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    600V PNP Search Results

    600V PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    600V PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200V to 600V JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature,


    Original     		PDF C106B C106M O-126 O-126

    K 1357

    Abstract: buffered input 5v supply 30v LT1354 LT1355 LT1356 LT1357 LT1360 LT1365 g1432
    Text: LT1357 25MHz, 600V/µs Op Amp U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz Gain-Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads 8nV/√Hz Input Noise Voltage


    Original     		PDF LT1357 25MHz, 25MHz 500nA 120nA 115ns 220ns LT1357 K 1357 buffered input 5v supply 30v LT1354 LT1355 LT1356 LT1360 LT1365 g1432

    K 1358

    Abstract: 130 c g03 LT1354 LT1355 LT1356 LT1357 LT1358 LT1360 LT1365 1358 TRANSISTOR
    Text: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 25MHz Gain Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1358/LT1359 25MHz, 25MHz 500nA 120nA 115ns 220ns LT1357 K 1358 130 c g03 LT1354 LT1355 LT1356 LT1357 LT1358 LT1360 LT1365 1358 TRANSISTOR

    k 1358

    Abstract: 1358 TRANSISTOR datasheet 1358 lt1359cn B 1359 MARKING 1358 LT1354 LT1355 LT1356 LT1357
    Text: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz Gain-Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1358/LT1359 25MHz, 25MHz 500nA 120nA 115ns 220ns k 1358 1358 TRANSISTOR datasheet 1358 lt1359cn B 1359 MARKING 1358 LT1354 LT1355 LT1356 LT1357

    Untitled

    Abstract: No abstract text available
    Text: LT1358/LT1359 Dual and Quad 25MHz, 600V/µs Op Amps FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 25MHz Gain Bandwidth 600V/µs Slew Rate 2.5mA Maximum Supply Current per Amplifier Unity-Gain Stable C-LoadTM Op Amp Drives All Capacitive Loads


    Original     		PDF LT1358/LT1359 25MHz, 25MHz 500nA 120nA 115ns 220ns LT1358 LT1359 14-Pin

    pnp transistor 600V

    Abstract: TSA1765 600v pnp TRANSISTOR 0835
    Text: TSA1765 High Voltage PNP Epitaxial Planar Transistor SOT-223 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -600V BVCEO -560V IC -150mA VCE SAT Features ● ● Ordering Information Low Saturation Voltages High Breakdown Voltage Part No.


    Original     		PDF TSA1765 OT-223 -600V -560V -150mA -50mA -10mA TSA1765CW pnp transistor 600V TSA1765 600v pnp TRANSISTOR 0835

    Untitled

    Abstract: No abstract text available
    Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.


    Original     		PDF SFT5094-4 200oC SFT5015. 100oC 10MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.


    Original     		PDF SFT5094/5 200oC SFT5015. 100oC 10MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: SFT5094-4 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.


    Original     		PDF SFT5094-4 200oC SFT5015. 100oC 100mA; 10MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C J D High Voltage : VCEO=-600V. High Speed Switching Time. 1.0 s IC=-0.5A B : tf Low Collector Emitter Saturation Voltage.


    Original     		PDF KTA1807D/L -600V. -60mA)

    Untitled

    Abstract: No abstract text available
    Text: SFT5094/5 SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1 AMP 600 VOLTS HIGH VOLTAGE PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • BVCER to 600V.


    Original     		PDF SFT5094/5 200oC SFT5015. 2N5094 100oC 10MHz 100mA

    KTA1807D

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1807D/L TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. A FEATURES I C High Voltage : VCEO=-600V. J : tf D High Speed Switching Time. B 1.0 s IC=-0.5A Low Collector Emitter Saturation Voltage.


    Original     		PDF KTA1807D/L -600V. -60mA) 150PULSE) KTA1807D

    600B

    Abstract: TS420-B
    Text: TS420-B  SENSITIVE SCR FEATURES IT RMS =4A VDRM/VRRM = 400 or 600V IGT < 200µA A DESCRIPTION A The TS420-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.


    Original     		PDF TS420-B TS420-B 600B

    TR0007A

    Abstract: STX6905 STX7905 pnp transistor 600V transistor A 562
    Text: PRELIMINARY STX6905 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 1 AMP 600 VOLTS PNP TRANSISTOR DESIGNER'S DATA SHEET FEATURES: • • • • • • BVCBO 600V. Fast Switching. Low Leakage.


