rhz 33
Abstract: 48-PIN
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD23C256112A NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM Description The μPD23C256112A is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 2,048 blocks.
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PD23C256112A
256M-BIT
PD23C256112A
48-pin
16Note)
512Note)
rhz 33
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tsop i 12mmx20mm
Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
MacronixCT/28/2005
tsop i 12mmx20mm
MX23J12840
MX23J12840TC-50
MX23J12840TC-50G
MX23J12840TI-50G
xtrarom
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MX23L256
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
MX23L256
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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MX23L12840
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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48-PIN
Abstract: PD23C256112 M14631EJ3V0DS00
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C256112 NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C256112 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 2,048 blocks.
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PD23C256112
256M-BIT
PD23C256112
48-pin
M14631EJ3V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C256112A NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C256112A is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 2,048 blocks.
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PD23C256112A
256M-BIT
PD23C256112A
48-pin
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xtrarom
Abstract: No abstract text available
Text: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J25640
256M-BIT
152Note)
16Note)
512Note)
48-pin
12mmx20mm)
xtrarom
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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Untitled
Abstract: No abstract text available
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
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Untitled
Abstract: No abstract text available
Text: GPR27L512A 512M-Bit NAND Interface Mask ROM NOV. 15, 2007 Version 1.1 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS
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GPR27L512A
512M-Bit
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tsop i 12mmx20mm
Abstract: xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G
Text: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J25640
256M-BIT
152Note)
16Note)
512Note)
48-pin
12mmx20mm)
MacronixCT/28/2005
tsop i 12mmx20mm
xtrarom
MX23J25640TI-50G
load cell amplifier
MX23J25640
MX23J25640TC-50
MX23J25640TC-50G
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48-PIN
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C64112 NAND INTERFACE 64M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C64112 is a 64M bit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 16 pages x 1,024 blocks. The
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PD23C64112
64M-BIT
PD23C64112
48-pin
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C 5271 manual
Abstract: No abstract text available
Text: QED RISCMark RM5271™ 64-Bit Superscalar Microprocessor FEATURES: • Dual Issue su p e rsca la r m icro p ro ce sso r - can issue one integer and one floa ting -point in stru ction pe r cycle — 200, 225, 250, 266 M H z op era ting frequ en cies — 345 D hrystone, 2.1 M IP S m axim um
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RM5271TM
64-Bit
R4600,
R4700
R5000
10OOMBps
64-bitm
DS-5271,
C 5271 manual
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2N1056
Abstract: ASY13 AC142HK 2G271 2N1287A 2SB381 T05 Package transistor t05 2G1024 2G319
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
2N1056
ASY13
AC142HK
2G271
2N1287A
2SB381
T05 Package
transistor t05
2G1024
2G319
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2SB381
Abstract: transistor t05 NKT251 ASY12 T05 Package 2G1024 2G319 2G524 2SB174 2SB219
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. C R O S S - IN D E X & T E C H N IC A L S E C T IO N S A \ Indicators of separate manufacturers producing same type number non-JED EC whose characteristics are not the same. i This manufacturer-identifying symbol
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2SB381
transistor t05
NKT251
ASY12
T05 Package
2G1024
2G319
2G524
2SB174
2SB219
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Untitled
Abstract: No abstract text available
Text: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit HITACHI ADE-203-870A (Z) Preliminary, Rev. 0.1 March 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are
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HN29W8411
074-sector
104-bit)
ADE-203-870A
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D1554
Abstract: D1554 equivalent
Text: ¡p i Comi inear L J Corporation Dual Wideband Video Op Amp l CLC412 APPLICATIONS: FEATURES: • wide bandwidth • HDTV, NTSC & PAL video systems • video switching and distribution • IQ amplifiers • wideband active filters • cable drivers • dc coupled single-to-differential conversions
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CLC412
330MHz
250MHz
30MHz
-76dB
10MHz)
300V/us
CLC412
CLC420
D1554
D1554 equivalent
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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2SA42
Abstract: 2SA248 2SA478 T011A 2G271 2SB226 2sb222 AT128 2G1024 2G524
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
2SA42
2SA248
2SA478
T011A
2G271
2SB226
2sb222
AT128
2G1024
2G524
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Untitled
Abstract: No abstract text available
Text: KM29N32000RS Fl ash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512+16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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KM29N32000RS
250us
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dm-58
Abstract: 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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B170024
4000n
dm-58
2N2238
2N1056
2N3443
2SB381
2SB383 2SB382
T03A
2N1287A
98T2
2SB226
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Untitled
Abstract: No abstract text available
Text: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
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V32000T
250us
KM29V32000T)
003iA
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