Untitled
Abstract: No abstract text available
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω
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STW52NK25Z
O-247
2004STMicroelectronics
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w52nk25z
Abstract: STW52NK25Z zener diode - C 10 ST st 0560
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
w52nk25z
STW52NK25Z
zener diode - C 10 ST
st 0560
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W52NK25Z
Abstract: No abstract text available
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
W52NK25Z
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48v 2500w
Abstract: PD78F0511GA-8EU-A PD78F0511GA-8EU multi output switch mode transformer for stb FH02500
Text: 48V 2500W POWER SUPPLY SPECIFICATION REVISION HISTORY REV. EC NO. A 0 0 DESCRIPTION INITIAL RELEASE RESP.ENG DATE NORI MIURA 2/5/2010 Hot-Swap / Redundant Front End Power Supply 2500 WATTS @ 200-240VAC, 1200W@100-120VAC, 47-63 HZ OUTPUT: +48V @ 52A High Line , 25A (Low Line) , +12.5 V STB @ 2.0 A
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200-240VAC,
100-120VAC,
FH02500
28w/in3
FH02500
IEC60950
IEC60950
48v 2500w
PD78F0511GA-8EU-A
PD78F0511GA-8EU
multi output switch mode transformer for stb
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50N03
Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
Text: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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50N035
O-220
50N03
Diode BAY 32
50N035
50N035T
Bay Linear
50N035S
52A32
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39A zener diode
Abstract: SMAJ ZENER DIODE SMAJ4730A
Text: MCC SMAJ4728A THRU SMAJ4764A omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100 Volts Low Zener Impedance
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SMAJ4728A
SMAJ4764A
DO-214AC
Tamb50)
100K/W
200mA:
39A zener diode
SMAJ ZENER DIODE
SMAJ4730A
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39A zener diode
Abstract: 51a zener 46a sma zener diode 46a SMAJ4734A SMAJ4730A
Text: MCC TM Micro Commercial Components SMAJ4728A THRU SMAJ4764A omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Maximum Ratings • • • • • 1 Watt Zener Diode 3.3 to 100 Volts
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SMAJ4728A
SMAJ4764A
DO-214AC
Tamb50)
100K/W
200mA:
39A zener diode
51a zener
46a sma
zener diode 46a
SMAJ4734A
SMAJ4730A
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33A zener diode
Abstract: zener diode 46a
Text: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value
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SMA4728A
SMA4764A
1-Jul-2004
DO-214AC
33A zener diode
zener diode 46a
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zener diode 46a
Abstract: ZENER DIODE IN 47 1W 47A zener diode 54A SMA4754A
Text: SMA4728A THRU SMA4764A PB FREE PRODUCT 1W GLASS PASSIVATED JUNCTION SILICON ZENER DIODE FEATURES ● ● ● ● ● ● ● Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component
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SMA4728A
SMA4764A
MIL-STD-202,
SMA4758A
SMA4759A
SMA4760A
SMA4761A
SMA4762A
SMA4763A
zener diode 46a
ZENER DIODE IN 47 1W 47A
zener diode 54A
SMA4754A
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Untitled
Abstract: No abstract text available
Text: Zener Diodes Surface Mount 1W SML4728A - SMZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free For use in stabilizing and clipping
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SML4728A
SMZ1330A
MIL-STD750,
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Untitled
Abstract: No abstract text available
Text: Zener Diodes Surface Mount 1W SMA4728A - SZ1330A RoHS VZ: 3.3 to 330 V PD: 1 W Features ϥ ϥ ϥ ϥ ϥ ϥ ϥ Glass passivated chip Low leakage Built-in strain relief Low inductance High peak reverse power dissipation Lead Pb -free component For use in stabilizing and clipping
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SMA4728A
SZ1330A
DO-214AC
MIL-STD-750,
SZ1240A
SZ1250A
SZ1270A
SZ1300A
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Untitled
Abstract: No abstract text available
Text: SML4728A – SMZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Low Profile 1.33mm Max. Case Height 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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SML4728A
SMZ1330A
OD-123FL
OD-123FL,
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: 1SMA4728A – SZ1330A 1.0W SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction 1.0W Power Dissipation 3.3V – 330V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference
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1SMA4728A
