MDS70
Abstract: 1030MHz-1090MHz 1030mhz
Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor
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MDS70
1090MHz
MDS70
25oC2
1030MHz-1090MHz
1030mhz
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Untitled
Abstract: No abstract text available
Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor
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MDS70
1090MHz
MDS70
25oC2
150oC
200osite
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Untitled
Abstract: No abstract text available
Text: MDS70 70 Watts, 50 Volts, Pulsed Avionics 1030 - 1090MHz GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The MDS70 is a COMMON BASE bipolar transistor. It is designed for MODE S pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor
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MDS70
1090MHz
MDS70
25oC2
1030MHz
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BZX55C 18 EQUIVALENT
Abstract: BZX55C 27 equivalent LITE-ON 18 pin BZX55C BZX55C 10 equivalent BZX55C 9V1 1 diode zener 3v6 dip
Text: BZX55C2V0 THRU BZX55C75 REVERSE VOLTAGE – 2.0 to 75 Volts POWER DISSIPATION – 0.5 Watts DO-35 Hermetically Sealed Glass Zener Voltage Regulators FEATURES • Zener Voltage Range 2.0 to 75 Volts • DO-35 Package JEDEC • Through-Hole Device Type Mounting
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BZX55C2V0
BZX55C75
DO-35
DO-35
BZX55C 18 EQUIVALENT
BZX55C 27 equivalent
LITE-ON 18 pin
BZX55C
BZX55C 10 equivalent
BZX55C 9V1 1
diode zener 3v6 dip
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Untitled
Abstract: No abstract text available
Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
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j329
Abstract: J3-29 duroid 5880 20AWG TPR400A J251
Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low
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TPR400A
TPR400A
25oC2
150oC
200oC
20AWG,
10mils
j329
J3-29
duroid 5880
20AWG
J251
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10AM11
Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Text: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM11
10AM11
to1000
08.24.35
ic sheet data 9847
9508
ic 4521
90436
130-047
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TRANSISTOR Z4
Abstract: Z227 transistor Z2 443l transistor z5 0912 Transistor z1 Z1 Transistor transistor DF 50 BVces
Text: 0912-45 45 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-45 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
100mil)
68mfd,
TRANSISTOR Z4
Z227
transistor Z2
443l
transistor z5
0912
Transistor z1
Z1 Transistor
transistor DF 50
BVces
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ic 74682
Abstract: 160852 085016 74682 8813 40507 10AM05 44050-7 172113 E+170968
Text: 10AM05 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10AM05
10AM05
ic 74682
160852
085016
74682
8813
40507
44050-7
172113
E+170968
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DME 40
Abstract: No abstract text available
Text: DME 375 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION The DME 375 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
DME 40
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55c12 zener diode
Abstract: 55c15 zener diode 55c12 diode 55C15 Diode 55C2V4 55C4V3 55C6V2 55C3V0 55c3v9
Text: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C
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DO-35
DO-204AH)
BZX55C2V4
BZX55C91
55c12 zener diode
55c15 zener diode
55c12 diode
55C15 Diode
55C2V4
55C4V3
55C6V2
55C3V0
55c3v9
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J329 transistor
Abstract: 20AWG TPR400A j302
Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The 60198 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal
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TPR400A
25oC2
150oC
200oC
20AWG,
10mils
J329 transistor
20AWG
TPR400A
j302
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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tpr-175
Abstract: C-388
Text: TPR 175 175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
tpr-175
C-388
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TPR500
Abstract: No abstract text available
Text: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
TPR500
TPR500
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z3 transistor
Abstract: TRANSISTOR Z4 Z1 Transistor transistor z5 Transistor z1 transistor z3
Text: 0912-25 25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-25 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
100mil)
z3 transistor
TRANSISTOR Z4
Z1 Transistor
transistor z5
Transistor z1
transistor z3
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1920AB25
Abstract: No abstract text available
Text: 1920AB25 25 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB25 is a COMMON EMITTER transistor capable of providing 25 Watts of Class AB, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS
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1920AB25
1920AB25
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TPR400
Abstract: max7540
Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
TPR400
TPR400
max7540
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Untitled
Abstract: No abstract text available
Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance
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C-388
Abstract: No abstract text available
Text: TPR 175 175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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C-388
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transistor z5
Abstract: 027w TRANSISTOR Z4 Transistor z1 10KW
Text: 0912-7 7 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The 0912-7 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low thermal resistance
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25oC2
12mfd,
transistor z5
027w
TRANSISTOR Z4
Transistor z1
10KW
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Untitled
Abstract: No abstract text available
Text: Dnc. J.£.ii£,u TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TPR175 175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is
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TPR175
1090MHz
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Untitled
Abstract: No abstract text available
Text: DME 375 Q |,jj TECHNOLOGY 375 Watts, 5 0 V olts, Pulsed A vionics 1025-1150 M H z «FMio>owAvt siliconPowe»T»*H»iîToiii GENERAL DESCRIPTION CASE OUTLINE 55CX, STYLE 1 The DME 375 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The
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55C68
Abstract: BZX55C15RL
Text: Licensed b y ON S e m i c o n d u c t o r , a tradem ark of Sem iconductor Com ponents Industries, LLC f o r Zener Te c h n olo gy a n d Products. « in c 5VM 5EM I SE M IC O NDU CTO R 5 0 0 m W D O -35 H erm etically Sealed Glass Zener Voltage Regulators
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BZX55C2V4
55C68
BZX55C15RL
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