ARM926T
Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
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MC9328MX21RM
CH370
ARM926T
ic str 6454
s11 stopping compound
motorola 7824 BT
OSC26M
CNC DRIVES
ptc temperature sensor 400c
4*4 matrix keypad
17521 rca
SAMSUNG NAND FLASH K9F5608
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BSC 68H
Abstract: SCK 055 TSOP 28 SPI memory Package flash AT45DB161 AT45DB161B AT45DB161-CC AT45DB161-RC PA10 PA11 AT45DB161-TC
Text: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB161 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory
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AT45DB161
528-byte
2224B
03/01/xM
BSC 68H
SCK 055
TSOP 28 SPI memory Package flash
AT45DB161
AT45DB161B
AT45DB161-CC
AT45DB161-RC
PA10
PA11
AT45DB161-TC
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K9S2808V0C
Abstract: K9S6408V0C K9S5608V0X
Text: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing
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K9S5608V0C/B
K9S2808V0C/B
K9S6408V0C/B
K9S2808V0C
K9S6408V0C
K9S5608V0X
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flash hamming ecc
Abstract: 29F0408RP radiation solid state recorder
Text: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte
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29F0408RP
528-Byte
00Rev1
flash hamming ecc
29F0408RP
radiation solid state recorder
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TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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SAMSUNG K9F1208U0B
Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
SAMSUNG K9F1208U0B
K9F1208* technical
K9F1208U0B
K9F1208U0B-YCB0
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B-D
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AT45D161
Abstract: AT45DB161B TSOP 28 SPI memory Package flash AT45D161-JC PA10 PA11
Text: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations
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528-byte
1081C
01/01/xM
AT45D161
AT45DB161B
TSOP 28 SPI memory Package flash
AT45D161-JC
PA10
PA11
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Flash MCp nand DRAM 107-ball
Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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KAG00H008M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Flash MCp nand DRAM 107-ball
SAMSUNG MCP
nand sdram mcp
KAG00H008M-FGG2
UtRAM Density
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K9F1208U0C-PCB
Abstract: No abstract text available
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PCB0000
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
K9F1208U0C-PCB
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SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0T00
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
K9F1208U0CJIB0
marking date code samsung semiconductor
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AT45DB161
Abstract: AT45DB161B AT45DCB002 PA10 PA11 PA11-PA0 atmel 504
Text: Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (528 Bytes/Page) Main Memory
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528-byte
AT45DB161
2224D
12/01/xM
AT45DB161
AT45DB161B
AT45DCB002
PA10
PA11
PA11-PA0
atmel 504
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TC58DYG02A5TA00
Abstract: toshiba NAND Technology Code
Text: TC58DYG02A5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT 128M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58DYG02A5 is a 1-Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static
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TC58DYG02A5TA00
TC58DYG02A5
528-byte
TC58DYG02A5TA00
toshiba NAND Technology Code
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AT45DB161-RI
Abstract: AT45DB161 AT45DB161-JC atmel 528 AT45DB161B PA10 PA11 AT45DB161-TC
Text: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations
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528-byte
0807E
01/01//xM
AT45DB161-RI
AT45DB161
AT45DB161-JC
atmel 528
AT45DB161B
PA10
PA11
AT45DB161-TC
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TC58DAM72A1FT00
Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable
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TC58DVM72A1FT00/
TC58DVM72F1FT00
TC58DAM72A1FT00/
TC58DAM72F1FT00
128-MBIT
16BITS)
TC58DxM72x1xxxx
bytes/264
528-byte/264-words
TC58DAM72A1FT00
TC58DVM72A1FT00
TC58DAM72F1FT00
TC58DVM72F1FT00
TC58DAM72A1X
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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512M x 8 Bit NAND Flash Memory
Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
Text: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9K1208U0A-VCB0,
K9K1208U0A-VIB0
K9K1208U0A-Vnever
48-PIN
1217F
50TYP
512M x 8 Bit NAND Flash Memory
K9K1208U0A
K9K1208U0A-VCB0
K9K1208U0A-VIB0
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K9F2808U0B-YCB0
Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001
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K9F2808Q0B-DCB0
K9F2808U0B-VCB0
K9F2808Q0B
K9F2808U0B-YCB0
K9F2808U0B-DCB0
K9F2808U0B
K9F2808Q0B
200us
300us
100ns
K9F2808Q0B-D
K9F2808U0B-Y
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K9F1208B0B
Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.
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K9F1208R0B
K9F1208B0B
K9F1208U0B
K9F1208B0B
K9F1208B0B-G
K9F1208B0B-Y
K9F1208R0B
K9F1208R0B-G
K9F1208U0B
K9F1208U0B-G
K9F1208U0B-V
K9F1208U0B-Y
K9F1208U0BYCB0
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SAMSUNG 256Mb NAND Flash Qualification Reliability
Abstract: K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 hamming code 512 bytes
Text: K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue June 19th 2000 Preliminary - The followings are disprepancy items between K9K5608U0M 256Mb
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K9K1208U0M-YCB0,
K9K1208U0M-YIB0
K9K5608U0M
256Mb
K9K1208U0M
512Mb
SAMSUNG 256Mb NAND Flash Qualification Reliability
K9K1208U0M
K9K1208U0M-YCB0
K9K1208U0M-YIB0
hamming code 512 bytes
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DIN527
Abstract: TC58512 TC58512FT
Text: TC58512FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte
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TC58512FT
512-MBIT
TC58512
528-byte
528-byte
Erase10
DIN527
TC58512FT
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT/DC
64-MBIT
TC58V64FT/DC
016-bit)
528-byte
44/40-P-400-0
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tc58v32ft
Abstract: TC58V32
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FT--
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
C-22A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT/DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E 2PROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT/DC
64-MBIT
TC58V64FT/DC
016-bit)
528-byte
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