2N4241
Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C
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OCR Scan
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N4241
OC74
CM601
2N4042
BSV39
2N3523
bc143
BC222 TRANSISTOR
ft06
200S
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PDF
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BC138 TRANSISTOR
Abstract: 2N4043 ME2001 2N1020 2N3523 2N4042 2N4241 BC138 bc143 TLO 61
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PDF
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SLA4312
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD • SLA4312 55E D • 7^0741 00Q122D 2 ^ HSAKJ Silicon NPN Triple Diffused Planar Silicon PNP Epitaxial Planar ■M axim um Ratings Rem oa=25”o JSpTtbQ} NPN PNP Unit C ollector-to-B ase Voltage VCBO 60 -6 0 V C ollector-to-E m itter Voltage
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OCR Scan
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00Q122D
SLA4312
STA300
STA400
45max
SLA4312
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PDF
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SLA6010
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD SLA6010 •M axim um Ratings ' Item i :a 7 ^ 0 7 4 1 0QÜ1E34 flfl3 « S A K J 5SE ]> Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington <Ta=25 C - ;-1-„S ym b o l : NPN PNP Unit Collector-to-B ase Voltage
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OCR Scan
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SLA6010
STA300
STA400
45max
SLA6010
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PDF
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Untitled
Abstract: No abstract text available
Text: S5E D • 7^0741 □ □ □ 1 2 3 b bSb H S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington ■Maximum Ratings era=25-0 tÜ É É i f a l l i i 1* ^ 1 W êÊ S . w - f e iS t iif a s C ollector-to-B ase Voltage
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OCR Scan
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STA300
STA400
45max
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PDF
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SLA8001
Abstract: No abstract text available
Text: |_ S A N K E N ELECTRI^ C ^ ^ T ^ ^ ^ SLA8001 55E T> M 7^0741 GD0124Ö 37fl • SA K J Silicon NPN, PNP Epitaxial Planar ■Maximum Ratings 1 Item da=25C Symbol NPN PNP Unit V Collector-to-Base Voltage VCBO 60 -6 0 Collector-to-Emitter Voltage VCEO 60 -6 0
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OCR Scan
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SLA8001
GD0124Ã
STA300
STA400
45max
SLA8001
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PDF
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BC138 TRANSISTOR
Abstract: 2N4241 BD117 2N4042 BC138 transistor bc138 BC222 TRANSISTOR 2N4043 2N5508 2N5511
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12
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OCR Scan
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diff40V
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
BC138 TRANSISTOR
2N4241
BD117
2N4042
BC138
transistor bc138
BC222 TRANSISTOR
2N4043
2N5508
2N5511
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PDF
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Untitled
Abstract: No abstract text available
Text: SANKEN E L E C T R I C CO LTD SSE D SLA4340 • 7 cn ü 7 4 1 0001254 =134 « S A K J Silicon NPN Triple Diffused Planar Darlington Silicon PNP Epitaxial Planar Darlington ■M axim um Ratings Item rra=2 5 o Symbol PNP SIÄÄf Collector-to-B ase Voltage VCBO
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OCR Scan
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SLA4340
STA300
STA400
45max
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PDF
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2N5508
Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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OCR Scan
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NPN110.
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
2N5508
2N1019
l53b 5
2N4241
BC138
2SJ11
Transistors 2n551
2N3523
2N550
2N551
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PDF
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BD117
Abstract: 2N3523 2N4241 st610 transistor BC138 2N1019 2N4042 2N3942 A520 2N3519
Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12
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OCR Scan
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diff40V
12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
BD117
2N3523
2N4241
st610 transistor
BC138
2N1019
2N4042
2N3942
A520
2N3519
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PDF
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BC138
Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
VCB0-50V;
BC138
2N3520
ST8014
2CY38
BD117
OC74
2N3523
2N4241
BC138 TRANSISTOR
BC222 TRANSISTOR
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PDF
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