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Mallory Sonalert Products Inc AST1640MACTRQ BUZZER PIEZO 3V16X16MM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AST1640MACTRQ	Reel	4,000		800	1 - 10 - 100 - 1000 $1.25129 10000 $1.20165	Buy Now
Mouser Electronics	AST1640MACTRQ		419			1 $2.52 10 $2.09 100 $1.7 1000 $1.44 10000 $1.39	Buy Now
RS	AST1640MACTRQ	Bulk			1	1 $2.57 10 $2.57 100 $2.57 1000 $2.57 10000 $2.57	Get Quote
Master Electronics	AST1640MACTRQ		800			1 - 10 $2.77 100 $2.14 1000 $1.72 10000 $1.72	Buy Now
Sager	AST1640MACTRQ				1	1 $2.54 10 $2.54 100 $2.54 1000 $1.97 10000 $1.33	Buy Now
Mallory Sonalert Products Inc AST1640MACQ BUZZER PIEZO 3V16X16MM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AST1640MACQ				1,000	1 - 10 - 100 - 1000 $1.33929 10000 $1.33929	Buy Now
Mouser Electronics	AST1640MACQ					1 $2.44 10 $2.44 100 $2 1000 $1.44 10000 $1.44	Get Quote
Newark	AST1640MACQ	Bulk	199		1	1 $0.438 10 $0.438 100 $0.438 1000 $0.438 10000 $0.438	Buy Now
RS	AST1640MACQ	Bulk			1	1 $2.81 10 $2.81 100 $2.81 1000 $2.81 10000 $2.81	Get Quote
Master Electronics	AST1640MACQ		160			1 - 10 $2.91 100 $2.24 1000 $1.8 10000 $1.8	Buy Now

Sager	AST1640MACQ				1	1 $2.67 10 $2.67 100 $2.67 1000 $1.73 10000 $1.4	Buy Now
Siemens 6ES76478BB640MA1 SIMATIC IPC227E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	6ES76478BB640MA1	Box			1	1 $3145.19 10 $3145.19 100 $3145.19 1000 $3145.19 10000 $3145.19	Buy Now
RS	6ES76478BB640MA1	Bulk		2 Weeks	1	1 $2879.7 10 $2879.7 100 $2879.7 1000 $2879.7 10000 $2879.7	Get Quote
AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-002 Embedded Computer SSD Core i3-6100TE/Core i5-6500TE/Core i7-6700TE/Core i3-7101TE/Core i5-7500T/Core i7-7700T/Core Pentium G4560T/Core Pentium G4500T/Core Pentium G4400TE Intel 26 Core - Bulk (Alt: RW-BOXER-6640M-A2-1010-STE-002)
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Avnet Americas	RW-BOXER-6640M-A2-1010-STE-002	Bulk		10 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-003 BOXER-6640M-A2-1010 W/I7-6700TE, 8GB DDR4, 256G MSATA, 1TB HDD, TPM MODULE, WIN10 IOT 64BIT, POWER ADAPTOR, POWER CORD , INTEGRATION & TEST - Bulk (Alt: RW-BOXER-6640M-A2-1010-STE-003)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RW-BOXER-6640M-A2-1010-STE-003	Bulk		15 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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640MA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CBC2012T2R2M Abstract: No abstract text available Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T2R2M Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions	Original	PDF	CBC2012T2R2M 530mA, 640mA, 3000pcs 96MHz 530mA 640mA 70MHz CBC2012T2R2M
G138K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	2005/07/14B G138K 640mA G138K
GS138K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	GS138K 640mA GS138K
G3018K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 8 640mA Description The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	G3018K 640mA G3018K
G111K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 55V 2 640mA Description The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	2005/07/14B 640mA G111K
G301K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	G301K 640mA G301K
Untitled Abstract: No abstract text available Text: SSM7002KGEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 60V R DS ON 2Ω ID 640mA DESCRIPTION The SSM7002KGEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC	Original	PDF	SSM7002KGEN 640mA SSM7002KGEN OT-23-3 OT-23-3
Untitled Abstract: No abstract text available Text: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CBC2012T2R2MV Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified	Original	PDF	CBC2012T2R2MV 530mA, 640mA, AEC-Q200 3000pcs 96MHz 530mA 640mA
SSF3018K Abstract: SSF3018 Text: SSF3018K 640mA, 30V,RDS ON 8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF3018K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.	Original	PDF	SSF3018K 640mA, SSF3018K Symb01-Jun-2002 01-Jun-2002 SSF3018
G2N7002K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,	Original	PDF	2005/07/14B G2N7002K 640mA G2N7002K
GS2N7002K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2005/09/19 REVISED DATE : GS2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.	Original	PDF	GS2N7002K 640mA GS2N7002K
GT6301K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GT6301K BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 1 640mA Description The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	GT6301K 640mA GT6301K
Untitled Abstract: No abstract text available Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions	Original	PDF	NRS5012T150MMGF 1200mA, 640mA 1000pcs 100kHz 1200mA 22MHz
Untitled Abstract: No abstract text available Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS5012T150MMGFV Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage	Original	PDF	NRS5012T150MMGFV 1200mA, 640mA AEC-Q200 1000pcs 100kHz 1200mA

