Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    5BM TRANSISTOR Search Results

    5BM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5BM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vc 3842

    Abstract: transistor 5BM
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.


    Original     		PDF AZ3842B/3B/4B/5B AZ3842B/3B/4B/5B AZ384XA AZ384XB vc 3842 transistor 5BM

    transistor 5BM

    Abstract: st 3844b 5bm Marking 3842 PWM power supply application note 5bm transistor AZ3842B 4800 power mosfet 5Bp marking AZ3842 3844b
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER AZ3842B/3B/4B/5B General Description Features The AZ3842B/3B/4B/5B are high performance fixed frequency current-mode PWM controller series. The difference between AZ384XA and AZ384XB is that they have different start-up currents.


    Original     		PDF AZ3842B/3B/4B/5B AZ384XA AZ384XB transistor 5BM st 3844b 5bm Marking 3842 PWM power supply application note 5bm transistor AZ3842B 4800 power mosfet 5Bp marking AZ3842 3844b

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Pb-Free package is available LMBD6100LT1G ANODE 1 3 CATHODE 2 ANODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value


    Original     		PDF LMBD6100LT1G 236AB)

    MMBD6100LT1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 3 2 ANODE 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc


    Original     		PDF MMBD6100LT1/D MMBD6100LT1 236AB) MMBD6100LT1

    5bm Marking

    Abstract: MIC2295 CDRH4D18 LQH32CN4R7M23 MIC2295BD5 MIC2295BML MIC2295YD5 MIC2295YML MIC6211
    Text: MIC2295 High Power Density 1.2A Boost Regulator General Description Features The MIC2295 is a 1.2Mhz, PWM dc/dc boost switching regulator available in low profile Thin SOT23 and 2mm x 2mm MLF package options. High power density is achieved with the MIC2295’s


    Original     		PDF MIC2295 MIC2295 M9999-052402 5bm Marking CDRH4D18 LQH32CN4R7M23 MIC2295BD5 MIC2295BML MIC2295YD5 MIC2295YML MIC6211

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    transistor 5BM

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current


    Original     		PDF MMBD6100LT1 236AB) DEVICE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor 5BM BC237

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Reverse Voltage Rating Vr 70 Vdc Forward C urrent if 200 m A dc *FM surqel 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W *C Ro ja 556 ;c / w pd 300 mW 2.4 mW/°C Ro ja 417 °C'W TJ ' Tstq - 5 5 to +150 3C Peak Forw ard Surge C urrent


    OCR Scan     		PDF MMBD6100LT1 OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: M A X IM U M RA TIN G S EACH DIODE Rating Unit Sym bol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc •FM(surae) 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mwrc RflJA 556 x /w Pd 300 mW 2,4 mwrc 3 RflJA 417 °C/W Cathode Tj. Tstq - 55 to +150


    OCR Scan     		PDF MMBD6100LT1 OT-23 O-236AB) 12bJC

    BUK444

    Abstract: BUK444-800A BUK444-800B YA11
    Text: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK444-800A/B OT186 BUK444 -800A -800B BUK444-800A BUK444-800B YA11

    sick wl 33

    Abstract: transistor 5BM LA 2785 sick WL sick wl 4G-2 2F330
    Text: P R O D U C T I N F O R M A T I O N Photoelectric Reflex Switch WL 4C-1 for Transparent Objects WL 4G-2 Range 1.6 m Fe a tu res: • Detection of glass, transparent foils • Red ¡ight sender LED to assist with setting-up • Polarisation filter which enables


    OCR Scan     		PDF 110th sick wl 33 transistor 5BM LA 2785 sick WL sick wl 4G-2 2F330

    transistor 5BM

    Abstract: BUK443 BUK443-60A BUK443-60B
    Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In


