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Microchip Technology Inc 1N5309-TR DIODE CUR REG 100V 3.3MA 500MW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5309-TR	Reel			100	1 - 10 - 100 $16.29 1000 $16.29 10000 $16.29	Buy Now
Ameya Holding Limited	1N5309-TR		129			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc CDLL5309-TR DIODE CUR REG 100V 500MW DO213AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CDLL5309-TR	Reel			100	1 - 10 - 100 $21.92 1000 $21.92 10000 $21.92	Buy Now
onsemi HUF75309T3ST MOSFET N-CH 55V 3A SOT223-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUF75309T3ST	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.31686	Buy Now
Rochester Electronics LLC HUFA75309T3ST MOSFET N-CH 55V 3A SOT223-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUFA75309T3ST	Bulk			807	1 - 10 - 100 - 1000 $0.37 10000 $0.37	Buy Now
onsemi HUFA75309T3ST MOSFET N-CH 55V 3A SOT223-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUFA75309T3ST	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.50991	Buy Now

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5309T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :	Original	5309T 100US 5309T" MIL-STD-130. 824W170 824F036 755W002. 423F006	PDF
Untitled Abstract: No abstract text available Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :	Original	5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023.	PDF
FORM0357 Abstract: MIL-STD-130 Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :	Original	5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023. 08-E1008 MIL-STD-130	PDF
IDT71V67703 Abstract: IDT71V67903 71V67903 Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to	Original	IDT71V67703 IDT71V67903 IDT71V67703/7903 BG119 119BGS IDT71V67703 IDT71V67903 71V67903	PDF
IDT71V67703 Abstract: IDT71V67903 71V67903 Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to	Original	IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903	PDF
71V67903 Abstract: No abstract text available Text: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data	Original	IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903	PDF
IDT71V67703 Abstract: IDT71V67903 71V67903 Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to	Original	IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903	PDF
71V67903 Abstract: No abstract text available Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to	Original	IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 71V67903	PDF
IDT71V67703 Abstract: IDT71V67903 71V67903 Text: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data	Original	IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 IDT71V67703 IDT71V67903 71V67903	PDF
71V67903 Abstract: No abstract text available Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to	Original	IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903	PDF
Untitled Abstract: No abstract text available Text: TERMINATIONS AND RESISTORS HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified	OCR Scan		PDF
5309L Abstract: No abstract text available Text: HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified	OCR Scan		PDF