SZ1330A
SMA/DO-214AC,
MIL-STD-750,
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60N03
Abstract: 60N035 60N035S Bay Linear 60N035T
Text: Bay Linear Linear Excellence 60N035 N-Channel Field Effect Transistor Advance Information Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications
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60N035
O-220
60N03
60N035
60N035S
Bay Linear
60N035T
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5562a
Abstract: marking 13z SMA4742A SMAZ1130A 51a zener 49a sma SMA4740A SMA4757 SMAZ1120A SMA475
Text: SMA47xxA SERIES Surface Mount Device .065 1.65 .049 (1.25) .110 (2.79) .100 (2.54) 0.177 (4.50) 0.157 (3.99) .012 (0.305) .006 (0.152) .090 (2.29) .078 (1.98) .060 (1.52) .030 (0.76) .008 (0.20) .004 (0.10) PRIMARY CHARACTERISTICS .208 (5.28) .194 (4.91)
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SMA47xxA
DO-214AC
UL94V-0
MIL-STD-202,
1V-91V
5562a
marking 13z
SMA4742A
SMAZ1130A
51a zener
49a sma
SMA4740A
SMA4757
SMAZ1120A
SMA475
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Bussman MTH
Abstract: VI-FKE6-CQX 8576V Thermal Fuse 250v 15a
Text: Data Sheet Factorized Power Features • 250W, 500W, 750W, 115/230 Vac • • • • • • • • • • strappable single-phase 1.5, 3, 5 kW, 208 Vac three-phase 20-50 mS holdup UL, CSA, TÜV, VDE, BABT FCC/VDE Class B single-phase FCC/VDE Class A (three-phase)
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115Vac
230Vac
240Vac
115/230Vac
135Vac
270Vac
250Vac,
Bussman MTH
VI-FKE6-CQX
8576V
Thermal Fuse 250v 15a
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12A 250v LITTLEFUSE
Abstract: mth-7 fuse Bussman mth Bussman fuse F4 250V 12A 250v 314 LITTLEFUSE VI-FKE6-CMX 750w VI-FKE6-CQX
Text: 12 1-800-735-6200 Off-Line Front Ends Single or Three Phase Strappable Features • 250W, 500W, 750W, 115/230Vac Strappable Single-Phase ■ 1.5, 3, 5 kW, 208Vac Three-Phase ■ 20-50 mS Holdup ■ UL, CSA, TÜV, VDE, BABT ■ FCC/VDE Class B single-phase
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115/230Vac
208Vac
VI-26X,
VI-260
VI-J60
240Vac
12A 250v LITTLEFUSE
mth-7 fuse
Bussman mth
Bussman
fuse F4 250V
12A 250v 314
LITTLEFUSE
VI-FKE6-CMX
750w
VI-FKE6-CQX
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Untitled
Abstract: No abstract text available
Text: June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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NDP6030L
NDB6030L
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51a zener
Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Text: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
2306C
1SMB5913A
2415S
51a zener
motorola ZENER 39a
10029a
1SMB5917A
6833a
1SMB5914A
Motorola Zener
1SMB5915A
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Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
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b34 diode
Abstract: DIODE B34 B34 transistor DIODE ON SEMICONDUCTOR B34 NDB6030L B34 ZENER DIODE NDP6030L mjj transistor DIODE on B34
Text: Nationa I Semiconductor" June 1996 NDP6030L/ NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancem ent m ode pow er field effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS
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June1996
NDP6030L/NDB6030L
G04D251
b34 diode
DIODE B34
B34 transistor
DIODE ON SEMICONDUCTOR B34
NDB6030L
B34 ZENER DIODE
NDP6030L
mjj transistor
DIODE on B34
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P6030L
Abstract: 52A zener
Text: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's
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June1996
NDP6030L
NDB6030L
P6030L
52A zener
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Transorb
Abstract: No abstract text available
Text: <u^- VICOR Off-Line Front Ends Single or Three Phase Strappable Features • 250W, 500W, 750W, 115/230 Vac Strappable Single-Phase ■ 1.5,3, 5 kW, 208 Vac Three-Phase ■ 20-50 mS Holdup ■ UL, CSA, TUV, VDE, BABT ■ FCC/VDE Class B single-phase ■ FCC/VDE Class A (three-phase)
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VI-26X,
115/230V
0-200W
00-400W
50-600W
1-QOO-735-6200
Transorb
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E78996 rectifier module
Abstract: irfk4h350 IRFK4H351
Text: HE D I 4ÛS5452 OOQTGlc? 4 | IN TERN ATION AL Data Sheet No. PD-9.448B R EC TIFIER T-39-27 INTERNATIONAL RECTIFIER RECOGNIZED I « R HEXPAK POWER MODULE IRFK4H3SO IRFK4H351 File no E78996 Isolated Base Power HEXFET Parallel Assembly 400 Volt, 75 mil HEXPAK
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S5452
E78996
IRFK4H351
E78996 rectifier module
irfk4h350
IRFK4H351
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