AP2N7002K Abstract: No abstract text available Text: AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS ON 2Ω ID ▼ RoHS Compliant 640mA S SOT-23 Description	Original	PDF	AP2N7002K 640mA OT-23 OT-23 AP2N7002K
SST6301 Abstract: No abstract text available Text: SST6301K 640mA, 30V,RDS ON 1.0Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST6301K utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.	Original	PDF	SST6301K 640mA, OT-26 37Ref. SST6301K 20Ref. Ab1-Jun-2002 SST6301
FI-XB30SL-HF10 Abstract: LQ170E1LG11 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD 6V DC-AC Fluorescent lamp lcd tv lvds cable pin voltages toshiba corss LD-166 Text: RECORDS OF REVISION LQ170E1LG11 SPEC No. DATE No. LD-16111 June 28. 2004 LD-16111A July 06.2004 SUMMARY REVISED NOTE PAGE 1st Issue △1 8 2nd Issue Added SPEC. 6. Electrical Characteristics 6-1. TFT-LCD panel driving Rush current TYP=640mA 【NOTE4】【Note4】The rush current is measured at this	Original	PDF	LQ170E1LG11 LD-16111 LD-16111A 640mA 470sec. LD-16611B LD-16611C LD16611C-20 FI-XB30SL-HF10 LQ170E1LG11 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD 6V DC-AC Fluorescent lamp lcd tv lvds cable pin voltages toshiba corss LD-166
SSF138K Abstract: No abstract text available Text: SSF138K 640mA, 50V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF138K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.	Original	PDF	SSF138K 640mA, SSF138K 01-Jun-2002
SMG301K Abstract: No abstract text available Text: SMG301K 640mA, 30V,RDS ON 1Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free Description SC-59 The SMG301K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness	Original	PDF	SMG301K 640mA, SC-59 SMG301K 01-Jun-2002
FET MARKING QG Abstract: SMG111K marking 111E Text: SMG111K 640mA, 55V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description A The SMG111K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for	Original	PDF	SMG111K 640mA, SMG111K SC-59 01-Jun-2002 FET MARKING QG marking 111E
transistor 702E Abstract: 702E smg702k 702e mosfet marking 702E Text: SMG702K 640mA, 60V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A L Description SC-59 The SMG702K utilized advanced processing techniques to achieve the lowest possible on-resistance,	Original	PDF	SMG702K 640mA, SC-59 SMG702K 01-Jun-2002 transistor 702E 702E 702e mosfet marking 702E
NRS5012T150MMGF Abstract: NRS5012T150M Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions	Original	PDF	NRS5012T150MMGF 1200mA, 640mA 1000pcs 100kHz 1200mA 22MHz NRS5012T150MMGF NRS5012T150M
GTT6301K Abstract: No abstract text available Text: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GTT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The GTT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely	Original	PDF	GTT6301K 640mA GTT6301K
B2A16LY Abstract: No abstract text available Text: CRO ABSOLUTE M A X IM U M R A TIN G S Forward Current Reverse Voltage Operating Temperature Storage Temperature 640mA 10V -20 to +70°C -30 to +80°C VR Topr Tstg Ta=25°C SYMBOL MIN TYP f o r w a r d Voltage VF 3.6 4.0 Reverse Current IR Peak Wavelength	OCR Scan	PDF	B2A16LY 640mA -320mA 320mA B2A16LY

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640MA Search Results

640MA Price and Stock

Mallory Sonalert Products Inc AST1640MACTRQ

Mallory Sonalert Products Inc AST1640MACQ

Siemens 6ES76478BB640MA1

AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-002

AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-003

640MA Datasheets Context Search

CBC2012T2R2M

G138K

GS138K

G3018K

G111K

G301K

Untitled

Untitled

SSF3018K

G2N7002K

GS2N7002K

GT6301K

Untitled

Untitled

AP2N7002K

SST6301

FI-XB30SL-HF10

SSF138K

SMG301K

FET MARKING QG

transistor 702E

NRS5012T150MMGF

GTT6301K

B2A16LY