5SMY 12J1721
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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12J1721
CH-5600
5SMY 12J1721
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5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
Text: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance
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3600E170300
C9113
CH-5600
5SLA 3600E170300
5SYA2039
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power
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1200G330100
5SYA1563-00
CH-5600
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dt 92 abb
Abstract: 5SMX12L2510
Text: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol
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12L2510
5SYA1664-02
CH-5600
dt 92 abb
5SMX12L2510
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5SYA2020
Abstract: tc 106-10
Text: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 2800 793 1246 10.6x103 1.024 0.51 V A A A V mΩ Phase Control Thyristor 5STP 08D2801 Doc. No. 5SYA1060-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications
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08D2801
5SYA1060-01
08D2801
08D2601
08D2401
5SYA2020
5SYA2034
CH-5600
5SYA2020
tc 106-10
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ABB thyristor 5
Abstract: A110 B110 C110
Text: VSM IT AV M IT(RMS) ITSM VT0 rT = = = = = = 5200 V 1980 A 3100 A 42x10 A 1.06 V 0.219 mΩ Ω Bi-Directional Control Thyristor 5STB 25U5200 Preliminary Doc. No. 5SYA1038-02 Jul. 03 • Two thyristors integrated into one wafer • Patented free-floating silicon technology
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25U5200
5SYA1038-02
25U5000
25U4600
CH-5600
ABB thyristor 5
A110
B110
C110
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ABB thyristor 5
Abstract: 5SYA2020
Text: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 350 550 4.5x103 1.2 2.3 V V A A A V mΩ Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA1003-04 Oct. 04 • Patented free-floating silicon technology • Low on-state and switching losses
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03X6500
5SYA1003-04
03X6200
03X5800
5SYA2020
5SYA2034
CH-5600
ABB thyristor 5
5SYA2020
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GTO ABB 5SGA 2046
Abstract: IG 2200 19
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J4505
5SYA1204-04
CH-5600
GTO ABB 5SGA 2046
IG 2200 19
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IGCT thyristor ABB
Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and
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06F6010
5SYA1222-05
CH-5600
IGCT thyristor ABB
igct abb
IGCT 3300V
A115
B115
HFBR-1528
HFBR-2528
MTA-156
VT115
IGCT thyristor current max
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IGCT
Abstract: IGCT thyristor ABB igct abb IGCT thyristor current max gct thyristor HFBR-2528
Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 4500 340 2.1 1.8 4.7 2800 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 04D4502 mΩ Ω V Doc. No. 5SYA1224-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs
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04D4502
5SYA1224-03
c1224-03
CH-5600
IGCT
IGCT thyristor ABB
igct abb
IGCT thyristor current max
gct thyristor
HFBR-2528
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1700 V 150 A IGBT Module LoPak4 SPT 5SNS 0150V170100 MARKETING INFORMATION • • • • • Doc. No. 5SYA1532-00 Sep. 01 Low-loss, rugged IGBT SPT chip-set EMC friendly diode with positive temp. coefficient of on-state Low profile compact baseless
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0150V170100
5SYA1532-00
prEN50124-1
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 5500 585 18 4.5 1.3 3300 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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08H6005
5SYA1116-01
CH-5600
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ws dvd 290
Abstract: ws dvd 290* transistor
Text: VSM = 5200 V ITAVM = 1800 A ITRMS = 2830 A ITSM = 29000 A VT0 = 1.02 V rT = 0.320 mΩ Ω Bi-Directional Control Thyristor 5STB 17N5200 Doc. No. 5SYA1036-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology
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17N5200
5SYA1036-03
17N5000
17N4600
17Woff
18Woff
CH-5600
ws dvd 290
ws dvd 290* transistor
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high current Thyristor
Abstract: ABB Thyristor 07Z1201 ABB thyristor 5 thyristor switch thyristor TD 42
Text: VRRM VDRM IPULSE VDcmax = 11.8 kV = 11.8 kV = 60 kA = 10 kV High Voltage High Current Thyristor Switch for Pulsed Power Applications 5STF 07Z1201 Doc. No. 5SYA 01PP-01 Oct. 01 • • • • • • • Features Multichip Design with 4 Wafers in Series For Single Pulse Applications
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07Z1201
01PP-01
CH-5600
high current Thyristor
ABB Thyristor
07Z1201
ABB thyristor 5
thyristor switch
thyristor TD 42
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5STP21F1200
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1400 V 1960 A 3080 A 25000 A 0.75 V 0.157 mΩ Ω Phase Control Thyristor 5STP 21F1400 Doc. No. 5SYA1023-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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21F1400
5SYA1023-04
21F1400
21F1200
21F0800
CH-5600
5STP21F1200
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c 30275
Abstract: 03A1600 5STP 03A1200
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 325 A 510 A 5000 A 0.89 V 0.850 mΩ Ω Phase Control Thyristor 5STP 03A1800 Doc. No. 5SYA1032-01 Sep. 01 • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking
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03A1800
5SYA1032-01
03A1800
03A1600
03A1200
CH-5600
c 30275
5STP 03A1200
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5STP18H4200
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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18H4200
5SYA1046-02
18H4200
18H4000
18H3600
CH-5600
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IGCT
Abstract: ka2 DIODE igct abb 11ka
Text: VRSM = 5200 V IFAVM = 810 A IFRMS = 1270 A IFSM = 10.5 kA VF0 = 0.90 V rF = 0.600 mΩ Ω Rectifier Diode 5SDD 08D5000 Target specification Doc. No. 5SYA1165-00 Sep. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number
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08D5000
5SYA1165-00
08D4800
08D4400
CH-5600
IGCT
ka2 DIODE
igct abb
11ka
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 1400 25 1.2 0.32 2200 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with low DC link
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14H4505
5SYA1110-02
CH-5600
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5STP34N5200
Abstract: No abstract text available
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.160 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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34N5200
5SYA1002-03
34N5200
34N5000
34N4600
CH-5600
5STP34N5200
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11f250
Abstract: 11f25 22106
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 950 21 1.2 0.38 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 11F2501 Doc. No. 5SYA1113-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters
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11F2501
5SYA1113-04
CH-5600
11f250
11f25
22106
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5STP45N2800
Abstract: ABB thyristor 5 ka 75000 45N2800
Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 5080 A 7970 A 75000 A 0.86 V 0.070 mΩ Ω Phase Control Thyristor 5STP 45N2800 Doc. No. 5SYA1007-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications
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45N2800
5SYA1007-03
45N2800
45N2600
45N2200
CH-5600
5STP45N2800
ABB thyristor 5
ka 75000
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 810 24 2.42 1.1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Sep. 01 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4502
5SYA1115-03
CH-5600
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ABB Thyristor
Abstract: high current Thyristor 5STF 07Z1350 ABB thyristor 5 abb 5stf
Text: VRRM VDRM IPULSE VDcmax = 13.5 kV = 13.5 kV = 60 kA = 12 kV High Voltage High Current Thyristor Switch for Pulsed Power Applications 5STF 07Z1350 Doc. No. 5SYA 02PP-01 Oct. 01 • • • • • • • Features Multichip Design with 4 Wafers in Series For Single Pulse Applications
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07Z1350
02PP-01
CH-5600
ABB Thyristor
high current Thyristor
5STF 07Z1350
ABB thyristor 5
abb 5stf
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