ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
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Original
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CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
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PDF
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IDT6168
Abstract: IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
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IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
|
PDF
|
DSC1121
Abstract: IDT6168 300mil SO20 Package IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption
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Original
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IDT6168SA
IDT6168LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
DSC1121
IDT6168
300mil SO20 Package
IDT6168SA
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA 6168LA35 6168SA 6168SA20
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
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IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
6168LA35
6168SA
6168SA20
|
PDF
|
IDT6168
Abstract: IDT6168LA IDT6168SA
Text: IDT6168SA IDT6168LA CMOS STATIC RAM 16K 4K x 4-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation—2V data retention voltage
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Original
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
IDT6168SA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
M1L-STD-883,
IDT6168
384-bit
|
PDF
|
5962-86705
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption
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OCR Scan
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IDT6168SA
IDT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
1DT6168SA
225mW
100nW
IDT6168LA
5962-86705
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTEGRATE] D E V I C E 3ÔE D • 4 Ô 2 5 7 7 1 OQGfilbl =1 ■ CMOS STATIC RAM 16K 4Kx 4-BIT) IDT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.)
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OCR Scan
|
IDT6168SA
IDT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
225mW
IDT6168LA
20-pin
|
PDF
|
1DT6168SA
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption • Battery backup operation— 2V data retention voltage
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
IDT6168
384-bit
1DT6168SA
|
PDF
|
2Y202
Abstract: dt6168 1N12J
Text: § d t Integrated DevteTfechnology. Inc CMOS STATIC RAM 16K 4K x 4-BIT) ID T 6 1 6 8 S A ID T 6 1 6 8 L A FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-blt h ig h -sp ee d s ta tic RAM organized as 4 K x 4 . It Is fa b ric a te d u s in g ID T’s hig h -p erform a n ce, high-rellability te c h n o lo g y -C E M O S . T h is state-of-the-art te ch n olo gy, c o m
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OCR Scan
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2/15/20/25/35ns
IDT6168SA
100pW
IDT6168LA
T6168LA
20-pin
IDT61088A
/lDT6168LA
MIL-STD-883,
2Y202
dt6168
1N12J
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 2 /1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (m ax.) — Com mercial: 1 0 /1 2 /1 5/2 0 /2 5 /3 5 n s (max.)
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OCR Scan
|
IDT6168SA
IDT6168LA
T6168LA
20-pin
20-pin
IDT6168SA/LA
MIL-STD-883,
|
PDF
|
IDT6168LA
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4KX 4-BIT IDT 6 I 68 SA IDT6¿68LA FEATURES: DESCRIPTION: • The IDT6168 is a 16,384-bit h ig h -s p e e d sta tic RAM organized as 4K x 4. It Is fa b rica te d u sin g ID T's h ig h -p erform a n ce, hlgh-rellability te c h n o lo g y — C EM O S . T h is state-of-the-art te c h n o lo g y , c o m
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OCR Scan
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IDT6168
384-bit
IDT6168SA/IDT6168LA
MIL-STD-883,
IDT6168LA
|
PDF
|
d1994
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
d1994
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed {equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption
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OCR Scan
|
IDT6168SA
IDT6168LA
15/20/25/35/45/55/70/85/100ns
15/20/25/35ns
IDT6168LA
20-pin
20pin
MIL-STD-883,
|
PDF
|
|
s431 ac
Abstract: s431 A95E
Text: mE INTEGRATED DEVICE D HÖ25771 □ 0 0 3 5 £i3 7 IDT 6168SA IDT 6168LA CMOS STATIC RAM 1 6K 4K x 4-BIT T - H h ' 1 3 - ö Z FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) Tiie IDT6168 Isa 16,384-blt high-speed static RAM organized as
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OCR Scan
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6168SA
6168LA
15/20/25/35/45/55/70/85/100ns
12/15/20/25/35ns
IDT6168SA
225mW
100pW
IDT6168LA
s431 ac
s431
A95E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA IDT6168LA Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 12/15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 10/12/15/20/25/35ns (max.) • Low power consumption
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OCR Scan
|
IDT6168SA
IDT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
IDT6168LA
20-pin
20pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4Kx 4-BIT IDT6168SA 1DT6168LA Integrated Device Technology, Inc. nology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 10ns are available. The circuit also
|
OCR Scan
|
IDT6168SA
1DT6168LA
12/15/20/25/35/45/55/70/85/100ns
10/12/15/20/25/35ns
IDT6168LA
20-pin
20pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 4K x 4-BIT IDT6168SA IDT6168LA Integrated D evice Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15 /2 0 /2 5 /3 5 /4 5 n s (m ax.) — Com mercial: 15 /20/2 5/35 n s (m ax.) • Low power consumption
|
OCR Scan
|
IDT6168SA
IDT6168LA
20-pin
384-bit
200mV
300mll
P20-1)
D20-1)
|
PDF
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