Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    54TSOP Search Results

    54TSOP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Text: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604

    K4S281632O

    Abstract: K4S281632O-LL K4S280832O sdram voltage 8Mb samsung SDRAM
    Text: Rev. 1.0, May. 2010 K4S280832O K4S281632O 128Mb O-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S280832O K4S281632O 54TSOP 128Mb A10/AP K4S281632O K4S281632O-LL sdram voltage 8Mb samsung SDRAM

    K4S561632N

    Abstract: samsung k4s561632n
    Text: Rev. 1.0, May. 2010 K4S561632N 256Mb N-die SDRAM Industrial 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S561632N 256Mb 54TSOP A10/AP K4S561632N samsung k4s561632n

    K4S281632O

    Abstract: No abstract text available
    Text: Rev. 1.02, Oct. 2010 K4S281632O 128Mb O-die SDRAM Industrial 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S281632O 54TSOP 128Mb A10/AP K4S281632O

    CY14B101LA-SZ45XI

    Abstract: CY14B101LA-SZ25XI
    Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small


    Original     		PDF CY14B101LA CY14B101NA 8/64K CY14B101LA/CY14B101NA CY14B101LA-SZ45XI CY14B101LA-SZ25XI

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    K4S281632F

    Abstract: m464s1724f K4S281632
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FT59 8Mx16 K4S281632F m464s1724f K4S281632

    Untitled

    Abstract: No abstract text available
    Text: TVP5160EVM User’s Guide SLEU063 – March 2005 TVP5160EVM User’s Guide Digital Video Department 1 2 3 4 5 6 7 8 9 10 Contents Functional


    Original     		PDF TVP5160EVM SLEU063

    PPAP level submission requirement table

    Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
    Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage


    Original     		PDF

    HY57W2A1620HCT

    Abstract: No abstract text available
    Text: HY5W2A6C L/S F-F / HY57W2A1620HC(L/S)T-F HY5W26CF-F / HY57W281620HCT-F 4Banks x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 0.3 1. Datasheet separation (Normal & Low Power) 2. Page2 ~ Page23 : Part Number Change HY5W26CF -> HY5W2A6CF


    Original     		PDF HY57W2A1620HC HY5W26CF-F HY57W281620HCT-F 16bits Page23 HY5W26CF HY57W281620HCT HY57W2A1620HCT Page18 Page24 HY57W2A1620HCT

    Untitled

    Abstract: No abstract text available
    Text: CY14B104K, CY14B104M 4-Mbit 512 K x 8/256 K × 16 nvSRAM with Real Time Clock 4-Mbit (512 K × 8/256 K × 16) nvSRAM with Real Time Clock Features • 25 ns and 45 ns access times ■ Internally organized as 512 K × 8 (CY14B104K) or 256 K × 16 (CY14B104M)


    Original     		PDF CY14B104K, CY14B104M 44-pin 54-pin CY14B104K) CY14B104M)

    Untitled

    Abstract: No abstract text available
    Text: CY14B108L CY14B108N 8-Mbit 1024 K x 8/512 K × 16 nvSRAM 8-Mbit (1024 K × 8/512 K × 16) nvSRAM Features • Packages ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-ball fine-pitch ball grid array (FBGA) Pb-free and restriction of hazardous substances (RoHS)


    Original     		PDF CY14B108L CY14B108N CY14B108L) CY14B108N) 44-/54-pin 48-ball

    m464s64* samsung

    Abstract: K4S560832E K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit m464s64* samsung K4S560832E K4S561632E

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC Revision 1.2 March 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 March 2004


    Original     		PDF 128MB 144pin 64-bit M464S0924FTS-C M464S1724FTS-C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B116K/CY14B116M 16-Mbit 2048 K x 8/1024 K × 16 nvSRAM with Real Time Clock Features Functional Description • The Cypress CY14B116K/CY14B116M combines a 16-Mbit nvSRAM with a full-featured RTC in a monolithic integrated circuit. The nvSRAM is a fast SRAM with a nonvolatile element


    Original     		PDF CY14B116K/CY14B116M 16-Mbit CY14B116K/CY14B116M

    cy14b108n

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on power down with only a small


    Original     		PDF CY14B108L, CY14B108N 1024K 8/512K CY14B108L) CY14B108N) 48-ball 44-pin 54-pin cy14b108n

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104K, CY14B104M 4 Mbit 512K x 8/256K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16


    Original     		PDF CY14B104K, CY14B104M 8/256K CY14B104K) CY14B104M) 54-pin

    Untitled

    Abstract: No abstract text available
    Text: CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S PRELIMINARY 16-Mbit 2048 K x 8/1024 K × 16/512 K × 32 nvSRAM Features • ■ 16-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25-ns, 30-ns and 45-ns access times ❐ Internally organized as 2048 K × 8 (CY14X116L),


    Original     		PDF CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S 16-Mbit 16-Mbit 25-ns, 30-ns 45-ns CY14X116L) CY14X116N) CY14X116S)

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    K4S561632J

    Abstract: m464s64* samsung K4S560832J
    Text: 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb J-die 54 TSOP-II/sTSOP II with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 256MB, 512MB 144pin 256Mb 32Mx8 K4S560832J K4S561632J m464s64* samsung K4S560832J

    BGA OUTLINE DRAWING

    Abstract: mr4a16bmys351
    Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package


    Original     		PDF MR4A16B 20-years AEC-Q100 MR4A16B 216-bit MR4A16B, EST352 BGA OUTLINE DRAWING mr4a16bmys351

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY14B104KA, CY14B104MA 4 Mbit 512K x 8/256K x 16 nvSRAM with Real-Time-Clock Features • Watchdog timer ■ 20 ns, 25 ns, and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 512K x 8 (CY14B104KA) or 256K x 16


    Original     		PDF CY14B104KA, CY14B104MA 8/256K 54-pin CY14B104KA) CY14B104MA)