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    640MA Price and Stock

    Mallory Sonalert Products Inc AST1640MACTRQ

    BUZZER PIEZO 3V16X16MM SMD
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    DigiKey AST1640MACTRQ Digi-Reel 4,478 1
    • 1 $2.26
    • 10 $1.84
    • 100 $1.5007
    • 1000 $1.38472
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    AST1640MACTRQ Cut Tape 4,478 1
    • 1 $2.26
    • 10 $1.84
    • 100 $1.5007
    • 1000 $1.38472
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    AST1640MACTRQ Reel 4,000 800
    • 1 -
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    • 100 -
    • 1000 $1.25129
    • 10000 $1.20165
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    Mouser Electronics AST1640MACTRQ 426
    • 1 $2.52
    • 10 $2.09
    • 100 $1.7
    • 1000 $1.44
    • 10000 $1.39
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    RS AST1640MACTRQ Bulk 1
    • 1 $2.57
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    Master Electronics AST1640MACTRQ 800
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    • 100 $2.14
    • 1000 $1.72
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    Sager AST1640MACTRQ 1
    • 1 $2.54
    • 10 $2.54
    • 100 $2.54
    • 1000 $1.97
    • 10000 $1.33
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    Mallory Sonalert Products Inc AST1640MACQ

    BUZZER PIEZO 3V16X16MM SMD
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    DigiKey AST1640MACQ 1,000
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    • 1000 $1.33929
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    Mouser Electronics AST1640MACQ
    • 1 $2.44
    • 10 $2.44
    • 100 $2
    • 1000 $1.44
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    Newark AST1640MACQ Bulk 199 1
    • 1 $0.438
    • 10 $0.438
    • 100 $0.438
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    RS AST1640MACQ Bulk 1
    • 1 $2.81
    • 10 $2.81
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    Master Electronics AST1640MACQ 160
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    • 100 $2.24
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    Sager AST1640MACQ 1
    • 1 $2.67
    • 10 $2.67
    • 100 $2.67
    • 1000 $1.73
    • 10000 $1.4
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    Siemens 6ES76478BB640MA1

    SIMATIC IPC227E
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    DigiKey 6ES76478BB640MA1 Box 1
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    RS 6ES76478BB640MA1 Bulk 2 Weeks 1
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    AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-002

    Embedded Computer SSD Core i3-6100TE/Core i5-6500TE/Core i7-6700TE/Core i3-7101TE/Core i5-7500T/Core i7-7700T/Core Pentium G4560T/Core Pentium G4500T/Core Pentium G4400TE Intel 26 Core - Bulk (Alt: RW-BOXER-6640M-A2-1010-STE-002)
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    AAEON Technology Inc RW-BOXER-6640M-A2-1010-STE-003

    BOXER-6640M-A2-1010 W/I7-6700TE, 8GB DDR4, 256G MSATA, 1TB HDD, TPM MODULE, WIN10 IOT 64BIT, POWER ADAPTOR, POWER CORD , INTEGRATION & TEST - Bulk (Alt: RW-BOXER-6640M-A2-1010-STE-003)
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    Find more 640MA price and stock on Findchips.com

    640MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBC2012T2R2M

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2012T2R2M Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original     		PDF CBC2012T2R2M 530mA, 640mA, 3000pcs 96MHz 530mA 640mA 70MHz CBC2012T2R2M

    G138K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The G138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF 2005/07/14B G138K 640mA G138K

    GS138K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 2 640mA Description The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GS138K 640mA GS138K

    G3018K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/11/11 REVISED DATE : G3018K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 8 640mA Description The G3018K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF G3018K 640mA G3018K

    G111K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/04/27 REVISED DATE :2005/07/14B G 111 K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 55V 2 640mA Description The G111K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF 2005/07/14B 640mA G111K

    G301K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : G301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The G301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF G301K 640mA G301K

    Untitled

    Abstract: No abstract text available
    Text: SSM7002KGEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 60V R DS ON 2Ω ID 640mA DESCRIPTION The SSM7002KGEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC


    Original     		PDF SSM7002KGEN 640mA SSM7002KGEN OT-23-3 OT-23-3

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application Wire-wound Chip Inductors for Industrial / Automotive Comfort and Safety Applications (CB series) CBC2012T2R2MV Features Item Summary 2.2 H(±20%), 530mA, 640mA, 0805 Lifecycle Stage Mass Production AEC-Q200 qualified


    Original     		PDF CBC2012T2R2MV 530mA, 640mA, AEC-Q200 3000pcs 96MHz 530mA 640mA

    SSF3018K

    Abstract: SSF3018
    Text: SSF3018K 640mA, 30V,RDS ON 8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF3018K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.


