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Vishay Semiconductors VS-60APH03L-N3 DIODE GEN PURP 300V 60A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-60APH03L-N3	Tube	221		1	1 $2.85 10 $2.85 100 $2.85 1000 $1.1025 10000 $1.1025	Buy Now
Vishay Semiconductors VS-60APH03-N3 DIODE GEN PURP 300V 60A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-60APH03-N3	Tube	220		1	1 $4.58 10 $4.58 100 $4.58 1000 $2.0375 10000 $2.0375	Buy Now
Vishay Semiconductors VS-60APH03-N-S1 DIODE GEN PURP 300V 60A TO247AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	VS-60APH03-N-S1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VS-60APH03L-N3 Freds - TO-247 (Alt: VS-60APH03L-N3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	VS-60APH03L-N3			10 Weeks	500	1 - 10 - 100 - 1000 $1.07561 10000 $1.03765	Buy Now
Mouser Electronics	VS-60APH03L-N3		1,506			1 $2.84 10 $2.07 100 $1.58 1000 $1.18 10000 $1.12	Buy Now
Newark	VS-60APH03L-N3	Bulk	23		1	1 $2.94 10 $2.5 100 $2.04 1000 $1.88 10000 $1.88	Buy Now
TTI	VS-60APH03L-N3	Tube			500	1 - 10 - 100 - 1000 $1.13 10000 $1.1	Buy Now
TME	VS-60APH03L-N3				1	1 $3.08 10 $2.77 100 $2.2 1000 $1.91 10000 $1.84	Get Quote

EBV Elektronik	VS-60APH03L-N3			11 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies VS-60APH03-N3 Freds - TO-247 - Rail/Tube (Alt: VS-60APH03-N3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	VS-60APH03-N3	Tube		10 Weeks	500	1 - 10 - 100 - 1000 $2.15975 10000 $2.0701	Buy Now
Mouser Electronics	VS-60APH03-N3		5,465			1 $4.57 10 $3.45 100 $2.37 1000 $2.03 10000 $1.99	Buy Now
Newark	VS-60APH03-N3	Bulk			500	1 - 10 - 100 - 1000 $2.33 10000 $2.17	Buy Now
TTI	VS-60APH03-N3	Tube			500	1 - 10 - 100 - 1000 $2.12 10000 $2.04	Buy Now
TME	VS-60APH03-N3		552		1	1 $3.34 10 $2.73 100 $2.15 1000 $1.6 10000 $1.6	Buy Now

EBV Elektronik	VS-60APH03-N3			11 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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60APH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
60aph03 Abstract: VS-60APH03-N3 INL16 60aph 60APH03-N3 Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	PDF	VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60aph03 INL16 60aph 60APH03-N3
60aph03 Abstract: No abstract text available Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	PDF	VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03
60aph03 Abstract: No abstract text available Text: VS-60APH03-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt FEATURES • Hyperfast recovery time • Low forward voltage drop Base cathode • Low leakage current • Soft recovery device • 175 °C operating junction temperature	Original	PDF	VS-60APH03-N3 JEDEC-JESD47 O-247AC VS-60APH03-N3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph03
Untitled Abstract: No abstract text available Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance	Original	PDF	VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
94803 Abstract: 60APH06 Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements SOT-227 • Low drain to case capacitance	Original	PDF	VS-FA40SA50LC OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 94803 60APH06
60APH06 Abstract: VS-GA250SA60S Text: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)	Original	PDF	VS-GA250SA60S OT-227 E78996 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 60APH06 VS-GA250SA60S
Untitled Abstract: No abstract text available Text: VS-GP250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A Proprietary Vishay IGBT Silicon “L Series” FEATURES • Standard speed Trench PT IGBT • Fully isolated package • Very low internal inductance  5 nH typical	Original	PDF	VS-GP250SA60S E78996 OT-227 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft	Original	PDF	VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft	Original	PDF	VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
60aph Abstract: VS-FA72SA50LC Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES SOT-227 PRODUCT SUMMARY • • • • • • • Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements	Original	PDF	VS-FA72SA50LC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 60aph VS-FA72SA50LC
Untitled Abstract: No abstract text available Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device	Original	PDF	VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device	Original	PDF	VS-FA72SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance	Original	PDF	VS-FA40SA50LC OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

Untitled Abstract: No abstract text available Text: VS-GA250SA60S www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 250 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)	Original	PDF	VS-GA250SA60S OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
A 3150 igbt driver Abstract: VS-GT140DA60U 60APH06 Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	VS-GT140DA60U OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A 3150 igbt driver VS-GT140DA60U 60APH06
Untitled Abstract: No abstract text available Text: VS-GT140DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 140 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse	Original	PDF	VS-GT140DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: VS-GB90DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 90 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED anti-parallel diodes with ultrasoft	Original	PDF	VS-GB90DA60U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

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