MSM5117800
Abstract: MSM5117800C SOJ28
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0112-18-42
MSM5117800C
MSM5117800C
152-Word
MSM5117800CCMOS2
42CMOS
28SOJ28TSOP
04832ms
28400milSOJ
SOJ28-P-400-1
MSM5117800
SOJ28
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MSM5117800
Abstract: SOJ28
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2G0043-17-41
MSM5117800B
MSM5117800B
152-Word
MSM5117800BCMOS2
42CMOS
28SOJ28TSOP
04832ms
28400milSOJ
SOJ28-P-400-1
MSM5117800
SOJ28
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TASC 20-5
Abstract: M5M44265CJ M5M44265C-6
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, M5M44265CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S EDO HYPER PAGE MODE 4194304-BIT (262144-WORD 16-BIT) DYNAMIC RAM EDO (HYPER PAGE MODE) 4194304-BIT (262144-WORD BY BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with
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M5M44265CJ
4194304-BIT
262144-WORD
16-BIT)
16-bit
TASC 20-5
M5M44265C-6
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Untitled
Abstract: No abstract text available
Text: HY5117404B,HY5116404B 4Mx4, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
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HY5117404B
HY5116404B
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MSM5416125A
Abstract: No abstract text available
Text: E2L0049-17-Y1 ¡ Semiconductor MSM5416125A ¡ Semiconductor This version: Jan. 1998 MSM5416125A Previous version: Dec. 1996 131,072-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The OKI MSM5416125A is a 128K-word ¥ 16-bit dynamic RAM fabricated in OKI's CMOS silicon
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E2L0049-17-Y1
MSM5416125A
072-Word
16-Bit
MSM5416125A
128K-word
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Untitled
Abstract: No abstract text available
Text: 512K x 8 SRAM MODULE SYS8512FKX - 55/70 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The SYS8512FKX is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line Low Profile package, organised as 512K x 8. The
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SYS8512FKX
605mW
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Untitled
Abstract: No abstract text available
Text: ADS5481 ADS5482 ADS5483 www.ti.com. SLAS565C – JUNE 2008 – REVISED OCTOBER 2009 16-Bit, 80/105/135-MSPS Analog-to-Digital Converters
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ADS5481
ADS5482
ADS5483
SLAS565C
16-Bit,
80/105/135-MSPS
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Untitled
Abstract: No abstract text available
Text: December 2003 AS7C513B 5V 32Kx16 CMOS SRAM Features • Compatible to AS7C513A • Industrial and commercial temperature • Organization: 32,768 words × 16 bits • Center power and ground pins • High speed • 10/12/15/20 ns address access time • 5, 6, 7, 8 ns output enable access time
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AS7C513B
AS7C513A
605mW
44-pin
I/O15
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TC5117800bnt-60
Abstract: TC5117800B
Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5117800BNJ/BNT-60/70
TC5117800BNT
TC5117800bnt-60
TC5117800B
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TC514265DJ
Abstract: TC514265D TC514265 SOJ40-P-400
Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TheTC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TheTC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper
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TC514265DJ/DFT-50/60/70
TheTC514265DJ/DFT
TheTC514265DJ/
TC514265DJ/DFT
TC514265D
J/DFT-50/60/70
DR04041293
TC514265DJ
TC514265
SOJ40-P-400
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51161
HY5116100Ato
9-10-MAY94
HY5116100A
HY5116100AJ
HY5116100ASU
HY5116100AT
HY51161OOASLT
HY5116100AR
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator
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TC5117800BNJ/BNT-60/70
715mW
TC5117800BNT-60)
605mW
TC5117800BNT-70)
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GG41
Abstract: No abstract text available
Text: April 1993 Edition 2.1 FUJITSU DATA S H E E T M B 8 1 8 2 5 1 -70/-80 2097,152 Bits 262,144 x 8 Bits Multi-port CMOS Dynamic RAM The Fujitsu MB818251 is a fully decoded dual port CMOS Dynamic RAM (DRAM) organized as 262,144 words by 8 bits dynamic RAM port and 512 words by 8 bits serial
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MB818251
400mil
40-pin
475mil
44-pin
MB818251
GG41
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Untitled
Abstract: No abstract text available
Text: FUJITSU March 1992 Edition 1.0 DATA SHEET M B 8 1 4 1 O O A -6 0 /-7 0 /-8 0 CMOS 4M x 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 BIT FAST PAGE MODE DYNAMIC RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,804 memory cells in a x1 configuration. The MB814100A features a “fast
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MB814100A
048-bits
MB814100A-60
MB814100A-70
MB814100A-80
26-LEAD
FPT-26P-M02)
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mb8117400
Abstract: No abstract text available
Text: FUJITSU Sepi zeliti Edition 2.0 DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessfcle in 4-bit increments. The MB8117400 features a ’ fast page’ mode of
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MB8117400-60/-70/-80
MB8117400
196-bits
SD-08285-02-93-DS
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5117405
Abstract: No abstract text available
Text: HM5116405 Series HM5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633A
26-pin
ns/70
5117405
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KM418C256/L/SL-7
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its
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KM418C256/L/SL
KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/L/SL-10
130ns
150ns
100ns
180ns
KM418C256/L/SL-7
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM418C256LL 256K x18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM418C256LL is a CMOS high speed 262,144 b it x 18 D ynam ic Random A cce ss M em ory. Its de sig n is o p tim ized fo r high perform ance ap p lica tio n s
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KM418C256LL
KM418C256LL
130ns
KM418C256LL-8
150ns
KM418C256LL-10
100ns
180ns
KM418C256LL-7
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km418c256
Abstract: No abstract text available
Text: KM418C256/USL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM418C256/USL
KM418C256/L/SL
KM418C256/L/SL-7
130ns
KM418C256/Ã
150ns
KM418C256/L/SL-10
100ns
180ns
KM418C256/L/SL
km418c256
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Untitled
Abstract: No abstract text available
Text: SYntaq limited 512K x. 8 SRAM MODULE SYS8512FK-55/70 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +441912930519. FAX +441912590997 Issue 1.5 : May 1996 Description Features The SYS8512FK is plastic 4M Static RAM Module housed in a standard 32 pin Dual-ln-Line package
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SYS8512FK-55/70
605mW
SYS8512FK
SYS8512FKLI-55
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MSM5117180-70
Abstract: MSM5117180-80
Text: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.
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MSM5117180
576-Word
18-Bit
MSM5117180
cycles/32ms
MSM5117180-70
MSM5117180-80
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