    OCR Scan     		PDF 0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B

    BD6100LT1

    Abstract: 24l SOT-23
    Text: MOTOROLA Order this document by m m bd61oolti/d SEMICONDUCTOR TECHNICAL DATA M o n o lith ic Dual S w itching Diode 3 o -T T CATHODE W M M B D 6100L T 1 ANODE O 1 ° 2 ANODE % 1 MAXIMUM RATINGS EACH DIODE 2 Rating Symbol Value Unit Reverse Voltage VR 70


    OCR Scan     		PDF bd61oolti/d 6100L OT-23 O-236AB) MMBD6100LT1/D BD6100LT1 24l SOT-23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA M o n o lithic Dual S w itching Diode MMBD6 1 0 0 LT1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage vR Vdc Forward Current if mAdc iFM(surge) 70 200


    OCR Scan     		PDF MMBD6100LT1/D OT-23 O-236AB)

    3845 48V to 12V buck boost converter

    Abstract: ua 3843 38C44
    Text: MIC38C42/3/4/5 BMM BiCMOS Current-Mode PWM Controller Preliminary Information General Description Features The MIC38C4x is a fixed frequency, high performance, current-mode PWM controller. This improved BiCMOS de­ vice is pin compatible with 384x bipolar devices but in the


    OCR Scan     		PDF MIC38C42/3/4/5 MIC38C4x 60fiA MIC38C42/3/4/5BMM 3845 48V to 12V buck boost converter ua 3843 38C44

    SA5209N

    Abstract: hy 214 pin configuration 1K variable resistor schematics c band power supply satellite receiver VGA fiber NE5209 NE5209D NE5209N SA5209D mini circuits vga
    Text: Product specification Philip* Semiconductors RF Communications Products Wideband variable gain amplifier NE/SA5209 PIN CONFIGURATION DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has


    OCR Scan     		PDF NE/SA5209 NE5209 NE5209s 711002t. AMP10101 /NE5219SO/DNB August20 SA5209N hy 214 pin configuration 1K variable resistor schematics c band power supply satellite receiver VGA fiber NE5209D NE5209N SA5209D mini circuits vga

    LT 1153

    Abstract: No abstract text available
    Text: /Turm LTC1153 T E C H N O LO G Y Auto-Reset Electronic Circuit Breaker FCRTURCS DCSCRIPTIOH • Programmable Trip Delay: 15ns to >100ms The LTC1153 electronic circuit breaker drives a low cost ■ Programmable Trip Current: 1 mA to >20A N-channel MOSFET to interrupt power to a sensitive


    OCR Scan     		PDF LTC1153 100ms LTC1153 74C193 ITC1153 1N4148 47jiF LT 1153

    F61C

    Abstract: transistor KA F6 1303 HP 5004a N1134 fu22 Transistor TT 2144 woodward 8290 MIL-STD-806B 8858101 NISSEI AH capacitors
    Text: Model 5004A Service SECTION VIII SERVICE 8-1. INTRODUCTION 8-2. This section provides safety considerations, logic symbols, troubleshooting procedures, block diagram and description, circuit theory, component location photos, and schematic dia­ gram service information .


    OCR Scan     		PDF C338-9467 F61C transistor KA F6 1303 HP 5004a N1134 fu22 Transistor TT 2144 woodward 8290 MIL-STD-806B 8858101 NISSEI AH capacitors

    M37220M3-XXXSP

    Abstract: No abstract text available
    Text: MITSUBISHI MICROCOMPUTERS M37220M3-XXXSP SINGLE-CHIP 8-BIT CM O S MICROCOMPUTER for VOLTAGE SYNTHESIZER with ON-SCREEN DISPLAY CONTROLLER DESCRIPTION The M37220M3-XXXSP Is a single-chip microcomputer designed with PIN CONFIGURATION TOP VIEW CMOS silicon gate technology. It is housed in a 42-pin shrink plastic


    OCR Scan     		PDF M37220M3-XXXSP M37220M3-XXXSP 42-pin -P52/R P54/B P55/OUT

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


    OCR Scan     		PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175