    Original     		PDF SSF3018K 640mA, SSF3018K Symb01-Jun-2002 01-Jun-2002 SSF3018

    G2N7002K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/07/14B G2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The G2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF 2005/07/14B G2N7002K 640mA G2N7002K

    GS2N7002K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2005/09/19 REVISED DATE : GS2N7002K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 60V 2 640mA Description The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.


    Original     		PDF GS2N7002K 640mA GS2N7002K

    GT6301K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GT6301K BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 30V 1 640mA Description The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GT6301K 640mA GT6301K

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF NRS5012T150MMGF 1200mA, 640mA 1000pcs 100kHz 1200mA 22MHz

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS5012T150MMGFV Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage


    Original     		PDF NRS5012T150MMGFV 1200mA, 640mA AEC-Q200 1000pcs 100kHz 1200mA

    AP2N7002K

    Abstract: No abstract text available
    Text: AP2N7002K Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS ON 2Ω ID ▼ RoHS Compliant 640mA S SOT-23 Description


    Original     		PDF AP2N7002K 640mA OT-23 OT-23 AP2N7002K

    SST6301

    Abstract: No abstract text available
    Text: SST6301K 640mA, 30V,RDS ON 1.0Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST6301K utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.


    Original     		PDF SST6301K 640mA, OT-26 37Ref. SST6301K 20Ref. Ab1-Jun-2002 SST6301

    FI-XB30SL-HF10

    Abstract: LQ170E1LG11 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD 6V DC-AC Fluorescent lamp lcd tv lvds cable pin voltages toshiba corss LD-166
    Text: RECORDS OF REVISION LQ170E1LG11 SPEC No. DATE No. LD-16111 June 28. 2004 LD-16111A July 06.2004 SUMMARY REVISED NOTE PAGE 1st Issue △1 8 2nd Issue Added SPEC. 6. Electrical Characteristics 6-1. TFT-LCD panel driving Rush current TYP=640mA 【NOTE4】 【Note4】The rush current is measured at this


    Original     		PDF LQ170E1LG11 LD-16111 LD-16111A 640mA 470sec. LD-16611B LD-16611C LD16611C-20 FI-XB30SL-HF10 LQ170E1LG11 FI-X30M MDF76 FI-X30H MDF76G-30P-1SD 6V DC-AC Fluorescent lamp lcd tv lvds cable pin voltages toshiba corss LD-166

    SSF138K

    Abstract: No abstract text available
    Text: SSF138K 640mA, 50V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The SSF138K utilized advanced oricessing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.


    Original     		PDF SSF138K 640mA, SSF138K 01-Jun-2002

    SMG301K

    Abstract: No abstract text available
    Text: SMG301K 640mA, 30V,RDS ON 1Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free Description SC-59 The SMG301K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness


    Original     		PDF SMG301K 640mA, SC-59 SMG301K 01-Jun-2002

    FET MARKING QG

    Abstract: SMG111K marking 111E
    Text: SMG111K 640mA, 55V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description A The SMG111K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and cost-effectiveness device. The SMG111K is universally used for


    Original     		PDF SMG111K 640mA, SMG111K SC-59 01-Jun-2002 FET MARKING QG marking 111E

    transistor 702E

    Abstract: 702E smg702k 702e mosfet marking 702E
    Text: SMG702K 640mA, 60V,RDS ON 2Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET A suffix of "-C" specifies halogen & lead-free A L Description SC-59 The SMG702K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF SMG702K 640mA, SC-59 SMG702K 01-Jun-2002 transistor 702E 702E 702e mosfet marking 702E

    NRS5012T150MMGF

    Abstract: NRS5012T150M
    Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS5012T150MMGF Features Item Summary 15 H(±20%), 1200mA, 640mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions


    Original     		PDF NRS5012T150MMGF 1200mA, 640mA 1000pcs 100kHz 1200mA 22MHz NRS5012T150MMGF NRS5012T150M

    GTT6301K

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GTT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 30V 1 640mA Description The GTT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely


    Original     		PDF GTT6301K 640mA GTT6301K

    B2A16LY

    Abstract: No abstract text available
    Text: CRO ABSOLUTE M A X IM U M R A TIN G S Forward Current Reverse Voltage Operating Temperature Storage Temperature 640mA 10V -20 to +70°C -30 to +80°C VR Topr Tstg Ta=25°C SYMBOL MIN TYP f o r w a r d Voltage VF 3.6 4.0 Reverse Current IR Peak Wavelength


    OCR Scan     		PDF B2A16LY 640mA -320mA 320mA B2A16LY