    Original     		PDF STX6905 200oC STX7905. 20uADC) 600VDC) 25mADC, 50mADC 10VDC, 30VDC TR0007A STX6905 STX7905 pnp transistor 600V transistor A 562

    G C106B1

    Abstract: C106D1 C106A1 C106B1 C106C1 C106E1 C106M1
    Text: DATA SHEET C106A1 THRU C106M1 SILICON CONTROLLED RECTIFIER 100V to 600V JEDEC TO-202 CASE DESCRIPTION The Central Semiconductor C106A1 Series are PNPN Silicon Controlled Rectifiers designed for applications such as temperature, light, speed control, process and remote control, and warning systems where reliability of


    Original     		PDF C106A1 C106M1 O-202 C106B1 C106C1 C106D1 G C106B1 C106E1 C106M1

    Untitled

    Abstract: No abstract text available
    Text: TS820-B  SENSITIVE SCR FEATURES IT RMS = 8A VDRM/VRRM = 400 to 600V IGT < 200µA A DESCRIPTION A The TS820-B series of SCR use a high performance TOPGLASS PNPN technology. The parts are intended for general purpose applications using surface mount technology.


    Original     		PDF TS820-B TS820-B

    Untitled

    Abstract: No abstract text available
    Text: r r u t m . _ TECHNOLOGY 25MHz, 600V/tis Op Amp KOTURCS DCSCMPTIOÍ1 • 25MHz Gain-Bandwidth ■ 600V/|iS Slew Rate ■ 2.5mA Maximum Supply Current The LT1357 is a high speed, very high slew rate opera­ tional amplifier with outstanding AC and DC performance.


    OCR Scan     		PDF 25MHz, 00V/tis 25MHz LT1357 387mW) LT1357 250kHz 200kHz,

    Untitled

    Abstract: No abstract text available
    Text: r r u TECHNOLOGY tm i LT1358/LT1359 Dual and Quad 25MHz, 600V/|lis Op Amps F€fflUR€S DCSCRIPTIOH • 25MHz Gain-Bandwidth ■ 600V/|xs Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad low power high ■ Unity Gain Stable


    OCR Scan     		PDF 25MHz 500nA 120nA 115ns 220ns LT1358/LT1359 25MHz, LT1358/LT1359 LT1358 200mW

    Untitled

    Abstract: No abstract text available
    Text: r j u n LT1358/LT1359 m TECHNOLOGY Dual and Quad 25MHz, 600V/[is O p Amps FCHTURCS D€SCRIPTIOfl • 25MHz Gain-Bandwidth ■ 600V/ xs Slew Rate ■ 2.5mA Maximum Supply Current per Amplifier The LT1358/LT1359 are dual and quad low power high speed operational amplifiers with outstanding AC and DC


    OCR Scan     		PDF LT1358/LT1359 25MHz, LT1358/LT1359 500i2 LT1358 2/500i2 200mW 200mW) LT1358/LT 250kHz

    LT1357CN8

    Abstract: No abstract text available
    Text: _LT1357 r r u r m TECH N O LO G Y 25MHz, 600V/ is O p Am p F€RTUR€S DCSCRIPTIOfl • 25MHz Gain-Bandwidth ■ 600V/ns Slew Rate ■ 2.5mA Maximum Supply Current The LT1357 is a high speed, very high slew rate opera­ tional amplifier with outstanding AC and DC performance.


    OCR Scan     		PDF LT1357 25MHz, LT1357 LT1357CS8 120S2 387mW 387mW) 250kHz LT1357CN8

    Untitled

    Abstract: No abstract text available
    Text: r r u u m _ TECHNOLOGY DCSCRIPTIOÍ1 FEATURES • 2 5 M H z G a in Band w idth ■ 600V/ _is S le w Rate ■ 2 . 5 m A M a x im u m S u p p ly Current ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz, 600V/,us O p Am p


    OCR Scan     		PDF 25MHz, LT1357 200kHz, 250kHz R61AT6D LT1358/LT1359 LT1360 LT1361/LT1362 50MHz,

    pnp transistor 600V

    Abstract: KTA1716 600v pnp switching 600V PNP
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching.


    OCR Scan     		PDF KTA1716 -600V -300mA, -60mA) -600V, 100mA --300mA, -60mA pnp transistor 600V KTA1716 600v pnp switching 600V PNP

    Untitled

    Abstract: No abstract text available
    Text: r r u u m i _ TEC H N O LO G Y DCSCRIPTIOÍ1 FEATURES • 2 5 M H z G a in Band w idth ■ 600V/us S le w Ra te ■ 2 . 5 m A M a x im u m S u p p ly Current ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 25MHz, 600V/|is O p Am p


    OCR Scan     		PDF 00V/us 500nA 120nA 115ns 220ns 250kHz R61AT6D LT1358/LT1359 25MHz, 00V/ns

    pnp transistor 600V

    Abstract: 600V PNP
    Text: SEMICONDUCTOR TECHNICAL DATA KTA1716 EPITAXIAL PLANAR PNP TRANSISTOR HIGH-VOLTAGE SWITCHING TRANSISTOR TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage. : VCeo=-600V • Low V cE sat (Typ. -0.25V) • Fast Switching. • Wide SOA. ( I c = -300mA,


    OCR Scan     		PDF -600V KTA1716 -300mA, -60mA) 100mA -60mA -50mA pnp transistor 600V 600V PNP