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L255N
Abstract: No abstract text available
Text: CYM1830 CYPRESS SEMICONDUCTOR 64K x 32 Static RAM Module Features Functional Description • High-density 2-megabit SRAM module The CYM1830 is a high-performance 2-megabit static RAM module organized as 64K words by 32 bits. This module is constructed from eight 64K x 4 SRAMs in
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CYM1830
CYM1830
CYM1830HD-25C
CYM1830HD-30C
CYM1830HD-35C
CYM1830HD-35MB
1830HD-45C
CYM1830HD-45MB
CYM1830HD-55C
L255N
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Untitled
Abstract: No abstract text available
Text: CYPRESS SEMICONDUCTOR CYM1624 • = 64K x 16 SRAM Module Features Functional Description • High-density 1-megabit SRAM module The CYM1624 is a very high performance 1-megabit static RAM module organized as 64K words by 16 bits. This module is constructed using four 64K x 4 static
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CYM1611
CYM1622
CYM1624
CYM1624PV-25C
CYM1624PV-35C
CYM1624PV-45C
38-M-00028
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Untitled
Abstract: No abstract text available
Text: DPS8644 □PM Dense-Pac Microsystems, Inc. 64K X 4 CMOS SRAM MODULE O NOT RECOMMENDED FOR NEW DESIGNS D ESCR IPTIO N : The DPS8644 is a 64K X 4 high-speed, low-power static RAM module comprised of four 64K X 1 monolithic SRAM 's, and decoupling capacitors
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DPS8644
DPS8644
500mV
Technology30*
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Untitled
Abstract: No abstract text available
Text: DPS64X16P □ Dense-Pac Microsystems, Inc. 0_ 64K X 16 CMOS CM SRAM MODULE PRELIMINARY DESCRIPTION: The DPS64X16P is a 64K X 16 high-speed, low-power static RAM module comprised of four 64K X 4 monolithic SRAM's, and decoupling capacitors surface mounted on a FR-4 substrate.
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DPS64X16P
DPS64X16P
220mW
30A057-00
S64X16P
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DSC-703
Abstract: No abstract text available
Text: IDT 7MC4018 64K x 6 CMOS STATIC RAM CERAMIC SIP MODULE WITH SEPARATE DATA I/O FEATURES: DESCRIPTION: • High-density 64K x 6 CMOS static RAM module The IDT7MC4018 isa 64K x 6-bit high-speed static RAM module constructed on a co-fired ceram ic substrate using six IDT7187
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40-pin
IDT7187S,
MIL-STD-883,
7MC4018
DSC-703
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Untitled
Abstract: No abstract text available
Text: Í D P M 7Dense-Pac Microsystems. Inc. 0 DPS1025 64K X 16 CMOS SRAM MODULE NOT RECOMMENDED FOR NEW DESIGNS D ESCRIPTIO N : The DPS1025 is a 64K X 8 high-speed, low-power static RAM module comprised of sixteen 64K X 1 monolithic SRAM 's, and decoupling capacitors
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DPS1025
DPS1025
Complete601
S1025
125-C
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