VF10BUS
Abstract: A17511
Text: VF10BUS 注文コード No. N A 1 7 5 1 三洋半導体データシート N VF10BUS 1 Channel EMI Filter with ESD Protection 特長 ・ EMI Filter 1 channel 対応 fc=530MHz ・ IEC61000-4-2 にて接触放電 8kV 保証 ・ 超小型・薄型パッケージ (1.0mm x 0.6mm × 0.27mm) ・ ハロゲンフリー対応
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VF10BUS
530MHz)
IEC61000-4-2
150pF,
IT15564
IT15364
IT15565
IT15566
VF10BUS
A17511
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complementary symmetry amplifier 2-30 MHz ssb driver applications
Abstract: 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409
Text: LTC5584 30MHz to 1.4GHz IQ Demodulator with IIP2 and DC Offset Control Description Features I/Q Bandwidth of 530MHz or Higher n High IIP3: 31dBm at 450MHz, 28dBm at 900MHz n High IIP2: 70dBm at 450MHz, 65dBm at 900MHz n User Adjustable IIP2 to >80dBm n User Adjustable DC Offset Null
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530MHz
31dBm
450MHz,
28dBm
900MHz
70dBm
65dBm
80dBm
complementary symmetry amplifier 2-30 MHz ssb driver applications
513-MHz
MGA-633P8
AT224-1
k 3366 57
LTC5584
LTC5588-1
LTC6409
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rd70huf2
Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
Text: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF
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RD70HUF2
175MHz,
530MHz,
RD70HUF2
75Wtyp,
530MHz
84Wtyp,
175MHz
RD70 HUF2
RD70HUF
w18 transistor
MITSUBISHI RF POWER MOS FET rd70
2x500mA
AN-VHF-049
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M68732EH
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY
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M68732EH
520-530MHz,
17dBm
520MHz
530MHz
M68732EH
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Untitled
Abstract: No abstract text available
Text: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)
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VF10BUS
ENA1751
530MHz)
IEC61000-4-2)
A1751-3/3
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mitsubishi L200
Abstract: c14 fet
Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)
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RD35HUF2
175MHz,
530MHz,
43Wtyp,
530MHz
45Wtyp,
175MHz
mitsubishi L200
c14 fet
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transistor W66
Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)
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RD35HUF2
175MHz,
530MHz,
RD35HUF2
43Wtyp,
530MHz
45Wtyp,
175MHz
Oct2011
transistor W66
w18 transistor
TRANSISTOR ML1
transistor w18 57 small
W08 transistor
transistor w08
405MHz
mitsubishi L200
transistor marking w08
TRANSISTOR w18
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HA5022
Abstract: HA5022EVAL HFA1205 HFA1245 HFA1245IB HFA1245IP
Text: HFA1245 S E M I C O N D U C T O R Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current. . . . . . . . . . . . . . . . 5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary
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HFA1245
530MHz,
HFA1245
-73dB
HA5022
HA5022EVAL
HFA1205
HFA1245IB
HFA1245IP
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RD70 HUF2
Abstract: W105 TRANSISTOR ML1 RD70HUF2
Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF
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RD70HUF2
175MHz,
530MHz,
RD70HUF2
RD70 HUF2
W105
TRANSISTOR ML1
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VF10BUS
Abstract: No abstract text available
Text: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)
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VF10BUS
ENA1751
530MHz)
IEC61000-4-2)
A1751-3/3
VF10BUS
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177J
Abstract: MOS 3020 RD35HUF2 w18 transistor
Text: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON
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RD35HUF2
175MHz,
530MHz,
RD35HUF2
43Wtyp,
530MHz
45Wtyp,
175MHz
177J
MOS 3020
w18 transistor
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rd70huf2
Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION
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RD70HUF2
175MHz,
530MHz,
RD70HUF2
75Wtyp,
530MHz
84Wtyp,
175MHz
Oct2011
RD70 HUF2
MITSUBISHI RF POWER MOS FET rd70
Mitsubishi Plastics
RD70HUF
transistor c33
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Untitled
Abstract: No abstract text available
Text: OPA688 OPA 688 OPA 688 For most current data sheet and other product information, visit www.burr-brown.com Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING
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OPA688
530MHz
OPA689
OPA688
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advantage of fm transmitter two stage
Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
Text: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by
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AN277,
AN277
advantage of fm transmitter two stage
audio bluetooth transmitter 3.5mm
AN277
ESD Diodes
Mifare* capacitor inductor
epcos mip i
mobile 3.5mm jack
ESD3V3S
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CDFP3-F14
Abstract: la 4507 HS SMD 5962R9858101VXC HS-1254RH HS9-1254RH-Q
Text: HS-1254RH PRELIMINARY Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable April 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-1254RH is a ±5V, Rad Hard, monolithic, dual, current feedback amplifier that provides highly reliable
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HS-1254RH
MIL-PRF-38535
HS-1254RH
CDFP3-F14
la 4507
HS SMD
5962R9858101VXC
HS9-1254RH-Q
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CDMA450
Abstract: KFX6555FR
Text: SAW FILTER KFX6555FR TECHNICAL DATA SPECIFICATIONS FOR SAW DUPLEXER RF Duplexer for CDMA450 A C B High stability and reliability. No adjustment. Low insertion loss and deep stop band attenuation. DIM MAXIMUM RATINGS A B C D E 3.7 D UNIT Input Signal Level
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KFX6555FR
CDMA450
1700MHz
2000MHz
CDMA450
KFX6555FR
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ADS902
Abstract: No abstract text available
Text: OPA688 OPA 688 OPA 688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV
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OPA688
530MHz
OPA689
OPA688
29pF/foot
RG-58)
ADS902
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Untitled
Abstract: No abstract text available
Text: 1/1 001-02 / 20050303 / e9616_mem_t_s1.fm EMC Components MEM-T Series MEM2012T Type 3-Terminal Filters for Signal Line and DC Power Line SMD FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability.
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MEM2012T
priT35R0T0S1
MEM2012T50R0T0S1
MEM2012T101RT0S1
MEM2012T201RT0S1
70MHz
90MHz
200MHz
400MHz
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Untitled
Abstract: No abstract text available
Text: 1/2 3-terminal Filters(SMD) For Signal Line Conformity to RoHS Directive MEM Series MEM2012T-S1 Type FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, and crosstalk generation is prevented.
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MEM2012T-S1
MEM2012T
MEM2012T201RT0S1
MEM2012T101RT0S1
MEM2012T50R0T0S1
MEM2012T35R0T0S1
MEM2012T25R0T0S1
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Untitled
Abstract: No abstract text available
Text: 579MHz SAW Filter 26MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN57901 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �
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579MHz
26MHz
LBN57901
2002/95/EC)
592MHz)
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vhf high gain transistor
Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
Text: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i
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2SC605
2SC605,
200MHz)
530MHz
2SC606
2SC605
vhf high gain transistor
F VHF amplifier
VHF amplifier circuit
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Untitled
Abstract: No abstract text available
Text: & HFA1245 Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current.5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary
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-73dB
530MHz
HFA1245
530MHz,
HFA1245
HFA124S
1750nm
2330nm
483nm
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Burr-Brown HA-5002
Abstract: KT-350
Text: B U R R -B R O W N OPA688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV
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OPA688
530MHz
OPA689
OPA688
OPA689.
Burr-Brown HA-5002
KT-350
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Untitled
Abstract: No abstract text available
Text: HFA 1245/883 Semiconductor PRELIMINARY Dual, High Speed, Low Power, Video Operational Amplifier with Output Disable Juen 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.
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MIL-STD883
HFA1245/883
HFA1245/883
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